On-Going Radiation Effects on FPGAs - Lessons Learned and Plans

No abstract availabl

Incorporating Probability Models of Complex Test Structures to Perform Technology Independent FPGA Single Event Upset Analysis

We present SEU test and analysis of the Microsemi ProASIC3 FPGA. SEU Probability models are incorporated for device evaluation. Included is a comparison to the RTAXS FPGA illustrating the effectiveness of the overall testing methodology

Enhancing Observability of Signal Composition and Error Signatures During Dynamic SEE Analog to Digital Device Testing

A novel approach to dynamic SEE ADC testing is presented. The benefits of this test scheme versus prior implemented techniques include the ability to observe ADC SEE errors that are in the form of phase shifts, single bit upsets, bursts of disrupted signal composition, and device clock loss

Effectiveness of Internal vs. External SEU Scrubbing Mitigation Strategies in a Xilinx FPGA: Design, Test, and Analysis

We compare two scrubbing mitigation schemes for Xilinx FPGA devices. The design of the scrubbers is briefly discussed along with an examination of mitigation limitations. Proton and Heavy Ion data are then presented and analyzed

TID and SEE Response of an Advanced Samsung 4G NAND Flash Memory

Initial total ionizing dose (TID) and single event heavy ion test results are presented for an unhardened commercial flash memory, fabricated with 63 nm technology. Results are that the parts survive to a TID of nearly 200 krad (SiO2), with a tractable soft error rate of about 10(exp -l2) errors/bit-day, for the Adams Ten Percent Worst Case Environment

Use of Commercial FPGA-Based Evaluation Boards for Single-Event Testing of DDR2 and DDR3 SDRAMs

We investigate the use of commercial FPGA based evaluation boards for radiation testing DDR2 and DDR3 SDRAMs. We evaluate the resulting data quality and the tradeoffs involved in the use of these boards

Radiation Performance of 1 Gbit DDR SDRAMs Fabricated in the 90 nm CMOS Technology Node

We present Single Event Effect (SEE) and Total Ionizing Dose (TID) data for 1 Gbit DDR SDRAMs (90 nm CMOS technology) as well as comparing this data with earlier technology nodes from the same manufacturer

Investigation of Current Spike Phenomena During Heavy Ion Irradiation of NAND Flash Memories

A series of heavy ion and laser irradiations were performed to investigate previously reported current spikes in flash memories. High current events were observed, however, none matches the previously reported spikes. Plausible mechanisms are discussed

Radiation and Reliability Concerns for Modern Nonvolatile Memory Technology

Commercial nonvolatile memory technology is attractive for space applications, but radiation issues are serious concerns. In addition, we discuss combined radiation/reliability concerns which are only beginning to be addressed

SEU Analysis of Complex Circuits Implemented in Actel RTAX-S FPGA Devices

No abstract availabl