Experimentation in securities market structure and regulation in China: from state to market

A key feature of the socialist market economy in China is the development of securities markets so as to facilitate entrepreneurship. With the national securities market now well established attention has shifted to the development of lower tier markets that may be able to meet the financing needs of smaller scale enterprises. In this article we examine how the concept of experimentation has been applied to the process of developing such markets and the regulatory framework in which they operate. We begin with a survey and critique of the policy and regulatory framework within which lower-tier markets have evolved. We argue that experimentation has been important in China but that it operates in a unique way as a result of the institutional structure in which securities markets are located. We then focus more specifically on the regulatory framework for lower tier markets and present two case studies focused on the establishment and operation of two local equity exchanges in a single province (LiaoNing). While this evidence supports our view on the significance of experimentation it also highlights the problems associated with developing lower-tier securities markets within the current policy framework

Direct observation via in situ heated stage EBSD analysis of recrystallization of phosphorous deoxidised copper in unstrained and strained conditions

Recrystallization of phosphorous deoxidised copper used for strength critical applications at elevated temperatures was investigated by means of in situ heated stage EBSD analysis using a Gatan Murano heated stage mounted within a Carl Zeiss Sigma FEGSEM electron microscope. The influence of applied strain as the result of deformation within a Nakajima test as an analogue for industrial forming on the recrystallization temperature was investigated, the impact of increased heating rates on microstructural evolution was also investigated. Inverse pole figure plots combined with regions of reduction in local misorientations and variations in geometrically necessary dislocations were used to establish the point of recrystallization and the recrystallized fraction of the material. Recrystallization was observed to occur at temperatures as low as 130 °C in highly strained samples compared to around 300 °C within the annealed samples dependent upon heating rate. Increased heating rates were observed to produce a finer final grain structure but had little effect on presence of 60° grain twins, which was influenced more by initial material condition

Plasma Processing of III-V Materials for Energy Efficient Electronics Applications

This paper reviews some recent activity at the James Watt Nanofabrication Centre in the University of Glasgow in the area of plasma processing for energy efficient compound semiconductor-based transistors. Atomic layer etching suitable for controllable recess etching in GaN power transistors will be discussed. In addition, plasma based surface passivation techniques will be reviewed for a variety of compound semiconductor materials ((100) and (110) oriented InGaAs and InGaSb)

Millimeter Wave Beam Alignment: Large Deviations Analysis and Design Insights

In millimeter wave cellular communication, fast and reliable beam alignment via beam training is crucial to harvest sufficient beamforming gain for the subsequent data transmission. In this paper, we establish fundamental limits in beam-alignment performance under both the exhaustive search and the hierarchical search that adopts multi-resolution beamforming codebooks, accounting for time-domain training overhead. Specifically, we derive lower and upper bounds on the probability of misalignment for an arbitrary level in the hierarchical search, based on a single-path channel model. Using the method of large deviations, we characterize the decay rate functions of both bounds and show that the bounds coincide as the training sequence length goes large. We go on to characterize the asymptotic misalignment probability of both the hierarchical and exhaustive search, and show that the latter asymptotically outperforms the former, subject to the same training overhead and codebook resolution. We show via numerical results that this relative performance behavior holds in the non-asymptotic regime. Moreover, the exhaustive search is shown to achieve significantly higher worst-case spectrum efficiency than the hierarchical search, when the pre-beamforming signal-to-noise ratio (SNR) is relatively low. This study hence implies that the exhaustive search is more effective for users situated further from base stations, as they tend to have low SNR.Comment: Author final manuscript, to appear in IEEE Journal on Selected Areas in Communications (JSAC), Special Issue on Millimeter Wave Communications for Future Mobile Networks, 2017 (corresponding author: Min Li

Design and Analysis of Transmit Beamforming for Millimetre Wave Base Station Discovery

In this paper, we develop an analytical framework for the initial access (a.k.a. Base Station (BS) discovery) in a millimeter-wave (mm-wave) communication system and propose an effective strategy for transmitting the Reference Signals (RSs) used for BS discovery. Specifically, by formulating the problem of BS discovery at User Equipments (UEs) as hypothesis tests, we derive a detector based on the Generalised Likelihood Ratio Test (GLRT) and characterise the statistical behaviour of the detector. The theoretical results obtained allow analysis of the impact of key system parameters on the performance of BS discovery, and show that RS transmission with narrow beams may not be helpful in improving the overall BS discovery performance due to the cost of spatial scanning. Using the method of large deviations, we identify the desirable beam pattern that minimises the average miss-discovery probability of UEs within a targeted detectable region. We then propose to transmit the RS with sequential scanning, using a pre-designed codebook with narrow and/or wide beams to approximate the desirable patterns. The proposed design allows flexible choices of the codebook sizes and the associated beam widths to better approximate the desirable patterns. Numerical results demonstrate the effectiveness of the proposed method.Comment: 30 pages, 13 figures, submitte

Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga_0.7In_0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al₂O₃

This work presents, to the best of the authors knowledge, the first experimental findings on the impact of in situ H<sub>2</sub> plasma exposure to the electrical properties of the interface between p-type Ga<sub>0.7</sub>In<sub>0.3</sub>Sb and atomic layer deposited Al<sub>2</sub>O<sub>3</sub>. The effects of trimethyl aluminium (TMA) exposure prior to Al<sub>2</sub>O<sub>3</sub> deposition, and of a post gate metal forming gas anneal (FGA) are also investigated. The control sample, which was subjected to an ex situ HCl clean prior to ALD only, demonstrated a capacitance modulation of 36.29 % before FGA. This degraded for samples exposed to the H<sub>2</sub> plasma for all plasma powers investigated. TMA exposure offered no improvement, and significantly increased the frequency dispersion in accumulation for all samples. A post gate metal FGA at 350 °C for 15 minutes was found to substantially improve the interface quality, with the capacitance modulation, frequency dispersion in accumulation and dC/dV improving by as much as 190 %, 91 %, and 170 % respectively

An integrated native mass spectrometry and top-down proteomics method that connects sequence to structure and function of macromolecular complexes.

Mass spectrometry (MS) has become a crucial technique for the analysis of protein complexes. Native MS has traditionally examined protein subunit arrangements, while proteomics MS has focused on sequence identification. These two techniques are usually performed separately without taking advantage of the synergies between them. Here we describe the development of an integrated native MS and top-down proteomics method using Fourier-transform ion cyclotron resonance (FTICR) to analyse macromolecular protein complexes in a single experiment. We address previous concerns of employing FTICR MS to measure large macromolecular complexes by demonstrating the detection of complexes up to 1.8 MDa, and we demonstrate the efficacy of this technique for direct acquirement of sequence to higher-order structural information with several large complexes. We then summarize the unique functionalities of different activation/dissociation techniques. The platform expands the ability of MS to integrate proteomics and structural biology to provide insights into protein structure, function and regulation

Terahertz Monolithic Integrated Circuits (TMICs) Array Antenna Technology On GaN-on-Low Resistivity Silicon Substrates

In this paper, we have demonstrated a viable microstrip array patch antenna technology for the first time on GaN-on-low resistivity silicon (LR-Si) substrates (ρ <; 40 Ω.cm) at H-band frequencies (220-325 GHz). The developed technology is compatible with standard MMIC technology with no requirement for high temperature processes. To mitigate the losses presented by the substrate and to enhance the performance of the integrated array antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold layer in addition to a layer of benzocyclobutene (BCB). The demonstrated 4×1 array integrated antenna showed a measured resonance frequency in agreement with our simulation at 0.27 THz; a measured S11 as low as -41 dB was obtained. A directivity, gain and radiation efficiency of 11.2 dB, 5.2 dB, and 20% respectively was observed from the 3D EM model for a 5 μm BCB inset. To the authors' knowledge, this is the first demonstration of a THz integrated microstrip array antenna for TMIC technology; this developed technology is promising for high performance III-V electronic material on low resistivity/high dielectric substrates

Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer

In this study, the impact of the stress in SiNx surface passivation layers on off-state drain and gate leakage currents and off-state breakdown voltage in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is assessed. The SiNx films were deposited at room temperature by inductively coupled plasma chemical vapour deposition (ICP-CVD). Compared to unpassivated devices, the off-state drain and gate leakage currents of AlGaN/GaN HEMTs is increased by up to 2 orders of magnitude for a 200 nm thick SiNx passivation layer with 309 MPa compressive stress. The use of a bilayer SiNx passivation scheme comprising 70 nm SiNx with 309 MPa compressive stress followed by 130 nm SiNx with 880 MPa compressive stress resulted in off-state drain and gate leakage currents reduced by up to 1 order of magnitude when compared to unpassivated devices

A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT

A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced two-dimensional electron gas for operation is presented. Single finger devices were fabricated using 10 and 20 nm plasma-enhanced chemical vapor-deposited silicon dioxide (SiO2) as the gate dielectric. They demonstrated threshold voltages (Vth) of 3 and 2 V, and very high maximum drain currents (IDSmax) of over 450 and 650 mA/mm, at a gate voltage (VGS) of 6 V, respectively. The proposed device is seen as a building block for future power electronic devices, specifically as the driven device in the cascode configuration that employs GaN-based enhancement-mode and depletion-mode devices