17 research outputs found

    Generation‐recombination noise analysis in heavily doped p‐type GaAs transmission line models

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    Low-frequency noise measurements are performed on heavily doped p-type GaAs transmission line models. Excess noise exhibits 1/f noise and generation-recombination (GR) noise components. A study of the GR components vs device geometry shows the spectral densities due to contact resistances to be negligible. Thus the noise sources due to the volume resistances are predominant, and have to be located in the bulk layer or in the space-charge region of the devices. These two possibilities concerning the location of the GR noise sources are investigated. For both cases, expressions for the variance and the relaxation time associated to fluctuations in the charge carriers are given. The comparison between the experimental data with the theoretical results shows that the GR noise sources are located in all probability in the space-charge region

    Shot noise in mesoscopic systems

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    This is a review of shot noise, the time-dependent fluctuations in the electrical current due to the discreteness of the electron charge, in small conductors. The shot-noise power can be smaller than that of a Poisson process as a result of correlations in the electron transmission imposed by the Pauli principle. This suppression takes on simple universal values in a symmetric double-barrier junction (suppression factor 1/2), a disordered metal (factor 1/3), and a chaotic cavity (factor 1/4). Loss of phase coherence has no effect on this shot-noise suppression, while thermalization of the electrons due to electron-electron scattering increases the shot noise slightly. Sub-Poissonian shot noise has been observed experimentally. So far unobserved phenomena involve the interplay of shot noise with the Aharonov-Bohm effect, Andreev reflection, and the fractional quantum Hall effect.Comment: 37 pages, Latex, 10 figures (eps). To be published in "Mesoscopic Electron Transport," edited by L. P. Kouwenhoven, G. Schoen, and L. L. Sohn, NATO ASI Series E (Kluwer Academic Publishing, Dordrecht

    Shot Noise in Mesoscopic Systems

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    G-R noise in submicron semiconductor layers: influence of the edges

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    Generation‐recombination noise in submicron semiconductor layers: Influence of the edge

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    In highly doped thin semiconductor layers one often observes generation-recombination (g-r) noise with a broadened Lorentzian-like spectrum. In a theoretical analysis we have shown that such a spectrum can be ascribed to g-r processes between conduction band and monoenergetic traps in the edge of the layers

    Generation‐recombination noise in submicron semiconductor layers: Influence of the edge

    No full text
    In highly doped thin semiconductor layers one often observes generation-recombination (g-r) noise with a broadened Lorentzian-like spectrum. In a theoretical analysis we have shown that such a spectrum can be ascribed to g-r processes between conduction band and monoenergetic traps in the edge of the layers

    Toward all optical interconnections in chip multiprocessor

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    International audienceThe increasing need to reduce power consumption and interconnection complexity in optical network on chip requires new configurations and strategies to interconnect cores in one chip. In this paper we present a new configuration of an optical network on chip (ONoC) in which the routing of control and payload data is done optically. So we can reduce the use of electric signals in the router itself. To validate and confirm our choice, we conducted a study of all types of losses that may happen to the signal across the network using FDTD-based simulators, and finally taking into account the results of this study, we present an algorithm that allows us to estimate the maximum loss of each connection between any processors of the network. This estimation allows us to assess the reliability of such configuration. In a network, the number of rings in each router was reduced to 4, allowing 30% reduction of power consumption compared to Huaxi Gu et al . We will study too active microresonator behavior, mainly resonance frequency in order to find the most suitable frequency to modulate signals. The use of such routers in ONoC has several benefits such as a static and simple routing algorithm and more interconnection capacity compared to other proposed routers
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