InGaAsSb/GaSb lasers and photodetectors integrated on a silicon-on-insulator waveguide circuit for spectroscopic applications

International audienc

GaSb-based integrated lasers and photodetectors on a silicon-on-insulator waveguide circuit for sensing applications in the shortwave infrared

We report our results on GaSb photodiodes and lasers integrated on a Silicon-On-Insulator waveguide circuit. The photodiodes operate at room temperature with 0.4A/W responsivity for grating-assisted coupling and >1 A/W for an evanescent design. On the other hand, integrated Fabry-Perot lasers operate in continuous wave at room temperature with a threshold current of 49.7mA

Full-field structured-illumination super-resolution X-ray transmission microscopy

Modern transmission X-ray microscopy techniques provide very high resolution at low and medium X-ray energies, but suffer from a limited field-of-view. If sub-micrometre resolution is desired, their field-of-view is typically limited to less than one millimetre. Although the field-of-view increases through combining multiple images from adjacent regions of the specimen, so does the required data acquisition time. Here, we present a method for fast full-field super-resolution transmission microscopy by structured illumination of the specimen. This technique is well-suited even for hard X-ray energies above 30 keV, where efficient optics are hard to obtain. Accordingly, investigation of optically thick specimen becomes possible with our method combining a wide field-of-view spanning multiple millimetres, or even centimetres, with sub-micron resolution and hard X-ray energies