Magnetic-field effects in defect-controlled ferromagnetic Ga_{1-x}Mn_xAs semiconductors

We have studied the magnetic-field and concentration dependences of the magnetizations of the hole and Mn subsystems in diluted ferromagnetic semiconductor Ga_{1-x}Mn_xAs. A mean-field approximation to the hole-mediated interaction is used, in which the hole concentration p(x) is parametrized in terms of a fitting (of the hole effective mass and hole/local moment coupling) to experimental data on the Tc critical temperature. The dependence of the magnetizations with x, for a given temperature, presents a sharply peaked structure, with maxima increasing with applied magnetic field, which indicates that application to diluted-magnetic-semiconductor devices would require quality-control of the Mn-doping composition. We also compare various experimental data for Tc(x) and p(x) on different Ga_{1-x}Mn_xAs samples and stress the need of further detailed experimental work to assure that the experimental measurements are reproducible.Comment: RevTeX 4, 3 two-column pages, 4 colour figures; to appear in J Appl Phy

Robot at factory lite - a step-by-step educational approach to the robot assembly

In a robotics scope, an excellent way to test and improve knowledge is through competitions. In other words, it is possible to follow the results in practice, compare them with the development of other teams and improve the current solutions. The Robot At Factory Lite proposal simulates an Industry 4.0 warehouse scenario, applying education through Science, Technology, Engineering, and Mathematics (STEM) methodology, where the participants have to work on a solution to overcome its challenges. Thus, this article presents an initial electromechanical proposal, which is the basis for developing robots for this competition. The presented main concepts aim to inform the possibilities of using the robot’s parts and components. Thus, an idea can be sketched in the participants’ minds, inspiring them to use their imagination and knowledge through the presentation of this model.The authors are grateful to the Foundation for Science and Technology (FCT, Portugal) for financial support through national funds FCT/MCTES (PIDDAC) to CeDRI (UIDB/05757/2020 and UIDP/05757/2020), SusTEC (LA/P/0007/ 2021). The project that gave rise to these results received the support of a fellowship from ”la Caixa” Foundation (ID 100010434). The fellowship code is LCF/BQ/DI20/11780028.info:eu-repo/semantics/publishedVersio

Hole concentration in a diluted ferromagnetic semiconductor

We consider a mean-field approach to the hole-mediated ferromagnetism in III-V Mn-based semiconductor compounds to discuss the dependence of the hole density on that of Mn sites in Ga_{1-x}Mn_xAs. The hole concentration, p, as a function of the fraction of Mn sites, x, is parametrized in terms of the product m*J_{pd}^2 (where m* is the hole effective mass and J_{pd} is the Kondo-like hole/local-moment coupling), and the critical temperature Tc. By using experimental data for these quantities, we have established the dependence of the hole concentration with x, which can be associated with the occurrence of a reentrant metal-insulator transition taking place in the hole gas. We also calculate the dependence of the Mn magnetization with x, for different temperatures (T), and found that as T increases, the width of the composition-dependent magnetization decreases drammatically, and that the magnetization maxima also decreases, indicating the need for quality-control of Mn-doping composition in diluted magnetic semiconductor devices.Comment: 4 pages, 3 figures, RevTeX 3; Fig. 1 changed, new references adde