1,968 research outputs found

    Negative capacitance in organic semiconductor devices: bipolar injection and charge recombination mechanism

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    We report negative capacitance at low frequencies in organic semiconductor based diodes and show that it appears only under bipolar injection conditions. We account quantitatively for this phenomenon by the recombination current due to electron-hole annihilation. Simple addition of the recombination current to the well established model of space charge limited current in the presence of traps, yields excellent fits to the experimentally measured admittance data. The dependence of the extracted characteristic recombination time on the bias voltage is indicative of a recombination process which is mediated by localized traps.Comment: 3 pages, 3 figures, accepted for publication in Applied Physics Letter

    Intravascular coagulation resulting from intravenous injection of C. parvum in mice.

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    In mice, i.v. C. parvum induces intravascular coagulation. This is a prolonged reaction lasting up to 7 days. It results in thrombosis in hepatic vessels with consequent hepatic necrosis, and thrombosis in pulmonary and splenic vessels. This may be important in the assessment of the tumour-inhibitory activity of C. parvum

    Bias-Dependent Generation and Quenching of Defects in Pentacene

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    We describe a defect in pentacene single crystals that is created by bias stress and persists at room temperature for an hour in the dark but only seconds with 420nm illumination. The defect gives rise to a hole trap at Ev + 0.38eV and causes metastable transport effects at room temperature. Creation and decay rates of the hole trap have a 0.67eV activation energy with a small (108 s-1) prefactor, suggesting that atomic motion plays a key role in the generation and quenching process.Comment: 10 pages, 3 figure

    Bipolar-Driven Large Magnetoresistance in Silicon

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    Large linear magnetoresistance (MR) in electron-injected p-type silicon at very low magnetic field is observed experimentally at room temperature. The large linear MR is induced in electron-dominated space-charge transport regime, where the magnetic field modulation of electron-to-hole density ratio controls the MR, as indicated by the magnetic field dependence of Hall coefficient in the silicon device. Contrary to the space-charge-induced MR effect in unipolar silicon device, where the large linear MR is inhomogeneity-induced, our results provide a different insight into the mechanism of large linear MR in non-magnetic semiconductors that is not based on the inhomogeneity model. This approach enables homogeneous semiconductors to exhibit large linear MR at low magnetic fields that until now has only been appearing in semiconductors with strong inhomogeneities.Comment: 23 pages, 4 figures (main text), 6 figures (supplemental material

    Publisher's Note: "Solution processed multilayer polymer light-emitting diodes based on different molecular weight host" (vol 109, 074516, 2011)

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    Solution processed multilayer polymer light-emitting diodes (PLEDs) based on different molecular weight host have been investigated. A PLED based on high molecular weight poly (vinyl carbazole) PVKH and low molecular weight poly (vinyl carbazole) PVKL, doped with iridium, tris(2-phenylpyidine) Ir(ppy)3 as a host-guest emitting layer (EML), shows a dramatic increase in device efficiency. When the PVKH was used as a hole transport electron blocking layer (HT-EBL), effective electron blocking was achieved, which leads to an increase exciton population in the phosphorescent zone. The use of low molecular weight PVKL as a host material in the top layer prevents barrier formation for hole transport from the poly(3,4-ethylenedioxy-thiophene) (PEDOT)–EBL to the EML. External quantum efficiency of 11%, current efficiencies of 38 cd/A, power efficiency of 13 lm/W and brightness of 7000 cd/m2, were obtained. The effect of the PVKH layer on the electrical and optical device characteristics was investigated. Simulation of the optical outcoupling using SETFOS 3.1 software is in agreed with the observed results and allowed us to predict the emissive dipole location and distribution in the EML layer. The effect of the PVKH on the exciton quenching by the electrodes was also investigated using time resolved fluorescence photon counting, which indicates weak exciton quenching by the PEDOT layer and the device enhancement predominantly achieved by exciton confinement in the emissive layer

    Bisphenol A Binds to the Local Anesthetic Receptor Site to Block the Human Cardiac Sodium Channel

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    Bisphenol A (BPA) has attracted considerable public attention as it leaches from plastic used in food containers, is detectable in human fluids and recent epidemiologic studies link BPA exposure with diseases including cardiovascular disorders. As heart-toxicity may derive from modified cardiac electrophysiology, we investigated the interaction between BPA and hNav1.5, the predominant voltage-gated sodium channel subtype expressed in the human heart. Electrophysiology studies of heterologously-expressed hNav1.5 determined that BPA blocks the channel with a Kd of 25.4±1.3 µM. By comparing the effects of BPA and the local anesthetic mexiletine on wild type hNav1.5 and the F1760A mutant, we demonstrate that both compounds share an overlapping binding site. With a key binding determinant thus identified, an homology model of hNav1.5 was generated based on the recently-reported crystal structure of the bacterial voltage-gated sodium channel NavAb. Docking predictions position both ligands in a cavity delimited by F1760 and contiguous with the DIII–IV pore fenestration. Steered molecular dynamics simulations used to assess routes of ligand ingress indicate that the DIII–IV pore fenestration is a viable access pathway. Therefore BPA block of the human heart sodium channel involves the local anesthetic receptor and both BPA and mexiletine may enter the closed-state pore via membrane-located side fenestrations

    Production Mechanism for Quark Gluon Plasma in Heavy Ion Collisions

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    A general scheme is proposed here to describe the production of semi soft and soft quarks and gluons that form the bulk of the plasma in ultra relativistic heavy ion collisions. We show how to obtain rates as a function of time in a self consistent manner, without any ad-hoc assumption. All the required features - the dynamical nature of QCD vacuum, the non-Markovian nature of the production, and quasi particle nature of the partons, and the importance of quantum interference effects are naturally incorporated. We illustrate the results with a realistic albeit toy model and show how almost all the currently employed source terms are unreliable in their predictions. We show the rates in the momentum space and indicate at the end how to extract the full phase-space dependence.Comment: 4 pages, 4 figures, two colum
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