Multi-Chip Integration by Photonic Wire Bonding: Connecting Surface and Edge Emitting Lasers to Silicon Chips

We demonstrate coupling of surface and edge emitting InP lasers to silicon photonic chips using photonic wire bonding. We confirm that back-reflections from the silicon chip do not deteriorate the linewidth of the lasers

Abstracts from the 8th International Conference on cGMP Generators, Effectors and Therapeutic Implications

This work was supported by a restricted research grant of Bayer AG

Unternehmensstrategische Auswertung der Delphi-Berichte

Die verschiedenen Ansätze des Technologie-Roadmapping, wie sie in den folgenden Teilen dieses Buches vorgestellt werden, greifen i.d.R. auf die Kompetenz zurück, die innerhalb eines Unternehmens oder auch eines Unternehmensverbundes zur Beurteilung der mittelfristigen technologischen Entwicklung vorhanden ist. Ohne Zweifel wäre es nützlich, diese durch Historie und unternehmerische schwerpunktsetzungen vorgeprägten Einschätzungen mit externen Expertenmeinungen abgleichen zu können. Diese Möglichkeit eröffnen die Delphi-Berichte der Bundesregierung. Darin werden ein umfassendes Themenspektrum aus Wissenschaft, Forschung und Anwendung aufgegriffen und Prognosen über das Eintreffen wichtiger Durchbrüche erstellt. Zur unternehmensstrategischen Auswertung der Delphi-Berichte bedarf es einer geeigneten Vorgehensweise, welche zu einem Kernbestandteil eines professionellen Technologiemanagement werden sollte

Method for fabricating an electro-absorption modulated laser and electro-absorption modulated laser

The invention relates to a method for fabricating an electroabsorption modulated laser (1), comprising generating a single mode laser section (11) and an electroabsorption modulator section (12), comprising fabricating at least one n-doped layer (111) of the laser section (11) and at least one n-doped layer (121) of the modulator section (12); generating an isolating section (13) for electrically isolating at least the n-doped layer (111) of the laser section (11) and the n-doped layer (112) of the modulator section (12) from one another. According to the invention, generating the isolating section (13) comprises epitaxially growing at least one isolating layer (131, 132) and structuring the isolating layer (131, 132) before the generation of the n-doped layer (111) of the laser section (11) and the n-doped layer (121) of the modulator section (12). The invention also relates to an electroabsorption modulated laser

InP-Components for 100 GBaud Optical Data Center Communication

Externally modulated DFB lasers (EML) and vertically illuminated photodetectors are presented. Because of their excellent high-speed behavior and operation wavelength of 1310 nm, the devices are of interest for intra-data center communication. Since the EML and the photodetector chips are compatible with current systems, these devices are candidates for upgrading existing transceivers to higher baud rates. Therefore, a proof of concept for 100 GBaud data transmission with the presented components is demonstrated. Even without predistortion, the experiments show clearly open eye diagrams

InP-Components for 100 GBaud Optical Data Center Communication

Externally modulated DFB lasers (EML) and vertically illuminated photodetectors are presented. Because of their excellent high-speed behavior and operation wavelength of 1310 nm, the devices are of interest for intra-data center communication. Since the EML and the photodetector chips are compatible with current systems, these devices are candidates for upgrading existing transceivers to higher baud rates. Therefore, a proof of concept for 100 GBaud data transmission with the presented components is demonstrated. Even without predistortion, the experiments show clearly open eye diagrams