Direct Measurement of Quantum Confinement Effects at Metal to Quantum-Well Nanocontacts

Model metal-semiconductor nanostructure Schottky nanocontacts were made on cleaved heterostructures containing GaAs quantum wells (QWs) of varying width and were locally probed by ballistic electron emission microscopy. The local Schottky barrier was found to increase by ∼0.140 eV as the QW width was systematically decreased from 15 to 1 nm, due mostly to a large (∼0.200 eV) quantum-confinement increase to the QW conduction band. The measured barrier increase over the full 1 to 15 nm QW range was quantitatively explained when local "interface pinning" and image force lowering effects are also considered

Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures

The current-voltage characteristics of Au=low doped n-GaAs Schottky diodes were determined at various temperatures in the range of 77-300 K. The estimated zero-bias barrier height and the ideality factor assuming thermionic emission (TE) show a temperature dependence of these parameters. While the ideality factor was found to show the T0 effect, the zero-bias barrier height was found to exhibit two different trends in the temperature ranges of 77-160 K and 160-300 K. The variation in the flat-band barrier height with temperature was found to be -(4.7±0.2)× 104 eVK-1, approximately equal to that of the energy band gap. The value of the Richardson constant, A∗∗, was found to be 0.27 Acm-2K-2 after considering the temperature dependence of the barrier height. The estimated value of this constant suggested the possibility of an interfacial oxide between the metal and the semiconductor. Investigations suggested the possibility of a thermionic field-emission-dominated current transport with a higher characteristic energy than that predicted by the theory. The observed variation in the zero-bias barrier height and the ideality factor could be explained in terms of barrier height inhomogenities in the Schottky diode

Heterogeneously grown tunable group-IV laser on silicon

Tunable tensile-strained germanium (epsilon-Ge) thin films on GaAs and heterogeneously integrated on silicon (Si) have been demonstrated using graded III-V buffer architectures grown by molecular beam epitaxy (MBE). epsilon-Ge epilayers with tunable strain from 0% to 1.95% on GaAs and 0% to 1.11% on Si were realized utilizing MBE. The detailed structural, morphological, band alignment and optical properties of these highly tensile-strained Ge materials were characterized to establish a pathway for wavelength-tunable laser emission from 1.55 μm to 2.1 μm. High-resolution X-ray analysis confirmed pseudomorphic epsilon-Ge epitaxy in which the amount of strain varied linearly as a function of indium alloy composition in the InxGa1-xAs buffer. Cross-sectional transmission electron microscopic analysis demonstrated a sharp heterointerface between the epsilon-Ge and the InxGa1-xAs layer and confirmed the strain state of the epsilon-Ge epilayer. Lowtemperature micro-photoluminescence measurements confirmed both direct and indirect bandgap radiative recombination between the Γ and L valleys of Ge to the light-hole valence band, with L-lh bandgaps of 0.68 eV and 0.65 eV demonstrated for the 0.82% and 1.11% epsilon-Ge on Si, respectively. The highly epsilon-Ge exhibited a direct bandgap, and wavelength-tunable emission was observed for all samples on both GaAs and Si. Successful heterogeneous integration of tunable epsilon-Ge quantum wells on Si paves the way for the implementation of monolithic heterogeneous devices on Si

Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

Germanium is an indirect semiconductor which attracts particular interest as an electronics and photonics material due to low indirect-to-direct band separation. In this work we bend the bands of Ge by means of biaxial tensile strain in order to achieve a direct band gap. Strain is applied by growth of Ge on a lattice mismatched InGaAs buffer layer with variable In content. Band structure is studied by photoluminescence and photoreflectance, giving the indirect and direct bands of the material. Obtained experimental energy band values are compared with a k p simulation. Photoreflectance spectra are also simulated and compared with the experiment. The obtained results indicate direct band structure obtained for a Ge sample with 1.94 % strain applied, with preferable Γ valley to heavy hole transition

Properties of Pt Schottky Type Contacts On High-Resistivity CdZnTe Detectors

In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Brigman process. We have analyzed the experimental I-V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact in series with the bulk resistance. Least square fits to the experimental data yield 0.78-0.79 eV for the Pt-CZT Schottky barrier height, and <20 V for the voltage required to deplete a 2 mm thick CZT detector. We demonstrate that at high bias the thermionic current over the Schottky barrier, the height of which is reduced due to an interfacial layer between the contact and CZT material, controls the leakage current of the detectors. In many cases the dark current is not determined by the resistivity of the bulk material, but rather the properties of the contacts; namely by the interfacial layer between the contact and CZT material.Comment: 12 pages, 11 figure

