Correlated electron-hole plasma in organometal perovskites

Organic-inorganic perovskites are a class of solution-processed semiconductors holding promise for the realization of low-cost efficient solar cells and on-chip lasers. Despite the recent attention they have attracted, fundamental aspects of the photophysics underlying device operation still remain elusive. Here we use photoluminescence and transmission spectroscopy to show that photoexcitations give rise to a conducting plasma of unbound but Coulomb-correlated electron-hole pairs at all excitations of interest for light-energy conversion and stimulated optical amplification. The conductive nature of the photoexcited plasma has crucial consequences for perovskite-based devices: in solar cells, it ensures efficient charge separation and ambipolar transport while, concerning lasing, it provides a low threshold for light amplification and justifies a favourable outlook for the demonstration of an electrically driven laser. We find a significant trap density, whose cross-section for carrier capture is however low, yielding a minor impact on device performance

Magnetic properties of pseudomorphic epitaxial films of Pr_{0.7}Ca_{0.3}MnO_3 under different biaxial tensile stresses

In order to analyse the effect of strain on the magnetic properties of narrow-band manganites, the temperature and field dependent susceptibilities of about 8.5 nm thick epitaxial Pr0.7Ca0.3MnO3 films, respectively grown on (001) and (110) SrTiO3 substrates, have been compared. For ultrathin samples grown on (001) SrTiO3, a bulk-like cluster-glass magnetic behaviour is found, indicative of the possible coexistence of antiferromagnetic and ferromagnetic phases. On the contrary, ultrathin films grown on (110) substrates show a robust ferromagnetism, with a strong spontaneous magnetization of about 3.4 mB /Mn atom along the easy axis. On the base of high resolution reciprocal space mapping analyses performed by x-ray diffraction, the different behaviours are discussed in terms of the crystallographic constraints imposed by the epitaxy of Pr0.7Ca0.3MnO3 on SrTiO3. We suggest that for growth on (110) SrTiO3, the tensile strain on the film c-axis, lying within the substrate plane, favours the ferromagnetic phase, possibly by allowing a mixed occupancy and hybridization of both in-plane and out-of-plane eg orbitals. Our data allow to shed some physics of inhomogeneous states in manganites and on the nature of their ferromagnetic insulating state.Comment: 9 pages, 9 figure

Application of photoreflectance to advanced multilayer structures for photovoltaics

Photoreflectance (PR) is a convenient characterization tool able to reveal optoelectronic properties of semiconductor materials and structures. It is a simple non-destructive and contactless technique which can be used in air at room temperature. We will present experimental results of the characterization carried out by means of PR on different types of advanced photovoltaic (PV) structures, including quantum-dot-based prototypes of intermediate band solar cells, quantum-well structures, highly mismatched alloys, and III?V-based multi-junction devices, thereby demonstrating the suitability of PR as a powerful diagnostic tool. Examples will be given to illustrate the value of this spectroscopic technique for PV including (i) the analysis of the PR spectra in search of critical points associated to absorption onsets; (ii) distinguishing signatures related to quantum confinement from those originating from delocalized band states; (iii) determining the intensity of the electric field related to built-in potentials at interfaces according to the Franz?Keldysh (FK) theory; and (v) determining the nature of different oscillatory PR signals among those ascribed to FK-oscillations, interferometric and photorefractive effects. The aim is to attract the interest of researchers in the field of PV to modulation spectroscopies, as they can be helpful in the analysis of their devices

Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure

We have studied the electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure, i.e., with an In0.15Ga0.85As quantum well (QW) as capping layer above InAs quantum dots (QDs), via temperature-dependent photoluminescence, photo-modulated reflectance, and rapid thermal annealing (RTA) treatments. It is shown that the carrier transfer via wetting layer (WL) is impeded according to the results of temperature dependent peak energy and line width variation of both the ground states (GS) and excited states (ES) of QDs. The quenching of integrated intensity is ascribed to the thermal escape of electron from the dots to the complex In0.15Ga0.85As QW + InAs WL structure. Additionally, as the RTA temperature increases, the peak of PL blue shifts and the full width at half maximum shrinks. Especially, the intensity ratio of GS to ES reaches the maximum when the energy difference approaches the energy of one or two LO phonon(s) of InAs bulk material, which could be explained by phonon-enhanced inter-sublevels carrier relaxation in such asymmetric dot-in-well structure

Photoreflectance line shape in quantum-confined semiconductor systems: the case of dilute nitrides

Photoreflectance technique has been extensively applied for studying the optical properties of quantum-confined semiconductor systems and for a long time the excitonic character of the intersubband transitions has been commonly accepted. The case of dilute nitrides deserves particular interest because of the unusual asymmetric aspect of their line shape, sometimes reported in the literature for quantum well related transitions. The origin of the asymmetric line shape is clarified, meanwhile showing how it can be used to acquire fine informations on the exciton binding energy and to investigate the N-induced variation of the electron eective mass in this class of semiconductor compounds