25 research outputs found
Nanotransfer Printing of Organic and Carbon Nanotube Thin-Film Transistors on Plastic Substrates
A printing process for high-resolution transfer of all components for organic
electronic devices on plastic substrates has been developed and demonstrated
for pentacene (Pn), poly (3-hexylthiophene) and carbon nanotube (CNT) thin-film
transistors (TFTs). The nanotransfer printing process allows fabrication of an
entire device without exposing any component to incompatible processes and with
reduced need for special chemical preparation of transfer or device substrates.
Devices on plastic substrates include a Pn TFT with a saturation, field-effect
mobility of 0.09 cm^2 (Vs)^-1 and on/off ratio approximately 10^4 and a CNT TFT
which exhibits ambipolar behavior and no hysteresis.Comment: to appear in Applied Physics Letter
МАТЕМАТИЧЕСКОЕ МОДЕЛИРОВАНИЕ ПРОЦЕССА ЭКСТРУЗИИ ТЕРМОЭЛЕКТРИЧЕСКОГО МАТЕРИАЛА
We derive a mathematical model for the composite material extrusion process which describes the main features of the resulting material stress−strain state. The extrusion process includes extrusion of a cylindrical billet of pressed powder through a die of desired geometry. Die geometrical parameters and process speed can be preset. The computational model is based on combined elastic−plastic body approximation. The numericaltechnique uses a finite element approximation on Lagrangian grid, which changes over time with changes in sample shape. To perform it we use adaptive grid units generation in areas of sample high stress and strain. The calculations were performed in Crystmo/Marc software package. We study the basic featuresof stress−strain state of the material obtained at different stages of extrusion process.Для процесса экструзии композиционного материала предложена математическаямодель и на ее основе рассмотрены основные особенности напряженно−деформированногосостояния получаемого стержня. Заданы геометрические параметры фильеры и скорость перемещения Пуансона. Расчетная модель основана на совместном использовании приближенийупругопластического тела. Численная методика использует конечно−элементную аппроксимацию на лагранжевой сетке, которая меняется во времени с изменением формы образца. Для этого применена адаптивная генерация сеточных узлов в зонах больших напряжений и деформаций образца. Расчеты проведены с использованием комплекса программ Crystmo/Marc. На примере термоэлектрического композита на основе Bi2Te3 изучены основные особенности напряженно−деформированного состояния материала, полученного на разных стадиях процесса экструзии
Theoretical calculations of voltage-dependent STM images of acetylene on the Si(001) surface
Voltage-dependent scanning tunneling microscope (STM) images have been calculated using density functional theory (DFT) with the general gradient approximation (GGA) for five chemisorbed forms of acetylene on the Si(001) surface. The effect of electric field between the tip and sample is addressed by a high-voltage extension of the Tersoff-Hamann approach. The calculated images are used to aid in assigning the species observed in recent STM measurements on the Si(001)/acetylene system. An image which had been previously attributed to a tetracoordinated acetylene molecule is reassigned to a site with two acetylene molecules, bridging two adjacent SiSi surface dimers