Phonon sidebands of color centers in hexagonal boron nitride

Low temperature photoluminescence spectra of a color center in hexagonal boron nitride are analyzed. The acoustic phonon sideband can be described by a deformation coupling proportional to strain to a phonon bath that is effectively two dimensional. The optical phonon band is described by Frohlich coupling to the LO-branches, and a deformation coupling proportional to lattice displacement for the TO-branch. The resonances expressed in the optical band vary from defect to defect, in some emitters, coupling to out-of-plane polarized phonons is reported.Comment: 7 pages, 4 fig

Gate Tunable Graphene-integrated Metasurface Modulator for Mid-Infrared Beam Steering (article)

This is the final version. Available on open access from Optical Society of America via the DOI in this recordThe data associated with this article is available in ORE at: https://doi.org/10.24378/exe.1304The ability to integrate graphene into metasurface devices has attracted enormous interest as a means of achieving dynamic electrical control of their electromagnetic response. In this manuscript, we experimentally demonstrate a graphene-integrated metasurface modulator that establishes the potential to actively control the amplitude and phase of mid-infrared light with high modulation depth and speed, in good agreement with simulation results. Our simulations also show it is possible to construct a reconfigurable surface with tunable phase profile by incorporating graphene-integrated metasurface modulators with specific geometric parameters. This reconfigurable surface is able to manipulate the orientation of the wave reflected from it, achieving a high-speed, switchable beam steering reflective interface. The results here could inspire research on dynamic reflective display and holograms.Engineering and Physical Sciences Research Council (EPSRC

Metamaterial-based graphene thermal emitter

This is the final version of the article. Available from Tsinghua University Press / Springer Verlag via the DOI in this record.The publisher's erratum to this article is in ORE: http://hdl.handle.net/10871/34353A thermal emitter composed of a frequency-selective surface metamaterial layer and a hexagonal boron nitride-encapsulated graphene filament is demonstrated. The broadband thermal emission of the metamaterial (consisting of ring resonators) was tailored into two discrete bands, and the measured reflection and emission spectra agreed well with the simulation results. The high modulation frequencies that can be obtained in these devices, coupled with their operation in air, confirm their feasibility for use in applications such as gas sensing.C.S., I.J.L. and G.R.N. acknowledge financial support from the Engineering and Physical Sciences Research Council (EPSRC) of the United Kingdom via the Centre for Doctoral Training in Electromagnetic Metamaterials (No. EP/L015331/1). G.R.N. also acknowledges the support of EPSRC via a Fellowship in Frontier Manufacturing (No. EP/J018651/1)

Visible light emitting waveguide on Si chip

This is the author accepted manuscript. The final version is available from SPIE via the DOI in this record.Photonic lab-on-a-chip portable platforms have proved to be very sensitive, rapid in analysis and easy-to-use. However, they still rely on a bulk light source to operate, thus hindering the actual portability and potential for commercial realization. In the present paper we have proposed a design for a light emitting structure that could be easily implemented on chip. The design consists of a Si3N4 strip waveguide on SiO2 substrate, with an active material that emits light as top and lateral cladding. The cross-section of the waveguide was optimised to support both excitation and emission as guided modes, with a high mutual overlap and high confinement to the cladding. This ensures an efficient light emission activation from the cladding and a stable propagation along the waveguide. The proposed structure shows to be operative along the visible range; demonstrated from 400nm to 633nm. The procedure we have followed along this report can be virtually used for designing the cross-section geometry of any strip waveguide system so that the performance is optimised for a given cladding refractive index and emission and excitation wavelengths. In addition we have proposed the use of polymeric quantum dots as the gain material to be used as active cladding. The ease of on-chip integration of this gain material via spin-coating, together with the simplicity of our light emitting waveguide, makes our light source design suitable for large-scale integration on Si chip. Specially, for lab-on-chip applications where multiplexed operation is essential.This research was possible thanks to the Engineering and Physical Sciences Research Council (EPSRC) Centre for Doctoral Training in Electromagnetic Metamateriales at University of Exeter (Grant No. EP/L015331/1) and also via the EPSRC Grant EP/N035569/1

Inverse design of whispering-gallery nanolasers with tailored beam shape and polarization

