Finite-Element Modelling of Biotransistors

Current research efforts in biosensor design attempt to integrate biochemical assays with semiconductor substrates and microfluidic assemblies to realize fully integrated lab-on-chip devices. The DNA biotransistor (BioFET) is an example of such a device. The process of chemical modification of the FET and attachment of linker and probe molecules is a statistical process that can result in variations in the sensed signal between different BioFET cells in an array. In order to quantify these and other variations and assess their importance in the design, complete physical simulation of the device is necessary. Here, we perform a mean-field finite-element modelling of a short channel, two-dimensional BioFET device. We compare the results of this model with one-dimensional calculation results to show important differences, illustrating the importance of the molecular structure, placement and conformation of DNA in determining the output signal

Crystallographic reconstruction study of the effects of finish rolling temperature on the variant selection during bainite transformation in C-Mn high-strength steels

The effect of finish rolling temperature (FRT) on the austenite- () to-bainite () phase transformation is quantitatively investigated in high-strength C-Mn steels. In particular, the present study aims to clarify the respective contributions of the conditioning during the hot rolling and the variant selection (VS) during the phase transformation to the inherited texture. To this end, an alternative crystallographic reconstruction procedure, which can be directly applied to experimental electron backscatter diffraction (EBSD) mappings, is developed by combining the best features of the existing models: the orientation relationship (OR) refinement, the local pixel-by-pixel analysis and the nuclei identification and spreading strategy. The applicability of this method is demonstrated on both quenching and partitioning (Q&P) and as-quenched lath-martensite steels. The results obtained on the C-Mn steels confirm that the sample finish rolled at the lowest temperature (829{\deg}C) exhibits the sharpest transformation texture. It is shown that this sharp texture is exclusively due to a strong VS from parent brass {110}, S {213} and Goss {110} grains, whereas the VS from the copper {112} grains is insensitive to the FRT. In addition, a statistical VS analysis proves that the habit planes of the selected variants do not systematically correspond to the predicted active slip planes using the Taylor model. In contrast, a correlation between the Bain group to which the selected variants belong and the FRT is clearly revealed, regardless of the parent orientation. These results are discussed in terms of polygranular accommodation mechanisms, especially in view of the observed development in the hot-rolled samples of high-angle grain boundaries with misorientation axes between and

Frequency drift in MR spectroscopy at 3T

Purpose: Heating of gradient coils and passive shim components is a common cause of instability in the B-0 field, especially when gradient intensive sequences are used. The aim of the study was to set a benchmark for typical drift encountered during MR spectroscopy (MRS) to assess the need for real-time field-frequency locking on MRI scanners by comparing field drift data from a large number of sites.Method: A standardized protocol was developed for 80 participating sites using 99 3T MR scanners from 3 major vendors. Phantom water signals were acquired before and after an EPI sequence. The protocol consisted of: minimal preparatory imaging; a short pre-fMRI PRESS; a ten-minute fMRI acquisition; and a long post-fMRI PRESS acquisition. Both pre- and post-fMRI PRESS were non-water suppressed. Real-time frequency stabilization/adjustment was switched off when appropriate. Sixty scanners repeated the protocol for a second dataset. In addition, a three-hour post-fMRI MRS acquisition was performed at one site to observe change of gradient temperature and drift rate. Spectral analysis was performed using MATLAB. Frequency drift in pre-fMRI PRESS data were compared with the first 5:20 minutes and the full 30:00 minutes of data after fMRI. Median (interquartile range) drifts were measured and showed in violin plot. Paired t-tests were performed to compare frequency drift pre- and post-fMRI. A simulated in vivo spectrum was generated using FID-A to visualize the effect of the observed frequency drifts. The simulated spectrum was convolved with the frequency trace for the most extreme cases. Impacts of frequency drifts on NAA and GABA were also simulated as a function of linear drift. Data from the repeated protocol were compared with the corresponding first dataset using Pearson's and intraclass correlation coefficients (ICC).Results: Of the data collected from 99 scanners, 4 were excluded due to various reasons. Thus, data from 95 scanners were ultimately analyzed. For the first 5:20 min (64 transients), median (interquartile range) drift was 0.44 (1.29) Hz before fMRI and 0.83 (1.29) Hz after. This increased to 3.15 (4.02) Hz for the full 30 min (360 transients) run. Average drift rates were 0.29 Hz/min before fMRI and 0.43 Hz/min after. Paired t-tests indicated that drift increased after fMRI, as expected (p &lt; 0.05). Simulated spectra convolved with the frequency drift showed that the intensity of the NAA singlet was reduced by up to 26%, 44 % and 18% for GE, Philips and Siemens scanners after fMRI, respectively. ICCs indicated good agreement between datasets acquired on separate days. The single site long acquisition showed drift rate was reduced to 0.03 Hz/min approximately three hours after fMRI.Discussion: This study analyzed frequency drift data from 95 3T MRI scanners. Median levels of drift were relatively low (5-min average under 1 Hz), but the most extreme cases suffered from higher levels of drift. The extent of drift varied across scanners which both linear and nonlinear drifts were observed.</p

