81 research outputs found
Конкурентоспособность фирм в условиях рыночной экономики
Объектом исследования является: предприятие – АО "Сибирская Аграрная Группа".
Цель работы – разработать рекомендации по повышению конкурентоспособности АО "Сибирская Аграрная Группа".
В процессе исследования проводились оценка конкурентоспособности, анализ основных конкурентов и разработка мероприятий по повышению конкурентоспособности АО "Сибирская Аграрная Группа".
Актуальность темы выпускной квалифицированной работы состоит в том, что в условиях стремительно развивающейся рыночной экономики конкурентоспособность предприятия, определяет основу для разработки экономической стратегии, помогает проанализировать состояние и возможность для предприятия выдержать конкуренцию.The object of the study is: the enterprise is JSC "Siberian Agrarian Group".
The purpose of the work is to develop recommendations for increasing the competitiveness of JSC "Siberian Agrarian Group".
In the process of the study, competitiveness assessment, analysis of the main competitors and development of measures to increase the competitiveness of JSC "Siberian Agrarian Group" were conducted.
The topicality of the topic of the final qualified work is that, in a rapidly developing market economy, the competitiveness of an enterprise, determines the basis for the development of an economic strategy, helps to analyze the state and the opportunity for an enterprise to withstand competition
Wide spectral photoresponse of layered platinum diselenide-based photodiodes
Platinum diselenide (PtSe2) is a group-10 transition metal dichalcogenide (TMD) that has unique electronic properties, in particular a semimetal-to-semiconductor transition when going from bulk to monolayer form. We report on vertical hybrid Schottky barrier diodes (SBDs) of two-dimensional (2D) PtSe2 thin films on crystalline n-type silicon. The diodes have been fabricated by transferring large-scale layered PtSe2 films, synthesized by thermally assisted conversion of predeposited Pt films at back-end-of-the-line CMOS compatible temperatures, onto SiO2/Si substrates. The diodes exhibit obvious rectifying behavior with a photoresponse under illumination. Spectral response analysis reveals a maximum responsivity of 490 mA/W at photon energies above the Si bandgap and relatively weak responsivity, in the range of 0.1–1.5 mA/W, at photon energies below the Si bandgap. In particular, the photoresponsivity of PtSe2 in infrared allows PtSe2 to be utilized as an absorber of infrared light with tunable sensitivity. The results of our study indicate that PtSe2 is a promising option for the development of infrared absorbers and detectors for optoelectronics applications with low-temperature processing conditions
Photocurrent measurements of supercollision cooling in graphene
The cooling of hot electrons in graphene is the critical process underlying
the operation of exciting new graphene-based optoelectronic and plasmonic
devices, but the nature of this cooling is controversial. We extract the hot
electron cooling rate near the Fermi level by using graphene as novel
photothermal thermometer that measures the electron temperature () as it
cools dynamically. We find the photocurrent generated from graphene
junctions is well described by the energy dissipation rate , where the heat capacity is and is the
base lattice temperature. These results are in disagreement with predictions of
electron-phonon emission in a disorder-free graphene system, but in excellent
quantitative agreement with recent predictions of a disorder-enhanced
supercollision (SC) cooling mechanism. We find that the SC model provides a
complete and unified picture of energy loss near the Fermi level over the wide
range of electronic (15 to 3000 K) and lattice (10 to 295 K) temperatures
investigated.Comment: 7pages, 5 figure
Quantum interference and Klein tunneling in graphene heterojunctions
The observation of quantum conductance oscillations in mesoscopic systems has
traditionally required the confinement of the carriers to a phase space of
reduced dimensionality. While electron optics such as lensing and focusing have
been demonstrated experimentally, building a collimated electron interferometer
in two unconfined dimensions has remained a challenge due to the difficulty of
creating electrostatic barriers that are sharp on the order of the electron
wavelength. Here, we report the observation of conductance oscillations in
extremely narrow graphene heterostructures where a resonant cavity is formed
between two electrostatically created bipolar junctions. Analysis of the
oscillations confirms that p-n junctions have a collimating effect on
ballistically transmitted carriers. The phase shift observed in the conductance
fringes at low magnetic fields is a signature of the perfect transmission of
carriers normally incident on the junctions and thus constitutes a direct
experimental observation of ``Klein Tunneling.''Comment: 13 pages and 6 figures including supplementary information. The paper
has been modified in light of new theoretical results available at
arXiv:0808.048
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Plasma-Enhanced Atomic Layer Deposition of Al<inf>2</inf>O<inf>3</inf> on Graphene Using Monolayer hBN as Interfacial Layer
Abstract: The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. The plasma enhanced atomic layer deposition of 10 nm thin high quality aluminum oxide (Al2O3) on graphene is demonstrated using a monolayer of hexagonal boron nitride (hBN) as protection layer. Raman spectroscopy is performed to analyze possible structural changes of the graphene lattice caused by the plasma deposition. The results show that a monolayer of hBN in combination with an optimized deposition process can effectively protect graphene from damage, while significant damage is observed without an hBN layer. Electrical characterization of double gated graphene field effect devices confirms that the graphene does not degrade during the plasma deposition of Al2O3. The leakage current densities are consistently below 1 pA µm−2 for electric fields across the insulators of up to 8 MV cm−1, with irreversible breakdown happening above. Such breakdown electric fields are typical for Al2O3 and can be seen as an indicator for high quality dielectric films
