14 research outputs found

    Evidence of a cubic iron sub-lattice in t-CuFe2O4 demonstrated by X-ray Absorption Fine Structure

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    Copper ferrite, belonging to the wide and technologically relevant class of spinel ferrites, was grown in the form of t-CuFe2O4 nanocrystals within a porous matrix of silica in the form of either an aerogel or a xerogel, and com-pared to a bulk sample. Extended X-ray absorption fine structure (EXAFS) spectroscopy revealed the presence of two different sub-lattices within the crystal structure of t-CuFe2O4, one tetragonal and one cubic, defined by the Cu2+ and Fe3+ ions respectively. Our investigation provides evidence that the Jahn-Teller distortion, which occurs on the Cu2+ ions located in octahedral sites, does not affect the coordination geometry of the Fe3+ ions, regardless of their location in octahedral or tetrahedral sites

    Coherent-potential-approximation study of excitonic absorption in orientationally disordered molecular aggregates

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    We study the dynamics of a single Frenkel exciton in a disordered molecular chain. The coherent-potential approximation is applied to the situation where the single-molecule excitation energies as well as the transition dipole moments, both their absolute values and orientations, are random. Such a model is believed to be relevant for the description of the linear optical properties of one-dimensional J aggregates. We calculate the exciton density of states, the linear absorption spectra, and the exciton coherence length which reveals itself in the linear optics. A detailed analysis of the low-disorder limit of the theory is presented. In particular, we derive asymptotic formulas relating the absorption linewidth and the exciton coherence length to the strength of disorder. Such expressions account simultaneously for all the above types of disorders and reduce to well-established form when no disorder in the transition dipoles is present. The theory is applied to the case of purely orientational disorder and is shown to agree well with exact numerical diagonalization

    Two-Barrier model for Description of Charge Carriers Transport Processes in Structures with Porous Silicon

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