Formation of high-quality silicon dioxide films by electron cyclotron resonance plasma oxidation and plasma-enhanced chemical vapour deposition

High-quality silicon dioxide films have been deposited by plasma-enhanced chemical vapour deposition and plasma oxidation using a single magnet electron cyclotron resonance plasma generator with both oxygen and nitrous oxide as the oxygen source, Langmuir probe measurements were used to characterise both molecular oxygen and nitrous oxide discharges. Low electron temperatures, resulting in low sheath potential drops, coupled with the shape of the field lines results in low sputtering from the chamber walls between the source region and substrate. The resulting buildup of an insulating layer of oxide on the chamber walls results in a very clean process. In situ thermal desorption and ellipsometry measurements coupled with X-ray photoelectron spectroscopy have allowed us to characterise the quality of the silicon surface prior to deposition and just after initiation of the plasma. Plasma oxidation dominates over chemical vapour deposition during the early stages of oxide film growth using either oxygen or nitrous oxide as the oxygen source gas. Extensive ex-situ spectroscopic ellipsometry (SE) indicates that the bulk properties of the films arc comparable to those of high-temperature thermal oxides. There is no interface layer measurable by SE for any of the films produced by plasma oxidation or chemical vapour deposition with silane using either molecular oxygen or nitrous oxide as the oxygen source gas even though the latter results in approximately a monolayer of nitrogen at the Si/SiO2 interface. Chemical analysis by the total reflected X-ray fluorescence technique and by vapour-phase deposition coupled with graphite furnace atomic absorption spectroscopy found no impurities in the films made with silane and molecular oxygen. The high quality of the Si/SiO2 interface made with these two gases was confirmed by capacitance-voltage measurements on Al-gate capacitors. After a 1 min anneal at 950\ub0C interface state densities below 3 71010 eV 121 cm 122 were obtained.Peer reviewed: YesNRC publication: Ye

The Role of Austenite Grain Misorientation on on Ferrite Nucleation in an Fe-Cr-Ni Alloy

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Chemical sputtering by H2+ and H3+ ions during silicon deposition

We investigated chemical sputtering of silicon films by Hy + ions (with y being 2 and 3) in an asymmetric VHF Plasma Enhanced Chemical Vapor Deposition (PECVD) discharge in detail. In experiments with discharges created with pure H2 inlet flows, we observed that more Si was etched from the powered than from the grounded electrode, and this resulted in a net deposition on the grounded electrode. With experimental input data from a power density series of discharges with pure H2 inlet flows, we were able to model this process with a chemical sputtering mechanism. The obtained chemical sputtering yields were (0.3–0.4) ± 0.1 Si atom per bombarding Hy + ion at the grounded electrode and at the powered electrode the yield ranged from (0.4 to 0.65) ± 0.1. Subsequently, we investigated the role of chemical sputtering during PECVD deposition with a series of silane fractions SF (SF(%) = [SiH4]/[H2]*100) ranging from SF = 0% to 20%. We experimentally observed that the SiHy + flux is not proportional to SF but decreasing from SF = 3.4% to 20%. This counterintuitive SiHy + flux trend was partly explained by an increasing chemical sputtering rate with decreasing SF and partly by the reaction between H3 + and SiH4 that forms SiH3 +