Photoconductivity of biased graphene
Graphene is a promising candidate for optoelectronic applications such as
photodetectors, terahertz imagers, and plasmonic devices. The origin of
photoresponse in graphene junctions has been studied extensively and is
attributed to either thermoelectric or photovoltaic effects. In addition, hot
carrier transport and carrier multiplication are thought to play an important
role. Here we report the intrinsic photoresponse in biased but otherwise
homogeneous graphene. In this classic photoconductivity experiment, the
thermoelectric effects are insignificant. Instead, the photovoltaic and a
photo-induced bolometric effect dominate the photoresponse due to hot
photocarrier generation and subsequent lattice heating through electron-phonon
cooling channels respectively. The measured photocurrent displays polarity
reversal as it alternates between these two mechanisms in a backgate voltage
sweep. Our analysis yields elevated electron and phonon temperatures, with the
former an order higher than the latter, confirming that hot electrons drive the
photovoltaic response of homogeneous graphene near the Dirac point
Dual-gated bilayer graphene hot electron bolometer
Detection of infrared light is central to diverse applications in security,
medicine, astronomy, materials science, and biology. Often different materials
and detection mechanisms are employed to optimize performance in different
spectral ranges. Graphene is a unique material with strong, nearly
frequency-independent light-matter interaction from far infrared to
ultraviolet, with potential for broadband photonics applications. Moreover,
graphene's small electron-phonon coupling suggests that hot-electron effects
may be exploited at relatively high temperatures for fast and highly sensitive
detectors in which light energy heats only the small-specific-heat electronic
system. Here we demonstrate such a hot-electron bolometer using bilayer
graphene that is dual-gated to create a tunable bandgap and
electron-temperature-dependent conductivity. The measured large electron-phonon
heat resistance is in good agreement with theoretical estimates in magnitude
and temperature dependence, and enables our graphene bolometer operating at a
temperature of 5 K to have a low noise equivalent power (33 fW/Hz1/2). We
employ a pump-probe technique to directly measure the intrinsic speed of our
device, >1 GHz at 10 K.Comment: 5 figure
Revealing the planar chemistry of two-dimensional heterostructures at the atomic level
Two-dimensional (2D) atomic crystals and their heterostructures are an intense area of study owing to their unique properties that result from structural planar confinement. Intrinsically, the performance of a planar vertical device is linked to the quality of its 2D components and their interfaces, therefore requiring characterization tools that can reveal both its planar chemistry and morphology. Here, we propose a characterization methodology combining (micro-) Raman spectroscopy, atomic force microscopy and time-of-flight secondary ion mass spectrometry to provide structural information, morphology and planar chemical composition at virtually the atomic level, aimed specifically at studying 2D vertical heterostructures. As an example system, a graphene-on-h-BN heterostructure is analysed to reveal, with an unprecedented level of detail, the subtle chemistry and interactions within its layer structure that can be assigned to specific fabrication steps. Such detailed chemical information is of crucial importance for the complete integration of 2D heterostructures into functional devicesopen2
Graphene Photonics and Optoelectronics
The richness of optical and electronic properties of graphene attracts
enormous interest. Graphene has high mobility and optical transparency, in
addition to flexibility, robustness and environmental stability. So far, the
main focus has been on fundamental physics and electronic devices. However, we
believe its true potential to be in photonics and optoelectronics, where the
combination of its unique optical and electronic properties can be fully
exploited, even in the absence of a bandgap, and the linear dispersion of the
Dirac electrons enables ultra-wide-band tunability. The rise of graphene in
photonics and optoelectronics is shown by several recent results, ranging from
solar cells and light emitting devices, to touch screens, photodetectors and
ultrafast lasers. Here we review the state of the art in this emerging field.Comment: Review Nature Photonics, in pres
Broadband, Polarization-Sensitive Photodetector Based on Optically-Thick Films of Macroscopically Long, Dense, and Aligned Carbon Nanotubes
Increasing performance demands on photodetectors and solar cells require the development of entirely new
materials and technological approaches.Wereport on the fabrication and optoelectronic characterization of
a photodetector based on optically-thick films of dense, aligned, and macroscopically long single-wall
carbon nanotubes. The photodetector exhibits broadband response from the visible to the mid-infrared
under global illumination, with a response time less than 32 ms. Scanning photocurrent microscopy
indicates that the signal originates at the contact edges, with an amplitude and width that can be tailored by
choosing different contact metals. A theoretical model demonstrates the photothermoelectric origin of the
photoresponse due to gradients in the nanotube Seebeck coefficient near the contacts. The experimental and
theoretical results open a new path for the realization of optoelectronic devices based on
three-dimensionally organized nanotubes
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