162 research outputs found
Millimeter wave transmission spectroscopy of gated two-dimensional hole systems
We developed a differential transmission to study cyclotron resonance of GaAs/AlxGa1 xAs
two-dimensional hole samples. The technique utilizes a modulated AuPd gate isolated by a Si3N4
dielectric from the sample, which is irradiated opposite the gate by millimeter waves ranging from
2 to 40GHz. This technique effectively removes the background signal and yields a hole effective
mass of 0:41me with a cyclotron scattering time of 20 ps, consistent with the previous results using
different techniques
Quantum Lifetime of Two-Dimensional Holes
The quantum lifetime of two-dimensional holes in a GaAs/AlGaAs double quantum
well is determined via tunneling spectroscopy. At low temperatures the lifetime
is limited by impurity scattering but at higher temperatures hole-hole Coulomb
scattering dominates. Our results are consistent with Fermi liquid theory, at
least up to r_s = 11. At the highest temperatures the measured width of the
hole spectral function becomes comparable to the Fermi energy. A new,
tunneling-spectroscopic, method for determining the in-plane effective mass of
the holes is also demonstrated.Comment: 5 pages, 4 figures. Published versio
Strongly Anisotropic Transport in Higher Two-Dimensional Landau Levels
Low-temperature, electronic transport in Landau levels N>1 of a
two-dimensional electron system is strongly anisotropic. At half-filling of
either spin level of each such Landau level the magnetoresistance either
collapses to form a deep minimum or is peaked in a sharp maximum, depending on
the in-plane current direction. Such anisotropies are absent in the N=0 and N=1
Landau level, which are dominated by the states of the fractional quantum Hall
effect. The transport anisotropies may be indicative of a new many particle
state, which forms exclusively in higher Landau levels.Comment: 12 pages, 3 Postscript figure
Resistively Detected NMR in Quantum Hall States: Investigation of the anomalous lineshape near
A study of the resistively detected nuclear magnetic resonance (RDNMR)
lineshape in the vicinity of was performed on a high-mobility 2D
electron gas formed in GaAs/AlGaAs. In higher Landau levels, application of an
RF field at the nuclear magnetic resonance frequency coincides with an observed
minimum in the longitudinal resistance, as predicted by the simple hyperfine
interaction picture. Near however, an anomalous dispersive lineshape is
observed where a resistance peak follows the usual minimum. In an effort to
understand the origin of this anomalous peak we have studied the resonance
under various RF and sample conditions. Interestingly, we show that the
lineshape can be completely inverted by simply applying a DC current. We
interpret this as evidence that the minima and maxima in the lineshape
originate from two distinct mechanisms.Comment: 5 pages, 3 figures, EP2DS 17, to be published in Physica
Shifted Landau ladders and low field magneto-oscillations in high-mobility GaAs 2D hole systems
We present well-developed low-field magneto-resistance oscillations originating from zero-field spin splitting (ZFSS) of heavy holes in high mobility GaAs/AlGaAs quantum wells. This low field oscillation is 1/B-periodic and emerges before the onset of Shubnikov–de Haas oscillations. The effect can be explained by resonant scattering between two Landau ladders shifted by the ZFSS gap, which in turn can be measured by comparing with the hole cyclotron energy. A front gate is fabricated to tune the ZFSS and hence the oscillation period
Evidence for 2k_F Electron-Electron Scattering Processes in Coulomb Drag
Measurements and calculations of Coulomb drag between two low density,
closely spaced, two-dimensional electron systems are reported. The
experimentally measured drag exceeds that calculated in the random phase
approximation by a significant, and density dependent, factor. Studies of the
dependence of the measured drag on the difference in density between the two
layers clearly demonstrate that previously ignored q=2k_F scattering processes
can be very important to the drag at low densities and small layer separations.Comment: 5 pages, 5 figure
The microwave induced resistance response of a high mobility 2DEG from the quasi-classical limit to the quantum Hall regime
Microwave induced resistance oscillations (MIROs) were studied experimentally
over a very wide range of frequencies ranging from ~20 GHz up to ~4 THz, and
from the quasi-classical regime to the quantum Hall effect regime. At low
frequencies regular MIROs were observed, with a periodicity determined by the
ratio of the microwave to cyclotron frequencies. For frequencies below 150 GHz
the magnetic field dependence of MIROs waveform is well described by a
simplified version of an existing theoretical model, where the damping is
controlled by the width of the Landau levels. In the THz frequency range MIROs
vanish and only pronounced resistance changes are observed at the cyclotron
resonance. The evolution of MIROs with frequency are presented and discussed.Comment: 4 pages, presented at EP2DS, to be published in Physica
Breakdown of Particle-Hole Symmetry in the Lowest Landau Level Revealed by Tunneling Spectroscopy
Tunneling measurements on 2D electron gases at high magnetic field reveal a
qualitative difference between the two spin sublevels of the lowest Landau
level. While the tunneling current-voltage characteristic at filling factor
is a single peak shifted from zero bias by a Coulomb pseudogap, the
spectrum at shows a well-resolved double peak structure. This
difference is present regardless of whether and occur at
the same or different magnetic fields. No analogous effect is seen at and 7/2 in the first excited Landau level.Comment: 5 pages, 4 figure
Wigner crystalization about =3
We measure a resonance in the frequency dependence of the real diagonal
conductivity, Re[], near integer filling factor, . This
resonance depends strongly on , with peak frequency
GHz at or 2.92 close to integer , but 600 MHz
at or 2.82, the extremes of where the resonance is visible.
The dependence of upon , the density of electrons in the
partially filled level, is discussed and compared with similar measurments by
Chen {\it et al.}\cite{yong} about and 2. We interpret the resonance as
due to a pinned Wigner crystal phase with density about the
state.Comment: for proceedings of EP2DS-15 (Nara) to appear in Physica
Experimental Evidence for a Spin-Polarized Ground State in the \nu=5/2 Fractional Quantum Hall Effect
We study the \nu=5/2 even-denominator fractional quantum Hall effect (FQHE)
over a wide range of magnetic (B) field in a heterojunction insulated gate
field-effect transistor (HIGFET). The electron density can be tuned from n=0 to
7.6 \times 10^{11} cm^{-2} with a peak mobility \mu = 5.5 \times 10^6 cm^2/Vs.
The \nu=5/2 state shows a strong minimum in diagonal resistance and a
developing Hall plateau at magnetic fields as high as 12.6T. The strength of
the energy gap varies smoothly with B-field. We interpret these observations as
strong evidence for a spin-polarized ground state at \nu=5/2.Comment: new references adde
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