Storm‐time configuration of the inner magnetosphere: Lyon‐Fedder‐Mobarry MHD code, Tsyganenko model, and GOES observations

[1] We compare global magnetohydrodynamic (MHD) simulation results with an empirical model and observations to understand the magnetic field configuration and plasma distribution in the inner magnetosphere, especially during geomagnetic storms. The physics-based Lyon-Fedder-Mobarry (LFM) code simulates Earth\u27s magnetospheric topology and dynamics by solving the equations of ideal MHD. Quantitative comparisons of simulated events with observations reveal strengths and possible limitations and suggest ways to improve the LFM code. Here we present a case study that compares the LFM code to both a semiempirical magnetic field model and to geosynchronous measurements from GOES satellites. During a magnetic cloud event, the simulation and model predictions compare well qualitatively with observations, except during storm main phase. Quantitative statistical studies of the MHD simulation shows that MHD field lines are consistently under-stretched, especially during storm time (Dst \u3c −20 nT) on the nightside, a likely consequence of an insufficient representation of the inner magnetosphere current systems in ideal MHD. We discuss two approaches for improving the LFM result: increasing the simulation spatial resolution and coupling LFM with a ring current model based on drift physics (i.e., the Rice Convection Model (RCM)). We show that a higher spatial resolution LFM code better predicts geosynchronous magnetic fields (not only the average Bz component but also higher-frequency fluctuations driven by the solar wind). An early version of the LFM/RCM coupled code, which runs so far only for idealized events, yields a much-improved ring current, quantifiable by decreased field strengths at all local times compared to the LFM-only code

Coherence of Spin Qubits in Silicon

Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control of electric fields and charge transport are required. Conventional semiconductor electronics is built upon these capabilities and has demonstrated scaling to large complicated arrays of interconnected devices. However, the requirements for a quantum computer are very different from those for classical computation, and it is not immediately obvious how best to build one in a semiconductor. One possible approach is to use spins as qubits: of nuclei, of electrons, or both in combination. Long qubit coherence times are a prerequisite for quantum computing, and in this paper we will discuss measurements of spin coherence in silicon. The results are encouraging - both electrons bound to donors and the donor nuclei exhibit low decoherence under the right circumstances. Doped silicon thus appears to pass the first test on the road to a quantum computer.Comment: Submitted to J Cond Matter on Nov 15th, 200

Predicting magnetopause crossings at geosynchronous orbit during the Halloween storms

[1] In late October and early November of 2003, the Sun unleashed a powerful series of events known as the Halloween storms. The coronal mass ejections launched by the Sun produced several severe compressions of the magnetosphere that moved the magnetopause inside of geosynchronous orbit. Such events are of interest to satellite operators, and the ability to predict magnetopause crossings along a given orbit is an important space weather capability. In this paper we compare geosynchronous observations of magnetopause crossings during the Halloween storms to crossings determined from the Lyon-Fedder-Mobarry global magnetohydrodynamic simulation of the magnetosphere as well to predictions of several empirical models of the magnetopause position. We calculate basic statistical information about the predictions as well as several standard skill scores. We find that the current Lyon-Fedder-Mobarry simulation of the storm provides a slightly better prediction of the magnetopause position than the empirical models we examined for the extreme conditions present in this study. While this is not surprising, given that conditions during the Halloween storms were well outside the parameter space of the empirical models, it does point out the need for physics-based models that can predict the effects of the most extreme events that are of significant interest to users of space weather forecasts

Stark shift and field ionization of arsenic donors in 28^{28}Si-SOI structures

We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to $\sim$ 2 V/$\mu$m to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the $^{28}$Si SOI layer and find a contact hyperfine Stark parameter of $\eta_a=-1.9\pm0.2\times10^{-3} \mu$m$^2$/V$^2$. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.Comment: 5 pages, 3 figure

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.Comment: 4 pages, 4 figure

Host isotope mass effects on the hyperfine interaction of group-V donors in silicon

The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si-28, Si-29, and Si-30. Further investigation with P-31 donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass.Comment: 5 pages, 4 figures, 1 tabl