Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in situ by reflection high energy electron diffraction and ex situ by high resolution x-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron–heavy hole (e1–hh1) and electron–light hole (e1–lh1) transitions in the InAsSbN MQW, with a cut off wavelength ~4.20 µm and peak detectivity D *  =  1.25  ×  109 cm Hz1/2 W−1

Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys

Photoreflectance spectroscopy has been used to study the energy gap and spin-orbit splitting in InNAsSb alloys containing different amounts of nitrogen and antimony. It has been observed that nitrogen mainly affects the conduction band, without having any influence on the spin-orbit splitting, whereas antimony significantly modifies the spin-orbit splitting. The N- and Sb-related modifications to the band structure lead to alloys which have a spin orbit splitting larger than the energy gap. Consequently, InNAsSb alloys are very promising for use in optoelectronic devices since they offer a route towards the reduction of non-radiative Auger recombination