Cluster Dynamical Mean Field analysis of the Mott transition

We investigate the Mott transition using a cluster extension of dynamical mean field theory (DMFT). In the absence of frustration we find no evidence for a finite temperature Mott transition. Instead, in a frustrated model, we observe signatures of a finite temperature Mott critical point in agreement with experimental studies of kappa-organics and with single site DMFT. As the Mott transition is approached, a clear momentum dependence of the electron lifetime develops on the Fermi surface with the formation of cold regions along the diagonal direction of the Brillouin zone. Furthermore the variation of the effective mass is no longer equal to the inverse of the quasi particle residue, as in DMFT, and is reduced approaching the Mott transition.Comment: 4 page

Universality and Critical Behavior at the Mott transition

We report conductivity measurements of Cr-doped V2O3 using a variable pressure technique. The critical behavior of the conductivity near the Mott-insulator to metal critical endpoint is investigated in detail as a function of pressure and temperature. The critical exponents are determined, as well as the scaling function associated with the equation of state. The universal properties of a liquid-gas transition are found. This is potentially a generic description of the Mott critical endpoint in correlated electron materials.Comment: 3 figure

Strongly correlated properties of the thermoelectric cobalt oxide Ca3Co4O9

We have performed both in-plane resistivity, Hall effect and specific heat measurements on the thermoelectric cobalt oxide Ca$_{3}$Co$_{4}$O$_{9}$. Four distinct transport regimes are found as a function of temperature, corresponding to a low temperature insulating one up to $T_{min}\approx$63 K, a strongly correlated Fermi liquid up to $T^*\approx$140 K, with $\rho=\rho_0+AT^2$ and $A\approx 3.63$ $10^{-2} \mu \Omega cm/K^{2}$, followed by an incoherent metal with $k_Fl\leq 1$ and a high temperature insulator above T$^{**}\approx$510 K . Specific heat Sommerfeld coefficient $\gamma = 93$ mJ/(mol.K$^{2}$) confirms a rather large value of the electronic effective mass and fulfils the Kadowaki-Woods ratio $A/\gamma^2 \approx 0.45$ 10$^{-5}$ $\mu \Omega cm.K^2/(mJ^2mol^{-2})$. Resistivity measurements under pressure reveal a decrease of the Fermi liquid transport coefficient A with an increase of $T^*$ as a function of pressure while the product $A(T^*)^2/a$ remains constant and of order $h/e^2$. Both thermodynamic and transport properties suggest a strong renormalization of the quasiparticles coherence scale of order $T^*$ that seems to govern also thermopower.Comment: 5 pages, 6 figures, accepted for publication in Physical Review

Substitution Effect by Deuterated Donors on Superconductivity in κ\kappa-(BEDT-TTF)2_2Cu[N(CN)2_2]Br

We investigate the superconductivity in the deuterated BEDT-TTF molecular substitution system $\kappa$-[(h8-BEDT-TTF)$_{1-x}$(d8-BEDT-TTF)$_x$]$_2$Cu[N(CN)$_2$]Br, where h8 and d8 denote fully hydrogenated and deuterated molecules, respectively. Systematic and wide range ($x$ = 0 -- 1) substitution can control chemical pressure finely near the Mott boundary, which results in the modification of the superconductivity. After cooling slowly, the increase of $T_{\textrm{c}}$ observed up to $x \sim$ 0.1 is evidently caused by the chemical pressure effect. Neither reduction of $T_{\textrm{c}}$ nor suppression of superconducting volume fraction is found below $x \sim$ 0.5. This demonstrates that the effect of disorder by substitution is negligible in the present system. With further increase of $x$, both $T_{\textrm{c}}$ and superconducting volume fraction start to decrease toward the values in $x$ = 1.Comment: J. Phys. Soc. Jp

On the strong impact of doping in the triangular antiferromagnet CuCrO2

Electronic band structure calculations using the augmented spherical wave method have been performed for CuCrO2. For this antiferromagnetic (T_N = 24 K) semiconductor crystallizing in the delafossite structure, it is found that the valence band maximum is mainly due to the t_2g orbitals of Cr^3+ and that spin polarization is predicted with 3 mu_B per Cr^3+. The structural characterizations of CuCr1-xMgxO2 reveal a very limited range of Mg^2+ substitution for Cr^3+ in this series. As soon as x = 0.02, a maximum of 1% Cr ions substituted by Mg site is measured in the sample. This result is also consistent with the detection of Mg spinel impurities from X-ray diffraction for x = 0.01. This explains the saturation of the Mg^2+ effect upon the electrical resistivity and thermoelectric power observed for x > 0.01. Such a very weak solubility limit could also be responsible for the discrepancies found in the literature. Furthermore, the measurements made under magnetic field (magnetic susceptibility, electrical resistivity and Seebeck coefficient) support that the Cr^4+ "holes", created by the Mg^2+ substitution, in the matrix of high spin Cr^3+ (S = 3/2) are responsible for the transport properties of these compounds.Comment: 9 pages, 11 figures, more information at http://www.physik.uni-augsburg.de/~eyert

