First-principles study of the Young's modulus of Si <001> nanowires

We report the results of first-principles density functional theory calculations of the Young's modulus and other mechanical properties of hydrogen-passivated Si nanowires. The nanowires are taken to have predominantly {100} surfaces, with small {110} facets. The Young's modulus, the equilibrium length and the residual stress of a series of prismatic wires are found to have a size dependence that scales like the surface area to volume ratio for all but the smallest wires. We analyze the physical origin of the size dependence, and compare the results to two existing models.Comment: 5 pages, 3 figure

Hole Spin Coherence in a Ge/Si Heterostructure Nanowire

Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{\mu s}$ exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.Comment: 15 pages, 4 figure

Antilocalization of Coulomb Blockade in a Ge-Si Nanowire

The distribution of Coulomb blockade peak heights as a function of magnetic field is investigated experimentally in a Ge-Si nanowire quantum dot. Strong spin-orbit coupling in this hole-gas system leads to antilocalization of Coulomb blockade peaks, consistent with theory. In particular, the peak height distribution has its maximum away from zero at zero magnetic field, with an average that decreases with increasing field. Magnetoconductance in the open-wire regime places a bound on the spin-orbit length ($l_{so}$ < 20 nm), consistent with values extracted in the Coulomb blockade regime ($l_{so}$ < 25 nm).Comment: Supplementary Information available at http://bit.ly/19pMpd

Statistical inference of the generation probability of T-cell receptors from sequence repertoires

Stochastic rearrangement of germline DNA by VDJ recombination is at the origin of immune system diversity. This process is implemented via a series of stochastic molecular events involving gene choices and random nucleotide insertions between, and deletions from, genes. We use large sequence repertoires of the variable CDR3 region of human CD4+ T-cell receptor beta chains to infer the statistical properties of these basic biochemical events. Since any given CDR3 sequence can be produced in multiple ways, the probability distribution of hidden recombination events cannot be inferred directly from the observed sequences; we therefore develop a maximum likelihood inference method to achieve this end. To separate the properties of the molecular rearrangement mechanism from the effects of selection, we focus on non-productive CDR3 sequences in T-cell DNA. We infer the joint distribution of the various generative events that occur when a new T-cell receptor gene is created. We find a rich picture of correlation (and absence thereof), providing insight into the molecular mechanisms involved. The generative event statistics are consistent between individuals, suggesting a universal biochemical process. Our distribution predicts the generation probability of any specific CDR3 sequence by the primitive recombination process, allowing us to quantify the potential diversity of the T-cell repertoire and to understand why some sequences are shared between individuals. We argue that the use of formal statistical inference methods, of the kind presented in this paper, will be essential for quantitative understanding of the generation and evolution of diversity in the adaptive immune system.Comment: 20 pages, including Appendi

Magnetoconductance oscillations in quasiballistic multimode nanowires

We calculate the conductance of quasi-one-dimensional nanowires with electronic states confined to a surface charge layer, in the presence of a uniform magnetic field. Two-terminal magnetoconductance (MC) between two leads deposited on the nanowire via tunnel barriers is dominated by density-of-states (DOS) singularities, when the leads are well apart. There is also a mesoscopic correction due to a higher-order coherent tunneling between the leads for small lead separation. The corresponding MC structure depends on the interference between electron propagation via different channels connecting the leads, which in the simplest case, for the magnetic field along the wire axis, can be crudely characterized by relative winding numbers of paths enclosing the magnetic flux. In general, the MC oscillations are aperiodic, due to the Zeeman splitting, field misalignment with the wire axis, and a finite extent of electron distribution across the wire cross section, and are affected by spin-orbit coupling. The quantum-interference MC traces contain a wealth of information about the electronic structure of multichannel wires, which would be complimentary to the DOS measurements. We propose a four-terminal configuration to enhance the relative contribution of the higher-order tunneling processes and apply our results to realistic InAs nanowires carrying several quantum channels in the surface charge-accumulation layer.Comment: 11 pages, 8 figure

Atomic layer deposition of ZnS nanotubes

We report on growth of high-aspect-ratio ($\gtrsim300$) zinc sulfide nanotubes with variable, precisely tunable, wall thicknesses and tube diameters into highly ordered pores of anodic alumina templates by atomic layer deposition (ALD) at temperatures as low as 75 $^{\circ}$C. Various characterization techniques are employed to gain information on the composition, morphology, and crystal structure of the synthesized samples. Besides practical applications, the ALD-grown tubes could be envisaged as model systems for the study of a certain class of size-dependent quantum and classical phenomena.Comment: 1 LaTeX source file, 8 eps figures, and the manuscript in PDF forma

Imaging a 1-electron InAs quantum dot in an InAs/InP nanowire

Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an InAs/InP nanowire, using the tip as a movable gate. Images of dot conductance vs. tip position at T = 4.2 K show concentric rings as electrons are added, starting with the first electron. The SPM can locate a dot along a nanowire and individually tune its charge, abilities that will be very useful for the control of coupled nanowire dots

First-principles calculation of mechanical properties of Si <001> nanowires and comparison to nanomechanical theory

We report the results of first-principles density functional theory calculations of the Young's modulus and other mechanical properties of hydrogen-passivated Si nanowires. The nanowires are taken to have predominantly {100} surfaces, with small {110} facets according to the Wulff shape. The Young's modulus, the equilibrium length and the constrained residual stress of a series of prismatic beams of differing sizes are found to have size dependences that scale like the surface area to volume ratio for all but the smallest beam. The results are compared with a continuum model and the results of classical atomistic calculations based on an empirical potential. We attribute the size dependence to specific physical structures and interactions. In particular, the hydrogen interactions on the surface and the charge density variations within the beam are quantified and used both to parameterize the continuum model and to account for the discrepancies between the two models and the first-principles results.Comment: 14 pages, 10 figure