Spatial dispersion effects upon local excitation of extrinsic plasmons in a graphene micro-disk

Excitation of surface plasmon waves in extrinsic graphene is studied using a full-wave electromagnetic field solver as analysis engine. Particular emphasis is placed on the role played by spatial dispersion due to the finite size of the two-dimensional material at the micro-scale. A simple instructive set up is considered where the near field of a wire antenna is held at sub-micrometric distance from a disk-shaped graphene patch. The key-input of the simulation is the graphene conductivity tensor at terahertz frequencies, being modeled by the Boltzmann transport equation for the valence and conduction electrons at the Dirac points~(where a linear wave-vector dependence of the band energies is assumed). The conductivity equation is worked out in different levels of approximations, based on the relaxation time ansatz with an additional constraint for particle number conservation. Both drift and diffusion currents are shown to significantly contribute to the spatially dispersive anisotropic features of micro-scale graphene. More generally, spatial dispersion effects are predicted to influence not only plasmon propagation free of external sources, but also typical scanning probe microscopy configurations. The paper set the focus on plasmon excitation phenomena induced by near field probes, being a central issue for the design of optical devices and photonic circuits

Broadband Microwave Attenuator Based on Few Layer Graphene Flakes

This paper presents the design and fabrication of a broadband microstrip attenuator, operating at 1-20 GHz, based on few layer graphene flakes. The RF performance of the attenuator has been analyzed in depth. In particular, the use of graphene as a variable resistor is discussed and experimentally characterized at microwave frequencies. The structure of the graphene-based attenuator integrates a micrometric layer of graphene flakes deposited on an air gap in a microstrip line. As highlighted in the experiments, the graphene film can range from being a discrete conductor to a highly resistive material, depending on the externally applied voltage. As experimental evidence, it is verified that the application of a proper voltage through two bias tees changes the surface resistivity of graphene, and induces a significant change of insertion loss of the microstrip attenuator

Phase Properties of Different HfO2 Polymorphs: A DFT-Based Study

none4Background: Hafnium Dioxide (HfO2) represents a hopeful material for gate dielectric thin films in the field of semiconductor integrated circuits. For HfO2, several crystal structures are possible, with different properties which can be difficult to describe in detail from an experimental point of view. In this study, a detailed computational approach has been shown to present a complete analysis of four HfO2 polymorphs, outlining the intrinsic properties of each phase on the basis of atomistic displacements. Methods: Density functional theory (DFT) based methods have been used to accurately describe the chemical physical properties of the polymorphs. Corrective Hubbard (U) semi-empirical terms have been added to exchange correlation energy in order to better reproduce the excited-state properties of HfO2 polymorphs. Results: the monoclinic phase resulted in the lowest cohesive energy, while the orthorhombic showed peculiar properties due to its intrinsic ferroelectric behavior. DFT + U methods showed the different responses of the four polymorphs to an applied field, and the orthorhombic phase was the least likely to undergo point defects as oxygen vacancies. Conclusions: The obtained results give a deeper insight into the differences in excited states phenomena in relation to each specific HfO2 polymorph.openEmiliano Laudadio, Pierluigi Stipa, Luca Pierantoni, Davide MencarelliLaudadio, Emiliano; Stipa, Pierluigi; Pierantoni, Luca; Mencarelli, David

Numerical Techniques for the Analysis of Charge Transport and Electrodynamics in Graphene Nanoribbons

In this paper, we report on multiphysics full-wave techniques in the frequency (energy)‐domain and the time‐domain, aimed at the investigation of the combined electromagnetic‐coherent transport problem in carbon based on nano‐structured materials and devices, e.g., graphene nanoribbons. The frequency‐domain approach is introduced in order to describe a Poisson/Schrödinger system in a quasi static framework. An example of the self‐consistent solution of laterally coupled graphene nanoribbons is shown. The time‐domain approach deals with the solution of the combined Maxwell/Schrödinger system of equations. The propagation of a charge wavepacket is reported, showing the effect of the self‐generated electromagnetic field that affects the dynamics of the charge wavepacket

Cloning and mapping multiple S-locus F-box genes in European pear (Pyrus communis L.).

European pear, as well as its close relatives Japanese pear and apple, exhibits S-RNase-based gametophytic self-incompatibility. The male determinant of this self-incompatibility mechanism is a pollen-expressed protein containing an F-box domain; in the genera Petunia (Solanaceae), Antirrhinum (Plantaginaceae), and Prunus (Rosaceae), a single F-box gene determines the pollen S. In apple and Japanese pear, however, multiple S-locus F-box genes were recently identified as candidates for the pollen S, and they were named S-locus F-Box Brothers. These genes were considered good candidates for the pollen S determinant since they exhibit S-haplotype-specific polymorphisms, pollen-specific expression, and linkage to the S-RNase. In the present study, S-locus F-Box Brothers homologs have been cloned from two of the most agronomically important European pear varieties, "Abbé Fétel" (S104-2/S105) and“Max Red Bartlett" (S101/S102), and they have been mapped on a genetic linkage map developed on their progeny. Our results suggest that the number of Fbox genes linked to the S-locus of the European pear is higher than expected according with previous reports for apple and Japanese pear, since up to five genes were found to be linked to a single S-haplotype. Moreover, two of these genes exhibited an incomplete linkage to the S-RNase, allowing the identification of low-frequency recombinant haplotypes, generated by a crossing-over event between the two genes. These F-box genes are most likely placed in close proximity of the S-locus but do not belong to it, and they can thus be excluded from being responsible for the determination of pollen S function

Rigorous simulation of nonlinear optomechanical coupling in micro- and nano-structured resonant cavities

A numerical method aimed to predict the optomechanical dynamics in micro- and nano-structured resonant cavities is introduced here. The rigorousness of it is ensured by exploiting the harmonic version of the transformation optics (TO) technique and by considering all the energytransduction contributions of electrostriction, radiation pressure, photoelasticity and moving boundaries. Since our full-wave approach implements a multi-modal analysis and also considers material losses, from both a mechanical and an optical point of view, a considerable step further has been made in respect to the standard optomechanical perturbative theory. The efficiency and the versatility of the strategy are tested by analysing the optomechanical behaviour of a corrugated Si-based nanobeam and comparing numerical results to experimental ones from the literatur

Dirac Equation-Based Formulation for the Quantum Conductivity in 2D-Nanomaterials

bstract: Starting from the four component-Dirac equation for free, ballistic electrons with finite mass, driven by a constant d.c. field, we derive a basic model of scalar quantum conductivity, capable of yielding simple analytic forms, also in the presence of magnetic and polarization effects. The classical Drude conductivity is recovered as a limit case. A quantum-mechanical evaluation is provided for parabolic and linear dispersion, as in graphene, recovering currently used expressions as particular cases. Numerical values are compared with the ones from the literature in the case of graphene under d.c. applied field

Nanoscale Simulation of Three-contact Graphene Ballistic Junctions

In this work, three-terminal ballistic junctions, made of three-branch graphene nanoribbons (GNRs), are considered and simulated at the nanometric scale. The analysis is carried out by a scattering matrix approach, in a discrete formulation optimized for GNR devices. The ballisticity and the scattering properties of the junction contribute to the nonlinear behaviour, as, in fact, a sinusoidal voltage between two GNR branches results in a non-sinusoidal current at the third branch. The input-output characteristic is hardly predictable at the nanoscale, as it depends on several cooperating factors, namely the potential distribution and the geometry of the junction. Several numerical examples are shown to illustrate the above concepts