Transport criticality of the first-order Mott transition in a quasi-two-dimensional organic conductor, κ\kappa-(BEDT-TTF)2_{2}Cu[N(CN)2_{2}]Cl

An organic Mott insulator, $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl, was investigated by resistance measurements under continuously controllable He gas pressure. The first-order Mott transition was demonstrated by observation of clear jump in the resistance variation against pressure. Its critical endpoint at 38 K is featured by vanishing of the resistive jump and critical divergence in pressure derivative of resistance, $|\frac{1}{R}\frac{\partial R}{\partial P}|$, which are consistent with the prediction of the dynamical mean field theory and have phenomenological correspondence with the liquid-gas transition. The present results provide the experimental basis for physics of the Mott transition criticality.Comment: 4 pages, 5 figure

Mott transition and transport crossovers in the organic compound κ−(BEDT−TTF)2Cu[N(CN)2]Cl\kappa-(BEDT-TTF)_2 Cu[N(CN)_2] Cl

We have performed in-plane transport measurements on the two-dimensional organic salt $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl. A variable (gas) pressure technique allows for a detailed study of the changes in conductivity through the insulator-to-metal transition. We identify four different transport regimes as a function of pressure and temperature (corresponding to insulating, semi-conducting, ''bad metal'', and strongly correlated Fermi liquid behaviours). Marked hysteresis is found in the transition region, which displays complex physics that we attribute to strong spatial inhomogeneities. Away from the critical region, good agreement is found with a dynamical mean-field calculation of transport properties using the numerical renormalization group technique.Comment: 4 pages, 6 figure

A Microscopic View on the Mott transition in Chromium-doped V2O3

V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a paramagnetic insulator (PI). This or related MITs have a high technological potential, among others for intelligent windows and field effect transistors. However the spatial scale on which such transitions develop is not known in spite of their importance for research and applications. Here we unveil for the first time the MIT in Cr-doped V2O3 with submicron lateral resolution: with decreasing temperature, microscopic domains become metallic and coexist with an insulating background. This explains why the associated PM phase is actually a poor metal. The phase separation can be associated with a thermodynamic instability near the transition. This instability is reduced by pressure which drives a genuine Mott transition to an eventually homogeneous metallic state.Comment: Paper plus supplementary materia

Quantum Mott Transition and Multi-Furcating Criticality

Phenomenological theory of the Mott transition is presented. When the critical temperature of the Mott transition is much higher than the quantum degeneracy temperature, the transition is essentially described by the Ising universality class. Below the critical temperature, phase separation or first-order transition occurs. However, if the critical point is involved in the Fermi degeneracy region, a marginal quantum critical point appears at zero temperature. The originally single Mott critical point generates subsequent many unstable fixed points through various Fermi surface instabilities induced by the Mott criticality characterized by the diverging charge susceptibility or doublon susceptibility. This occurs in marginal quantum-critical region. Charge, magnetic and superconducting instabilitites compete severely under these critical charge fluctuations. The quantum Mott transition triggers multi-furcating criticality, which goes beyond the conventional concept of multicriticality in quantum phase transitions. Near the quantum Mott transition, the criticality generically drives growth of inhomogeneous structure in the momentum space with singular points of flat dispersion on the Fermi surface. The singular points determine the quantum dynamics of the Mott transition by the dynamical exponent $z=4$. We argue that many of filling-control Mott transitions are classified to this category. Recent numerical results as well as experimental results on strongly correlated systems including transition metal oxides, organic materials and $^3$He layer adsorbed on a substrate are consistently analyzed especially in two-dimensional systems.Comment: 28 pages including 2 figure

Electronic correlation in the infrared optical properties of the quasi two dimensional κ\kappa-type BEDT-TTF dimer system

The polarized optical reflectance spectra of the quasi two dimensional organic correlated electron system $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]$Y$, $Y =$ Br and Cl are measured in the infrared region. The former shows the superconductivity at $T_{\rm c} \simeq$ 11.6 K and the latter does the antiferromagnetic insulator transition at $T_{\rm N} \simeq$ 28 K. Both the specific molecular vibration mode $\nu_{3}(a_{g})$ of the BEDT-TTF molecule and the optical conductivity hump in the mid-infrared region change correlatively at $T^{*} \simeq$ 38 K of $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br, although no indication of $T^{*}$ but the insulating behaviour below $T_{\rm ins} \simeq$ 50-60 K are found in $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl. The results suggest that the electron-molecular vibration coupling on the $\nu_{3}(a_{g})$ mode becomes weak due to the enhancement of the itinerant nature of the carriers on the dimer of the BEDT-TTF molecules below $T^{*}$, while it does strong below $T_{\rm ins}$ because of the localized carriers on the dimer. These changes are in agreement with the reduction and the enhancement of the mid-infrared conductivity hump below $T^{*}$ and $T_{\rm ins}$, respectively, which originates from the transitions between the upper and lower Mott-Hubbard bands. The present observations demonstrate that two different metallic states of $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br are regarded as {\it a correlated good metal} below $T^{*}$ including the superconducting state and {\it a half filling bad metal} above $T^{*}$. In contrast the insulating state of $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl below $T_{\rm ins}$ is the Mott insulator.Comment: 8 pages, 7 figure