Calibration of the Pulsed Electroacoustic Technique in the Presence of Trapped Charge

The influence of pulse voltage on the accuracy of charge density distribution in the pulsed electroacoustic technique (PEA) is discussed. It is shown that significant error can be introduced if a low dc voltage and high pulse voltage are used to calibrate charge density. However, our main focus in the present paper is to deal with one of the practical situations where space charge exists in the material prior to any measurements. The conventional calibration method can no longer be used to calibrate charge density due to the interference by the charge on the electrode induced by space charge. A method has been proposed which is based on two measurements. Firstly, the sample containing charge is measured without any applied voltage. The second measurement is carried out with a small external applied voltage. The applied voltage should be small enough so there is no disturbance of the existing charge in the sample. The difference of the two measurements can be used for calibration. An additional advantage of the proposed method avoids the influence of the pulse voltage on calibration and therefore gives a more accurate representation of space charge. The proposed method has been validated

The transmission or scattering of elastic waves by an inhomogeneity of simple geometry: A comparison of theories

The extended method of equivalent inclusion developed is applied to study the specific wave problems of the transmission of elastic waves in an infinite medium containing a layer of inhomogeneity, and of the scattering of elastic waves in an infinite medium containing a perfect spherical inhomogeneity. The eigenstrains are expanded as a geometric series and the method of integration for the inhomogeneous Helmholtz operator given by Fu and Mura is adopted. The results obtained by using a limited number of terms in the eigenstrain expansion are compared with exact solutions for the layer problem and for a perfect sphere. Two parameters are singled out for this comparison: the ratio of elastic moduli, and the ratio of the mass densities. General trends for three different situations are shown

Behavior of axially loaded circular stainless steel tube confined concrete stub columns

A stainless steel tube confined concrete (SSTCC) stub column is a new form of steel-concrete composite column in which the stainless steel tube without bearing the axial load directly is used to confine the core concrete. It could take the advantages of both the stainless steel tube and the confined concrete columns. This paper presents the experimental investigation of circular SSTCC stub columns subjected to axial load. Meanwhile, comparative tests of the circular concrete-filled stainless steel tubes and circular hollow stainless steel tubes were also conducted. The experimental phenomena of specimens are introduced in detail and the experimental results are analyzed. Through the investigation of axial stress and circumference stress on the stainless steel tube, the interaction behavior between stainless steel tube and core concrete is studied. The experimental results showed that the stainless steel tube provides better confinement to the concrete core, thus results the compressive capacity increased obviously comparing with unconfined concrete. The load-carrying capacity of SSTCC stub columns is higher than that of concrete-filled stainless steel tubes. An equation to calculate the load-carrying capacity of SSTCC stub columns was proposed, the results based on calculation are close to the experimental results

The space group classification of topological band insulators

Topological band insulators (TBIs) are bulk insulating materials which feature topologically protected metallic states on their boundary. The existing classification departs from time-reversal symmetry, but the role of the crystal lattice symmetries in the physics of these topological states remained elusive. Here we provide the classification of TBIs protected not only by time-reversal, but also by crystalline symmetries. We find three broad classes of topological states: (a) Gamma-states robust against general time-reversal invariant perturbations; (b) Translationally-active states protected from elastic scattering, but susceptible to topological crystalline disorder; (c) Valley topological insulators sensitive to the effects of non-topological and crystalline disorder. These three classes give rise to 18 different two-dimensional, and, at least 70 three-dimensional TBIs, opening up a route for the systematic search for new types of TBIs.Comment: Accepted in Nature Physic

Surface States of the Topological Insulator Bi_{1-x}Sb_x

We study the electronic surface states of the semiconducting alloy BiSb. Using a phenomenological tight binding model we show that the Fermi surface of the 111 surface states encloses an odd number of time reversal invariant momenta (TRIM) in the surface Brillouin zone confirming that the alloy is a strong topological insulator. We then develop general arguments which show that spatial symmetries lead to additional topological structure, and further constrain the surface band structure. Inversion symmetric crystals have 8 Z_2 "parity invariants", which include the 4 Z_2 invariants due to time reversal. The extra invariants determine the "surface fermion parity", which specifies which surface TRIM are enclosed by an odd number of electron or hole pockets. We provide a simple proof of this result, which provides a direct link between the surface states and the bulk parity eigenvalues. We then make specific predictions for the surface state structure for several faces of BiSb. We next show that mirror invariant band structures are characterized by an integer "mirror Chern number", n_M. The sign of n_M in the topological insulator phase of BiSb is related to a previously unexplored Z_2 parameter in the L point k.p theory of pure Bi, which we refer to as the "mirror chirality", \eta. The value of \eta predicted by the tight binding model for Bi disagrees with the value predicted by a more fundamental pseudopotential calculation. This explains a subtle disagreement between our tight binding surface state calculation and previous first principles calculations on Bi. This suggests that the tight binding parameters in the Liu Allen model of Bi need to be reconsidered. Implications for existing and future ARPES experiments and spin polarized ARPES experiments will be discussed.Comment: 15 pages, 7 figure