BaFe_{1.8}Co_{0.2}As_2 thin film hybrid Josephson junctions

Josephson junctions with iron pnictides open the way for fundamental experiments on superconductivity in these materials and their application in superconducting devices. Here, we present hybrid Josephson junctions with a BaFe_{1.8}Co_{0.2}As_2 thin film electrode, an Au barrier and a PbIn counter electrode. The junctions show RSJ-like current-voltage characteristics up to the critical temperature of the counter electrode of about 7.2K. The temperature dependence of the critical current, IC, does not show an Ambegaokar-Baratoff behavior. Well-pronounced Shapiro steps are observed at microwave frequencies of 10-18GHz. Assuming an excess current, I_ex, of 200 {\mu}A at 4.2K we get an effective I_C R_N product of 6 {\mu}V.Comment: submitted to Appl. Phys. Let

Influence of the spreading resistance on the conductance spectrum of planar hybrid thin film SNS' junctions based on iron pnictides

To investigate the superconducting properties of iron pnictides we prepared planar hybrid SNS' junctions in thin film technology with a pnictide base electrode, a gold barrier layer and a lead counter electrode. Our design allows characterization of the electrodes and the junction independently in a 4-probe method. We show how both electrodes influence the measured spectra due to their spreading resistance. While the Pb electrode has a constant resistance above its $T_c$, the contribution of the pnictide electrode is clearly current-dependent and thus it needs a more advanced method to be corrected. We present an empirical method, which is simple to apply and allows to deal with the spreading resistance in our junctions to recalculate the actual conductance and voltage of one junction at given temperature

Surface versus bulk characterization of the electronic inhomogeneity in a VO_{2} film

We investigated the inhomogeneous electronic properties at the surface and interior of VO_{2} thin films that exhibit a strong first-order metal-insulator transition (MIT). Using the crystal structural change that accompanies a VO_{2} MIT, we used bulk-sensitive X-ray diffraction (XRD) measurements to estimate the fraction of metallic volume p^{XRD} in our VO_{2} film. The temperature dependence of the p$^{XRD}$ was very closely correlated with the dc conductivity near the MIT temperature, and fit the percolation theory predictions quite well: $\sigma$ $\sim$ (p - p_{c})^{t} with t = 2.0$\pm$0.1 and p_{c} = 0.16$\pm$0.01. This agreement demonstrates that in our VO$_{2}$ thin film, the MIT should occur during the percolation process. We also used surface-sensitive scanning tunneling spectroscopy (STS) to investigate the microscopic evolution of the MIT near the surface. Similar to the XRD results, STS maps revealed a systematic decrease in the metallic phase as temperature decreased. However, this rate of change was much slower than the rate observed with XRD, indicating that the electronic inhomogeneity near the surface differs greatly from that inside the film. We investigated several possible origins of this discrepancy, and postulated that the variety in the strain states near the surface plays an important role in the broad MIT observed using STS. We also explored the possible involvement of such strain effects in other correlated electron oxide systems with strong electron-lattice interactions.Comment: 27 pages and 7 figure

Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs

Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus spin-flip mechanism. Due to the reduced hole density in the band bending region at the (100) surface the spin-relaxation time increases over two orders of magnitude towards lower energies. At the flat-band (011) surface a constant spin relaxation time in agreement with our measurements and calculations for bulk GaAs is obtained.Comment: 6 pages, 4 figure

Symmetric Versus Nonsymmetric Structure of the Phosphorus Vacancy on InP(110)

The atomic and electronic structure of positively charged P vacancies on InP(110) surfaces is determined by combining scanning tunneling microscopy, photoelectron spectroscopy, and density-functional theory calculations. The vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge transfer level 0.75+-0.1 eV above the valence band maximum. The scanning tunneling microscopy (STM) images show only a time average of two degenerate geometries, due to a thermal flip motion between the mirror configurations. This leads to an apparently symmetric STM image, although the ground state atomic structure is nonsymmetric.Comment: 5 pages including 3 figures. related publications can be found at http://www.fhi-berlin.mpg.de/th/paper.htm

The novel benzimidazole derivative BRP-7 inhibits leukotriene biosynthesis in vitro and in vivo by targeting 5-lipoxygenase-activating protein (FLAP).

BACKGROUND AND PURPOSE: Leukotrienes (LTs) are inflammatory mediators produced via the 5-lipoxygenase (5-LOX) pathway and are linked to diverse disorders, including asthma, allergic rhinitis and cardiovascular diseases. We recently identified the benzimidazole derivative BRP-7 as chemotype for anti-LT agents by virtual screening targeting 5-LOX-activating protein (FLAP). Here, we aimed to reveal the in vitro and in vivo pharmacology of BRP-7 as an inhibitor of LT biosynthesis. EXPERIMENTAL APPROACH: We analysed LT formation and performed mechanistic studies in human neutrophils and monocytes, in human whole blood (HWB) and in cell-free assays. The effectiveness of BRP-7 in vivo was evaluated in rat carrageenan-induced pleurisy and mouse zymosan-induced peritonitis. KEY RESULTS: BRP-7 potently suppressed LT formation in neutrophils and monocytes and this was accompanied by impaired 5-LOX co-localization with FLAP. Neither the cellular viability nor the activity of 5-LOX in cell-free assays was affected by BRP-7, indicating that a functional FLAP is needed for BRP-7 to inhibit LTs, and FLAP bound to BRP-7 linked to a solid matrix. Compared with the FLAP inhibitor MK-886, BRP-7 did not significantly inhibit COX-1 or microsomal prostaglandin E2 synthase-1, implying the selectivity of BRP-7 for FLAP. Finally, BRP-7 was effective in HWB and impaired inflammation in vivo, in rat pleurisy and mouse peritonitis, along with reducing LT levels. CONCLUSIONS AND IMPLICATIONS: BRP-7 potently suppresses LT biosynthesis by interacting with FLAP and exhibits anti-inflammatory effectiveness in vivo, with promising potential for further development

Point defects on the (110) surfaces of InP, InAs and InSb: a comparison with bulk

The basic properties of point defects, such as local geometries, positions of charge-transfer levels, and formation energies, have been calculated using density-functional theory, both in the bulk and on the 110 surface of InP, InAs, and InSb. Based on these results we discuss the electronic properties of bulk and surface defects, defect segregation, and compensation. In comparing the relative stability of the surface and bulk defects, it is found that the native defects generally have higher formation energies in the bulk. From this it can be concluded that at equilibrium there is a considerably larger fraction of defects at the surface and under nonequilibrium conditions defects are expected to segregate to the surface, given sufficient time. In most cases the charge state of a defect changes upon segregation, altering the charge-carrier concentrations. The photo-thresholds are also calculated for the three semiconductors and are found to be in good agreement with experimental data

A System Dynamics Approach for Modeling Return on Quality for ECS Industry

The Electronic Components and Systems industry (ECS) is characterized by long lead times and high market volatility. Besides fast technological development within this industry, cyclic market up- and downturns are influencing the semiconductor market. Therefore, adequate capacity and inventory management as well as continuous process improvements are important success factors for semiconductor companies to be competitive. In this study, the authors focus on a manufacturing excellence approach to increase front-end supply reliability and the availability of inventory within the customer order decoupling point. Here, development and manufacturing processes must be designed in a way that highest levels of product quality, flexibility, time and costs are reached. The purpose of this study is to explore the impact of return on quality in manufacturing systems. Therefore, multimethod simulation modelling including discrete-event and system dynamics simulation is applied