Ergonomia pracy w karetce pogotowia ratunkowego : opinie ratowników medycznych

Wprowadzenie. Ergonomia miejsca pracy jest tematyka budzącą już od wielu tak rosnącezainteresowanie. Dużą aktualność tematyki skłoniła mnie do podjęcia badan własnych. Cel badań. Celem pracy jest przestawienie opinii ratowników medycznych w zakresie ergonomicznych warunków pracy wewnątrz karetki pogotowia ratunkowego. Materiał i metody. Badaniom prospektywnym poddana grupa 50 (48 mężczyzn oraz 2 kobiety) w wieku od 25 do 65 lat ratowników medycznych. Badania ankietowe, bezpośrednie przeprowadzono w okresie od 1 stycznia 2015 do 30 maja 2015. Ankietę oparto na liście kontrolnej K. F. H. Murrella zawierającej 11 pytań-problemów. Wyniki i wnioski. Przeprowadzone badania pozwoliły stwierdzić, że 74% respondentów uważało, że podczas pracy wewnątrz karetki pogotowia ratunkowego mogą w sposób optymalny wykorzystywać posiadane umiejętności. 48% badanych wskazało, że urządzenia, jakie znajdują się w karetce są dostosowane do czynności, jakie wykonuje ratownik. 90% badanych ratowników medycznych jest zdania , że wnętrze karetki zostało zaprojektowane z myślą o przyszłych użytkownikach. Dla ratowników pracujących wewnątrz karetki najważniejszym kanałem komunikacji jest kanał słuchowy. Jednakowa liczba respondentów jest zdania , że najlepszym systemem łączności wewnątrz karetki jest : intercom – takiego zdania było 37% badanych i łączność głosowa- ten sposób komunikacji preferowało 37% badanych. 80% ankietowanych ratowników podkreśla, że łączność w karetce pogotowia powinna być przede wszystkim słowna. 72% badanych skarżyła się, że łączność słowna w karetce może być zakłócana przez hałas. Wszyscy badani ratownicy medyczni wskazują, że wymagania fizyczne bądź umysłowe, jakie powstają podczas wykonywania pracy w karetce pogotowia mogą prowadzić do nadmiernego przeciążenia ratownika. Wśród wielu postulatów zgłaszanych przez ankietowanych, mogących poprawić pracę wewnątrz karetki pogotowia ratunkowego dominowały dwa podstawowe: nowoczesny sprzęt i zapewnienie optymalnej liczby członków w zespole.Introduction. Workplace ergonomics has been a topic of increasing interest for many years. The ever-greater importance of this issue has encouraged the authors to pursue their own research. Aim of the study. The purpose of the study is to present the opinion of paramedics related to the ergonomics of work aboard an ambulance. Materials and methods. A group of 50 paramedics (48 men and 2 women) aged from 25 to 65 were suspected to a prospective study.The survey was conducted directly in the period from 1 January 2015 to 30 May 2015. It was based on the checklist by K. F. H. Murrell comprising 11 problem questions. Results and conclusions. The study conducted made it possible to conclude that 74% of the respondents believed that during work in an ambulance they could make optimum use of their skills. 48% of the people surveyed indicated that the equipment in the ambulance was adapted to the tasks carried out by the paramedics. 90% of the paramedics surveyed believed that the ambulance’s interior has been designed with future users in mind. The auditory channel is the most important communication channel for paramedics working on the ambulance. The same numbers of respondents were of the opinion that the best communication system inside the ambulance was intercom – such was the conviction of 37% of respondents, and voice communication – this method was preferred by 37% of those surveyed. 80% of the paramedics questioned emphasized that verbal communication especially should be used in the ambulance. 72% of the surveyed complained that verbal communication in the ambulance may be disturbed by noise. All the paramedics surveyed pointed out that both the physical or mental demands arising during work in the ambulance may lead to the paramedic becoming overburdened. Among the suggestions put forward by the surveyed, which could improve work in the ambulance, the following two were predominant: modern equipment and an optimum number of team members

AlGaInN Laser Diode Technology for Systems Applications

Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation

Lateral grating DFB AlGaInN laser diodes for optical communications and atomic clocks

AlGaInN laser diode technology is of considerable interest for telecom applications and next generation atomic optical clocks based on Sr (by using 422nm & 461nm) and Rb at 420.2nm.Very narrow linewidths (<1MHz) are required for such applications. We report lateral gratings on AlGaInN ridge waveguide laser diodes to achieve a single wavelength device with a good side mode suppression ratio (SMSR) that is suitable for atomic clock and telecom applications

