Fertigung laminarer optischer Gitter am HZB

Laminare optische Gitter stellen höchste Anforderungen an die mikrosystemtechnische Fertigung der Mikro und Nano strukturen in Hinsicht auf Präzision und Homogenität. Im Rahmen des EU Projektes Aufbau eines Technologiezent rums für hocheffiziente optische Präzisionsgitter am Helmholtz Zentrum Berlin HZB EFRE Vertrag Nr. 20072013 2 43 [1,2] wurden die für die Herstellung von laminaren und geblazten Gittern notwendigen Anlagen in Betrieb ge nommen. Gleichzeitig wurde mit der Prozessentwicklung begonnen. In diesem Artikel werden die neuesten Prozessergebnisse von durch Laserinterferenzlithographie LIL in Photoresist erzeugter Gitterstrukturen und deren nur wenige Nanometer tiefe Übertragung in Siliziumsubstrate mittels Ionenstrahl ätzen vorgestellt. english version Laminar optical gratings impose highest demands on microsystem technological manufacturing with regard to precision and uniformity. Within the project Installation of a technology centre for highly efficient precision gratings at Helm holtz Zentrum Berlin HZB EFRE Vertrag Nr. 20072013 2 43 [1,2] the necessary systems for the manufacturing of laminar and blazed gratings were taken into operation and process development has started. In this article we present the results of grating structures manufactured with laser interference lithography and subse quent ion beam etchin

Scatterometry reference standards to improve tool matching and traceability in lithographical nanomanufacturing

High quality scatterometry standard samples have been developed to improve the tool matching between different scatterometry methods and tools as well as with high resolution microscopic methods such as scanning electron microscopy or atomic force microscopy and to support traceable and absolute scatterometric critical dimension metrology in lithographic nanomanufacturing. First samples based on one dimensional Si or on Si 3 N 4 grating targets have been manufactured and characterized for this purpose. The etched gratings have periods down to 50 nm and contain areas of reduced density to enable AFM measurements for comparison. Each sample contains additionally at least one large area scatterometry target suitable for grazing incidence small angle X ray scattering. We present the current design and the characterization of structure details and the grating quality based on AFM, optical, EUV and X Ray scatterometry as well as spectroscopic ellipsometry measurements. The final traceable calibration of these standards is currently performed by applying and combining different scatterometric as well as imaging calibration methods. We present first calibration results and discuss the final design and the aimed specifications of the standard samples to face the tough requirements for future technology nodes in lithography

Highly efficient soft X ray spectrometer based on a reflection zone plate for resonant inelastic X ray scattering measurements

We present a newly designed compact and flexible soft X-ray spectrometer for resonant inelastic X-ray scattering (RIXS) studies within an energy range from 380 eV to 410 eV, which would include the K alpha emission lines of vital elements like nitrogen. We utilized an off-axis reflection zone plate (RZP) as the wavelength selective element with a maximum line density of 10000 l/mm. A higher energy resolution over a broader range of +/- 15 eV around the designed energy was achieved by displacing the RZP. Additionally, for the first time, an actual optical side effect, the so-called comatic aberration was exploited to increase the energy resolution. First results show a resolving power in the order of 1300 for photon energy of 395 eV, which is comparable to a commercial varied line spacing grating (VLS)

Gratings for synchrotron and FEL beamlines a project for the manufacture of ultra precise gratings at Helmholtz Zentrum Berlin

Blazed gratings are of dedicated interest for the monochromatization of synchrotron radiation when a high photon flux is required, such as, for example, in resonant inelastic X ray scattering experiments or when the use of laminar gratings is excluded due to too high flux densities and expected damage, for example at free electron laser beamlines. Their availability became a bottleneck since the decommissioning of the grating manufacture facility at Carl Zeiss in Oberkochen. To resolve this situation a new technological laboratory was established at the Helmholtz Zentrum Berlin, including instrumentation from Carl Zeiss. Besides the upgraded ZEISS equipment, an advanced grating production line has been developed, including a new ultra precise ruling machine, ion etching technology as well as laser interference lithography. While the old ZEISS ruling machine GTM 6 allows ruling for a grating length up to 170 mm, the new GTM 24 will have the capacity for 600 mm 24 inch gratings with groove densities between 50 lines mm 1 and 1200 lines mm 1. A new ion etching machine with a scanning radiofrequency excited ion beam HF source allows gratings to be etched into substrates of up to 500 mm length. For a final at wavelength characterization, a new reflectometer at a new Optics beamline at the BESSY II storage ring is under operation. This paper reports on the status of the grating fabrication, the measured quality of fabricated items by ex situ and in situ metrology, and future development goal

X ray absorption spectroscopy using a self seeded soft X ray free electron laser

X ray free electron lasers XFELs enable unprecedented new ways to study the electronic structure and dynamics of transition metal systems. L edge absorption spectroscopy is a powerful technique for such studies and the feasibility of this method at XFELs for solutions and solids has been demonstrated. However, the required x ray bandwidth is an order of magnitude narrower than that of self amplified spontaneous emission SASE , and additional monochromatization is needed. Here we compare L edge x ray absorption spectroscopy XAS of a prototypical transition metal system based on monochromatizing the SASE radiation of the linac coherent light source LCLS with a new technique based on self seeding of LCLS. We demonstrate how L edge XAS can be performed using the self seeding scheme without the need of an additional beam line monochromator. We show how the spectral shape and pulse energy depend on the undulator setup and how this affects the x ray spectroscopy measurement

Soft X Ray Lithography for High Aspect Ratio Sub Micrometer Structures

Soft x ray lithography is a promising micro nano fabrication process for patterning of ultra precise, low and high aspect ratio micro and nanostructures [1 5]. Research presented in this paper builds upon a new negative tone, epoxy based x ray resist, mr X, which offers comparable contrast to PMMA gt; 3 at a factor of 20x higher sensitivity [6]. Using a 1 amp; 956;m thick SiN membrane mask with a 1 amp; 956;m thick Au absorber, patterns were transferred into 10 amp; 956;m thick resist using the soft exposure mode at the BESSY II WLS beamline. With typical exposure times of a few minutes very precise grating and filter structures can be fabricated with dimensions down to about 500nm