This is the final version. Available from the American Chemical Society via the DOI in this record. Control over the shape and polarization of the beam emitted by a laser source is important in applications such as optical communications, optical manipulation and high-resolution optical imaging. In this paper, we present the inverse design of monolithic whispering-gallery nanolasers which emit along their axial direction with a tailored laser beam shape and polarization. We design and experimentally verify three types of submicron cavities, each one emitting into a different laser radiation mode: an azimuthally polarized doughnut beam, a radially polarized doughnut beam and a linearly polarized Gaussian-like beam. The measured output laser beams yield a field overlap with respect to the target mode of 92%, 96%, and 85% for the azimuthal, radial, and linearly polarized cases, respectively, thereby demonstrating the generality of the method in the design of ultracompact lasers with tailored beams.Engineering and Physical Sciences Research Council (EPSRC)Engineering and Physical Sciences Research Counci

Fast preparation of single hole spin in InAs/GaAs quantum dot in Voigt geometry magnetic field

The preparation of a coherent heavy-hole spin via ionization of a spin-polarized electron-hole pair in an InAs/GaAs quantum dot in a Voigt geometry magnetic field is investigated. For a dot with a 17 ueV bright-exciton fine-structure splitting, the fidelity of the spin preparation is limited to 0.75, with optimum preparation occurring when the effective fine-structure of the bright-exciton matches the in-plane hole Zeeman energy. In principle, higher fidelities can be achieved by minimizing the bright-exciton fine-structure splitting.Comment: 8 pages, 10 figs, published PRB 85 155310 (2012

Charge control in InP/GaInP single quantum dots embedded in Schottky diodes

We demonstrate control by applied electric field of the charge states in single self-assembled InP quantum dots placed in GaInP Schottky structures grown by metalorganic vapor phase epitaxy. This has been enabled by growth optimization leading to suppression of formation of large dots uncontrollably accumulating charge. Using bias- and polarization-dependent micro-photoluminescence, we identify the exciton multi-particle states and carry out a systematic study of the neutral exciton state dipole moment and polarizability. This analysis allows for the characterization of the exciton wavefunction properties at the single dot level for this type of quantum dots. Photocurrent measurements allow further characterization of exciton properties by electrical means, opening new possibilities for resonant excitation studies for such system.Comment: 7 pages, 4 figure

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP capping in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench

Spin-photon interface and spin-controlled photon switching in a nanobeam waveguide

Access to the electron spin is at the heart of many protocols for integrated and distributed quantum-information processing [1-4]. For instance, interfacing the spin-state of an electron and a photon can be utilized to perform quantum gates between photons [2,5] or to entangle remote spin states [6-9]. Ultimately, a quantum network of entangled spins constitutes a new paradigm in quantum optics [1]. Towards this goal, an integrated spin-photon interface would be a major leap forward. Here we demonstrate an efficient and optically programmable interface between the spin of an electron in a quantum dot and photons in a nanophotonic waveguide. The spin can be deterministically prepared with a fidelity of 96\%. Subsequently the system is used to implement a "single-spin photonic switch", where the spin state of the electron directs the flow of photons through the waveguide. The spin-photon interface may enable on-chip photon-photon gates [2], single-photon transistors [10], and efficient photonic cluster state generation [11]

Chirality of nanophotonic waveguide with embedded quantum emitter for unidirectional spin transfer

Scalable quantum technologies may be achieved by faithful conversion between matter qubits and photonic qubits in integrated circuit geometries. Within this context, quantum dots possess well-defined spin states (matter qubits), which couple efficiently to photons. By embedding them in nanophotonic waveguides, they provide a promising platform for quantum technology implementations. In this paper, we demonstrate that the naturally occurring electromagnetic field chirality that arises in nanobeam waveguides leads to unidirectional photon emission from quantum dot spin states, with resultant in-plane transfer of matter-qubit information. The chiral behaviour occurs despite the non-chiral geometry and material of the waveguides. Using dot registration techniques, we achieve a quantum emitter deterministically positioned at a chiral point and realize spin-path conversion by design. We further show that the chiral phenomena are much more tolerant to dot position than in standard photonic crystal waveguides, exhibit spin-path readout up to 95±5% and have potential to serve as the basis of spin-logic and network implementations