Free-space and underwater GHz data transmission using AlGaInN laser diode technology

Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications; in particular for free space laser communication. Conventional underwater communication is done acoustically with very slow data rates, short reach, and vulnurable for interception. AlGaInN blue-green laser diode technology allows the possibility of both airbourne links and underwater telecom that operate at very fast data rates (GHz), long reach (100’s of metres underwater) and can also be quantum encrypted. The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Galliumnitride (GaN) blue laser diode is reported in free-space and underwate

High Speed Visible Light Communication Using Blue GaN Laser Diodes

GaN-based laser diodes have been developed over the last 20 years making them desirable for many security and defence applications, in particular, free space laser communications. Unlike their LED counterparts, laser diodes are not limited by their carrier lifetime which makes them attractive for high speed communication, whether in free space, through fiber or underwater. Gigabit data transmission can be achieved in free space by modulating the visible light from the laser with a pseudo-random bit sequence (PRBS), with recent results approaching 5 Gbit/s error free data transmission. By exploiting the low-loss in the blue part of the spectrum through water, data transmission experiments have also been conducted to show rates of 2.5 Gbit/s underwater. Different water types have been tested to monitor the effect of scattering and to see how this affects the overall transmission rate and distance. This is of great interest for communication with unmanned underwater vehicles (UUV) as the current method using acoustics is much slower and vulnerable to interception. These types of laser diodes can typically reach 50-100 mW of power which increases the length at which the data can be transmitted. This distance could be further improved by making use of high power laser arrays. Highly uniform GaN substrates with low defectivity allow individually addressable laser bars to be fabricated. This could ultimately increase optical power levels to 4 W for a 20-emitter array. Overall, the development of GaN laser diodes will play an important part in free space optical communications and will be vital in the advancement of security and defence applications

Long-Term Efficacy and Safety in Patients With Rheumatoid Arthritis Continuing on SB4 or Switching From Reference Etanercept to SB4

Objectives: SB4 (Benepali, Brenzys) is a biosimilar of reference etanercept (ETN). In a randomised, double-blind, 52-week study, SB4 demonstrated comparable efficacy and safety to ETN in patients with rheumatoid arthritis (RA). The open-label extension period evaluated long-term efficacy, safety and immunogenicity when continuing SB4 versus switching from ETN to SB4. Methods: In the randomised, double-blind phase, patients received weekly subcutaneous administration of 50 mg SB4 or ETN with background methotrexate for up to 52 weeks. Patients in the Czech Republic and Poland who completed the 52-week visit were enrolled in the open-label extension period and received SB4 for 48 additional weeks. Efficacy, safety and immunogenicity were assessed up to week 100. Results: Of 245 patients entering the extension period, 126 continued to receive SB4 (SB4/SB4) and 119 switched to SB4 (ETN/SB4). American College of Rheumatology (ACR) response rates were sustained and comparable between SB4/SB4 and ETN/SB4 with ACR20 response rates at week 100 of 77.9% and 79.1%, respectively. Other efficacy results, including radiographic progression, were also comparable between the groups. After week 52, rates of treatment-emergent adverse events were 47.6% (SB4/SB4) and 48.7% (ETN/SB4); one patient/group developed non-neutralising antidrug antibodies. No cases of active tuberculosis or injection-site reactions were reported during the extension period. One patient (SB4/SB4) died of hepatic cancer. Conclusions: SB4 was effective and well tolerated over 2 years in patients with RA. Efficacy, safety and immunogenicity were comparable between the SB4/SB4 and ETN/SB4 groups, showing no risk associated with switching patients from ETN to SB4

Distributed feedback InGaN/GaN laser diodes

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length

HIGH PRESSURE FREEZE-OUT OF ELECTRONS IN UNDOPED GaN CRYSTAL. PROOF OF EXISTENCE OF RESONANT DONOR STATE (NITROGEN VACANCY)

We investigated free carriers related opticał absorption in GaN in hydrostatic pressures up to 30 GPa. The disappearance of this absorption at pressures close to 18 GPa was explained by trapping electrons resulting from the shift of nitrogen vacancy related donor level into the GaN energy gap at high pressure. We estimated the energetic position of this level at atmospheric pressure to be about 0.8 eV above the conduction band minimum

Recent progress in distributed feedback InGaN/GaN laser diodes

Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+

Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates

We report on high-excitation luminescence spectroscopy in In x Ga 1−x N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures