Phonon sidebands of color centers in hexagonal boron nitride

Low temperature photoluminescence spectra of a color center in hexagonal boron nitride are analyzed. The acoustic phonon sideband can be described by a deformation coupling proportional to strain to a phonon bath that is effectively two dimensional. The optical phonon band is described by Frohlich coupling to the LO-branches, and a deformation coupling proportional to lattice displacement for the TO-branch. The resonances expressed in the optical band vary from defect to defect, in some emitters, coupling to out-of-plane polarized phonons is reported.Comment: 7 pages, 4 fig

Fast preparation of single hole spin in InAs/GaAs quantum dot in Voigt geometry magnetic field

The preparation of a coherent heavy-hole spin via ionization of a spin-polarized electron-hole pair in an InAs/GaAs quantum dot in a Voigt geometry magnetic field is investigated. For a dot with a 17 ueV bright-exciton fine-structure splitting, the fidelity of the spin preparation is limited to 0.75, with optimum preparation occurring when the effective fine-structure of the bright-exciton matches the in-plane hole Zeeman energy. In principle, higher fidelities can be achieved by minimizing the bright-exciton fine-structure splitting.Comment: 8 pages, 10 figs, published PRB 85 155310 (2012

Charge control in InP/GaInP single quantum dots embedded in Schottky diodes

We demonstrate control by applied electric field of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization leading to suppression of formation of large dots uncontrollably accumulating charge. Using bias- and polarization-dependent micro-photoluminescence, we identify the exciton multi-particle states and carry out a systematic study of the neutral exciton state dipole moment and polarizability. This analysis allows for the characterization of the exciton wavefunction properties at the single dot level for this type of quantum dots. Photocurrent measurements allow further characterization of exciton properties by electrical means, opening new possibilities for resonant excitation studies for such system.Comment: 7 pages, 4 figure

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP capping in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench

Spin-photon interface and spin-controlled photon switching in a nanobeam waveguide

Access to the electron spin is at the heart of many protocols for integrated and distributed quantum-information processing [1-4]. For instance, interfacing the spin-state of an electron and a photon can be utilized to perform quantum gates between photons [2,5] or to entangle remote spin states [6-9]. Ultimately, a quantum network of entangled spins constitutes a new paradigm in quantum optics [1]. Towards this goal, an integrated spin-photon interface would be a major leap forward. Here we demonstrate an efficient and optically programmable interface between the spin of an electron in a quantum dot and photons in a nanophotonic waveguide. The spin can be deterministically prepared with a fidelity of 96\%. Subsequently the system is used to implement a "single-spin photonic switch", where the spin state of the electron directs the flow of photons through the waveguide. The spin-photon interface may enable on-chip photon-photon gates [2], single-photon transistors [10], and efficient photonic cluster state generation [11]

Chirality of nanophotonic waveguide with embedded quantum emitter for unidirectional spin transfer

Scalable quantum technologies may be achieved by faithful conversion between matter qubits and photonic qubits in integrated circuit geometries. Within this context, quantum dots possess well-defined spin states (matter qubits), which couple efficiently to photons. By embedding them in nanophotonic waveguides, they provide a promising platform for quantum technology implementations. In this paper, we demonstrate that the naturally occurring electromagnetic field chirality that arises in nanobeam waveguides leads to unidirectional photon emission from quantum dot spin states, with resultant in-plane transfer of matter-qubit information. The chiral behaviour occurs despite the non-chiral geometry and material of the waveguides. Using dot registration techniques, we achieve a quantum emitter deterministically positioned at a chiral point and realize spin-path conversion by design. We further show that the chiral phenomena are much more tolerant to dot position than in standard photonic crystal waveguides, exhibit spin-path readout up to 95±5% and have potential to serve as the basis of spin-logic and network implementations

Characterisation of tungsten nano-wires prepared by electron and ion beam induced chemical vapour deposition

In this study we present a morphological characterisation of tungsten nano-wires prepared by electron and ion beam induced chemical vapour deposition. Our observations show that both electron and ion beam as-deposited nano-wires exhibit an amorphous like microstructure. Irradiation of the electron beam deposited wires with 200kV incident electrons in the TEM was found to cause an electron beam induced anneal resulting in the formation of a localised nano-crystalline structure. Wires deposited using 30kV Ga+ ions were found to exhibit the appearance of low temperature superconducting properties with a critical transition temperature Tc of ~5K

Prospective for graphene based thermal mid-infrared light emitting devices

We have investigated the spatial and spectral characteristics of mid-infrared thermal emission from large area Chemical Vapor Deposition (CVD) graphene, transferred onto SiO2/Si, and show that the emission is broadly that of a grey-body emitter, with emissivity values of approximately 2% and 6% for mono- and multilayer graphene. For the currents used, which could be sustained for over one hundred hours, the emission peaked at a wavelength of around 4 μm and covered the characteristic absorption of many important gases. A measurable modulation of thermal emission was obtained even when the drive current was modulated at frequencies up to 100 kHz

Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour deposition

In this study we have fabricated tungsten containing nano-wires using focused electron and ion beams from a tungsten hexacarbonyl precursor. The temperature dependent conductive properties of the wires have been investigated. Although a superconducting transition (at ∼ 5.5 K) has been observed in ion beam deposited wires, electron beam deposited wires display non-metallic conduction properties consistent with a variable range hopping conduction mechanism. Micro-structural and compositional analysis has been performed using transmission electron microscopy and associated techniques. The observed disorder of the as-deposited wires, together with the higher oxygen and lower metal content of the electron beam deposited wires was found to correlate well with the low temperature electrical properties. In addition, the electron beam deposited wires were shown to be particularly susceptible to irradiation damage when illuminated using 200 kV electrons in the transmission electron microscope. With electron doses in the region of ∼ 50 A/cm2 the as-deposited disordered structure was refined locally to give regions of randomly orientated nano-crystallites