Study of Optical and Structural Characteristics of Ceria Nanoparticles Doped with Negative and Positive Association Lanthanide Elements

This paper studies the effect of adding lanthanides with negative association energy, such as holmium and erbium, to ceria nanoparticles doped with positive association energy lanthanides, such as neodymium and samarium. That is what we called mixed doped ceria nanoparticles (MDC NPs). In MDC NPs of grain size range around 6 nm, it is proved qualitatively that the conversion rate from Ce 4+ to Ce 3+ is reduced, compared to ceria doped only with positive association energy lanthanides. There are many pieces of evidence which confirm the obtained conclusion. These indications are an increase in the allowed direct band gap which is calculated from the absorbance dispersion measurements, a decrease in the emitted fluorescence intensity, and an increase in the size of nanoparticles, which is measured using both techniques: transmission electron microscope (TEM) and X-ray diffractometer (XRD). That gives a novel conclusion that there are some trivalent dopants, such as holmium and erbium, which can suppress Ce 3+ ionization states in ceria and consequently act as scavengers for active O-vacancies in MDC. This promising concept can develop applications which depend on the defects in ceria such as biomedicine, electronic devices, and gas sensors

High-quality InAsyP1−y step-graded buffer by molecular-beam epitaxy

Relaxed, high-quality, compositionally step-graded InAsyP1-y layers with an As composition of y=0.4, corresponding to a lattice mismatch of similar to1.3% were grown on InP substrates using solid-source molecular-beam epitaxy. Each layer was found to be nearly fully relaxed observed by triple axis x-ray diffraction, and plan-view transmission electron microscopy revealed an average threading dislocations of 4x10(6) cm(-2) within the InAs0.4P0.6 cap layer. Extremely ordered crosshatch morphology was observed with very low surface roughness (3.16 nm) compared to cation-based In0.7Al0.3As/InxAl1-xAs/InP graded buffers (10.53 nm) with similar mismatch and span of lattice constants on InP. The results show that InAsyP1-y graded buffers on InP are promising candidates as virtual substrates for infrared and high-speed metamorphic III-V devices. (C) 2003 American Institute of Physics

Multivalley electron conduction at the indirect-direct crossover point in highly tensile-strained germanium

As forward-looking electron devices increasingly adopt high-mobility low-band-gap materials, such as germanium (Ge), questions remain regarding the feasibility of strain engineering in low-band-gap systems. Particularly, the Ge L-Γ valley separation (∼150 meV) can be overcome by introducing a high degree of tensile strain (ε ≥ 1.5%). It is therefore essential to understand the nature of highly strained Ge transport, wherein multivalley electron conduction becomes a possibility. Here, we report on the competitiveness between L- and Γ-valley transport in highly tensile-strained (ε ∼ 1.6%) Ge/In0.24Ga0.76 Asheterostructures. Temperature-dependent magnetotransport analysis reveals two contributing carrier populations, identified as lower- and higher-mobility L- and Γ-valley electrons (in Ge), using temperature-dependent Boltzmann transport modeling. Coupling this interpretation with electron-cyclotron-resonance studies, the effective mass (m*) of the higher-mobility Γ-valley electrons is probed, revealing m* = (0.049 ± 0.007)me. Moreover, a comparison of empirical and theoretical m* indicates that these electrons reside primarily in the first-two quantum sublevels of the Ge Γ valley. Consequently, our results provide an insight into the strain-dependent carrier dynamics of Ge, offering alternative pathways toward efficacious strain engineering

Interface states density distribution in Au/n-GaAs schottky diodes on n-Ge and n-GaAs substrates

The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-GaAs Schottky diodes on n-Ge substrates are investigated and compared with characteristics of diodes on GaAs substrates. The diodes show the non-ideal behavior of I-V characteristics with an ideality factor of 1.13 and barrier height of 0.735 eV. The forward bias saturation current was found to be large (3&#215;10-10 A vs. 4.32&#215;10-12A) in the GaAs/Ge Schottky diodes compared with the GaAs/GaAs diodes. The energy distribution of interface states was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height, though it is small. The interface states density was found to be large in the Au/n-GaAs/n-Ge structure compared with the Au/n-GaAs/n+-GaAs structure. The possible explanation for the increase in the interface states density in the former structure was highlighted