Ultrashort-pulse laser with an intracavity phase shaping element

A novel ultrashort-pulse laser cavity configuration that incorporates an intracavity deformable mirror as a phase control element is reported. A user-defined spectral phase relation of 0.7 radians relative shift could be produced at around 1035 nm. Phase shaping as well as pulse duration optimization was achieved via a computer-controlled feedback loop

Towards an all-integrated MOPA configuration using Yb-doped ion-exchanged waveguides

In this paper, we present an ion-exchanged Yb-glass waveguide amplifier, seeded by an ion-exchanged Yb-glass waveguide laser demonstrating a gain as high as 10 dB. We also present multi-GHz, mode-locked ion-exchanged waveguide lasers and discuss the development of a fully integrated high-power, multi-GHz waveguide sourc

Titanium sapphire : A decade of diode-laser pumping

For many years, Ti:sapphire was the prototypical example of a solid-state laser material that could not be diode pumped. The rationale for this assessment follows from the laser properties of Ti:sapphire, which combine to demand high brightness pumping in the blue-green region (see fig. 1 [1]). The development of efficient Gallium Nitride (GaN) based laser diodes eroded this logic [2], and improvements in the spatial brightness of GaN diode lasers subsequently enabled the first demonstration of a directly diode-laser pumped Ti:sapphire laser in 2009 [3], This presentation will outline the physics that makes diode-pumping difficult, and the developments that mean, it is, nonetheless, possible. Interestingly, diode-pumping of CW and modelocked Ti:sapphire lasers was achieved not by a radical redesign of the laser, but by careful optimisation of existing approaches that enabled the rapidly improving brightness of GaN diode lasers to be exploited [3-5]

Passive mode locking of a Tm,Ho:KY(WO4)(2) laser around 2 μm

We report the first demonstration, to our knowledge, of passive mode locking in a Tm3+, Ho3+-codoped KYWO42 laser operating in the 2000-2060 nm spectral region. An InGaAsSb-based quantum well semiconductor saturable absorber mirror is used for the initiation and stabilization of the ultrashort pulse generation. Pulses as short as 3.3 ps were generated at 2057 nm with average output powers up to 315 mW at a pulse repetition frequency of 132 MHz for 1.15 W of absorbed pump power at 802 nm from a Ti:sapphire laser

Ultrafast diode-pumped Ti:sapphire laser with broad tunability

We report a broadly wavelength-tunable femtosecond diode-pumped Ti:sapphire laser, passively mode-locked using both semiconductor saturable absorber mirror (SESAM) and Kerr-lens mode-locking (KLM) techniques. Using two pump laser diodes (operating at 450 nm), an average output power as high as 433 mW is generated during mode-locking with the SESAM. A tunability range of 37 nm (788-825 nm) was achieved with the shortest pulse duration of 62 fs at 812 nm. In the KLM regime, an average output power as high as 382 mW, pulses as short as 54 fs, and a tunability of 120 nm (755-875 nm) are demonstrated

A broadly tunable ultrafast diode-pumped Ti:sapphire laser

We report a diode-pumped ultrafast Ti:sapphire laser tunable over a 50 nm range. Sub-100 fs pulses are generated at a pulse repetition rate of 139 MHz with a maximum average output power of 430 mW

Near-infrared, mode-locked waveguide lasers with multi-GHz repetition rates

In this work, we discuss mode-locking results obtained with low-loss, ion-exchanged waveguide lasers. With Yb3+-doped phosphate glass waveguide lasers, a repetition rate of up to 15.2 GHz was achieved at a wavelength of 1047 nm with an average power of 27 mW and pulse duration of 811 fs. The gap between the waveguide and the SESAM introduced negative group velocity dispersion via the Gires Tournois Interferometer (GTI) effect which allowed the soliton mode-locking of the device. A novel quantum dot SESAM was used to mode-lock Er3+, Yb3+-doped phosphate glass waveguide lasers around 1500 nm. Picosecond pulses were achieved at a maximum repetition rate of 6.8 GHz and an average output power of 30 mW. The repetition rate was tuned by more than 1 MHz by varying the pump power

Diode-pumped femtosecond Tm3+-doped LuScO3 laser near 2.1 μm

We report on the first demonstration, to the best of our knowledge, of a diode-pumped Tm:LuScO3 laser. Efficient and broadly tunable continuous wave operation in the 1973–2141 nm region and femtosecond mode-locking through the use of an ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror are realized. When mode-locked, near-transform-limited pulses as short as 170 fs were generated at 2093 nm with an average output power of 113 mW and a pulse repetition frequency of 115.2 MHz. Tunable picosecond pulse generation was demonstrated in the 2074–2104 nm spectral range

Ultrafast laser inscribed Yb:KGd(WO4)2 and Yb:KY(WO4)2 channel waveguide lasers

We demonstrate laser action in diode-pumped microchip monolithic cavity channel waveguides of Yb:KGd(WO4)2 and Yb:KY(WO4)2 that were fabricated by ultrafast laser writing. The maximum output power achieved was 18.6 mW with a threshold of approximately 100 mW from an Yb:KGd(WO4)2waveguide laser operating at 1023 nm. The propagation losses for this waveguide structure were measured to be 1.9 dBcm−1

1.9 µm waveguide laser fabricated by ultrafast laser inscription in Tm:Lu2O3 ceramic

Funding: UK Engineering and Physical Sciences Research Council (EPSRC) (EP/G037523/1, EP/L01596X/1).The ultrafast laser inscription technique has been used to fabricate channel waveguides in Tm3+-doped Lu2O3 ceramic gain medium for the first time to our knowledge. Laser operation has been demonstrated using a monolithic microchip cavity with a continuous-wave Ti:sapphire pump source at 796 nm. The maximum output power achieved from the Tm:Lu2O3 waveguide laser was 81 mW at 1942 nm. A maximum slope efficiency of 9.5% was measured with the laser thresholds observed to be in the range of 50-200 mW of absorbed pump power. Propagation losses for this waveguide structure are calculated to be 0.7 dB⋅cm−1 ± 0.3 dB⋅cm−1 at the lasing wavelength.PostprintPeer reviewe