Efficient solution of the electric and magnetic current combined-field integral equation with the multilevel fast multipole algorithm and block-diagonal preconditioning

We consider the efficient solution of electromagnetics problems involving dielectric and composite dielectric-metallic structures, formulated with the electric and magnetic current combined-field integral equation (JMCFIE). Dense matrix equations obtained from the discretization of JMCFIE with Rao-Wilton-Glisson functions are solved iteratively, where the matrix-vector multiplications are performed efficiently with the multilevel fast multipole algorithm. JMCFIE usually provides well conditioned matrix equations that are easy to solve iteratively. However, iteration counts and the efficiency of solutions depend on the contrast, i.e., the relative variation of electromagnetic parameters across dielectric interfaces. Owing to the numerical imbalance of off-diagonal matrix partitions, solutions of JMCFIE become difficult with increasing contrast. We present a four-partition block-diagonal preconditioner (4PBDP), which provides efficient solutions of JMCFIE by reducing the number of iterations significantly. 4PBDP is useful, especially when the contrast increases, and the standard block-diagonal preconditioner fails to provide a rapid convergence

Generation of long-living entanglement between two separate atoms

A scheme for non-conditional generation of long-living maximally entangled states between two spatially well separated atoms is proposed. In the scheme, $\Lambda$-type atoms pass a resonator-like equipment of dispersing and absorbing macroscopic bodies giving rise to body-assisted electromagnetic field resonances of well-defined heights and widths. Strong atom-field coupling is combined with weak atom-field coupling to realize entanglement transfer from the dipole-allowed transitions to the dipole-forbidden transitions, thereby the entanglement being preserved when the atoms depart from the bodies and from each other. The theory is applied to the case of the atoms passing by a microsphere.Comment: 13 pages, 5 figure

Cylindrically symmetric, static strings with a cosmological constant in Brans-Dicke theory

The static, cylindrically symmetric vacuum solutions with a cosmological constant in the framework of the Brans-Dicke theory are investigated. Some of these solutions admitting Lorentz boost invariance along the symmetry axis correspond to local, straight cosmic strings with a cosmological constant. Some physical properties of such solutions are studied. These strings apply attractive or repulsive forces on the test particles. A smooth matching is also performed with a recently introduced interior thick string solution with a cosmological constant.Comment: 8 pages, Revtex; Published versio

Ontology-Based Data Access to Big Data

Recent approaches to ontology-based data access (OBDA) have extended the focus from relational database systems to other types of backends such as cluster frameworks in order to cope with the four Vs associated with big data: volume, veracity, variety and velocity (stream processing). The abstraction that an ontology provides is a benefit from the enduser point of view, but it represents a challenge for developers because high-level queries must be transformed into queries executable on the backend level. In this paper, we discuss and evaluate an OBDA system that uses STARQL (Streaming and Temporal ontology Access with a Reasoning-based Query Language), as a high-level query language to access data stored in a SPARK cluster framework. The development of the STARQL-SPARK engine show that there is a need to provide a homogeneous interface to access both static and temporal as well as streaming data because cluster frameworks usually lack such an interface. The experimental evaluation shows that building a scalable OBDA system that runs with SPARK is more than plug-and-play as one needs to know quite well the data formats and the data organisation in the cluster framework

High-field electron transport in doped ZnO

Current-voltage characteristics have been measured for ZnO:Ga and Zn:Sb epitaxial layers with electron densities ranging from 1.4x10(17) cm(-3) to 1.1 x 10(20) cm(-3). Two-terminal samples with coplanar electrodes demonstrate virtually ohmic behavior until thermal effects come into play. Soft damage of the samples takes place at high currents. The threshold power (per electron) for the damage is nearly inversely proportional to the electron density over a wide range of electron densities. Pulsed voltage is applied in order to minimize the thermal effects, and thus an average electric field of 150 kV cm(-1) is reached in some samples subjected to 2 ns voltage pulses. The results are treated in terms of electron drift velocity estimated from the data on current and electron density under the assumption of uniform electric field. The highest velocity of similar to 1.5 x 10(7) cm s(-1) is found at an electric field of similar to 100 kV cm(-1) for the sample with an electron density of 1.4 x 10(17) cm(-3). The nonohmic behavior due to hot-electron effects is weak, and the dependence of the electron drift velocity on the doping resembles the variation of mobility

Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

The band structure, quantum confinement of charge carriers, and their localization affect the optoelectronic properties of compound semiconductor heterostructures and multiple quantum wells (MQWs). We present here the results of a systematic first-principles based density functional theory (DFT) investigation of the dependence of the valence band offsets and band bending in polar and non-polar strain-free and in-plane strained heteroepitaxial In x Ga1- xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with [12¯10]InGaN // [12¯10]GaN and [0001]InGaN // [0001]GaN epitaxial alignments, the valence band offset changes linearly from 0 to 0.57 eV as the In composition is varied from 0 (GaN) to 1 (InN). These offsets are relatively insensitive to the misfit strain between InGaN and GaN. On the other hand, for polar c-plane strain-free heterostructures with [101¯0]InGaN // [101¯0]GaN and [12¯10]InGaN // [12¯10]GaN epitaxial alignments, the valence band offset increases nonlinearly from 0 eV (GaN) to 0.90 eV (InN). This is significantly reduced beyond x ≥ 0.5 by the effect of the equi-biaxial misfit strain. Thus, our results affirm that a combination of mechanical boundary conditions, epitaxial orientation, and variation in In concentration can be used as design parameters to rapidly tailor the band offsets in InGaN/GaN MQWs. Typically, calculations of the built-in electric field in complex semiconductor structures often must rely upon sequential optimization via repeated ab initio simulations. Here, we develop a formalism that augments such first-principles computations by including an electrostatic analysis (ESA) using Maxwell and Poisson\u27s relations, thereby converting laborious DFT calculations into finite difference equations that can be rapidly solved. We use these tools to determine the bound sheet charges and built-in electric fields in polar epitaxial InGaN/GaN MQWs on c-plane GaN substrates for In compositions x = 0.125, 0.25,…, and 0.875. The results of the continuum level ESA are in excellent agreement with those from the atomistic level DFT computations, and are, therefore, extendable to such InGaN/GaN MQWs with an arbitrary In composition

Static Cylindrical Matter Shells

Static cylindrical shells composed of massive particles arising from matching of two different Levi-Civita space-times are studied for the shell satisfying either isotropic or anisotropic equation of state. We find that these solutions satisfy the energy conditions for certain ranges of the parameters.Comment: 9 pages, 3 figures, Latex; Final version, To appear in General Relativity and Gravitatio