2,990 research outputs found

    Study of the Types and Characteristics of Channel Shift of Omni Channel Service

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    Currently, we are living in an age in which the development of IT technology creates value by utilizing Internet and mobile platform. In the past, the consumers had an one-way consumption pattern which purchases after acquiring information via advertisement. And then, as the Internet improves, they have shown the aspect of consuming more actively, by searching and applying a variety of information acquired from Internet. While until then, online and offline belonged to the different area which delivers each different value, however presently, with vitalizing ICT and mobile environment, the boundary has begun to blurred. Accordingly, and a form of Omni Channel service where the physical place and Internet, mobile, the respective platform organically assimilate with each other has been established. Therefore, currently a number of distribution enterprises are providing various mobile-based O2O(Online to Offline) service as one strategy in order to support Omni Channel. In this case, currently a lot of enterprises have faced a problem of how to plan and design channels that support the users in each stage of decision making process for purchase and provide potential consumers with a consistent brand experience. Thus, the study would examine Omni Channel, which is a novel consuming trend, prior to solving the problem, and aims to draw the decision making process for purchase in Omni Channel service environment. On top of that, it would formalize Channel shift types of consumers and figure out their characteristics through customer journey map. Based on them, it aims to examine the characteristics of Omni Channel service by analyzing the cases of Omni Channel service in general. The study is meaningful as a preceding research in that it draws the Omni Channel service design strategy to maximize mobile users' experience in the future

    Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deep-level transient spectroscopy

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    The energy levels of surface states at the surface of GaAs were determined through capacitance deep-level transient spectroscopy of GaAs metal-semiconductor field-effect transistor with large gate periphery. Two types of hole-like traps are observed in the spectra. These originate from the surface states at the ungated regions between gate and source/drain electrodes. The activation energies of both surface states are determined to be 0.65 +/- 0.07 and 0.88 +/- 0.04 eV, which agree well with the energy levels of As-Ga(+) and As-Ga(++) within band gap of GaAs, responsible for the Fermi level pinning at the surface.open151

    Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deep-level transient spectroscopy

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    The energy levels of surface states at the surface of GaAs were determined through capacitance deep-level transient spectroscopy of GaAs metal-semiconductor field-effect transistor with large gate periphery. Two types of hole-like traps are observed in the spectra. These originate from the surface states at the ungated regions between gate and source/drain electrodes. The activation energies of both surface states are determined to be 0.65 +/- 0.07 and 0.88 +/- 0.04 eV, which agree well with the energy levels of As-Ga(+) and As-Ga(++) within band gap of GaAs, responsible for the Fermi level pinning at the surface.open151

    Spin-orbit torques from interfacial spin-orbit coupling for various interfaces

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    We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a dampinglike component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.Comment: 24 pages, 9 figure

    Prediction of Giant Spin Motive Force due to Rashba Spin-Orbit Coupling

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    Magnetization dynamics in a ferromagnet can induce a spin-dependent electric field through spin motive force. Spin current generated by the spin-dependent electric field can in turn modify the magnetization dynamics through spin-transfer torque. While this feedback effect is usually weak and thus ignored, we predict that in Rashba spin-orbit coupling systems with large Rashba parameter αR\alpha_{\rm R}, the coupling generates the spin-dependent electric field [\pm(\alpha_{\rm R}m_e/e\hbar) (\vhat{z}\times \partial \vec{m}/\partial t)], which can be large enough to modify the magnetization dynamics significantly. This effect should be relevant for device applications based on ultrathin magnetic layers with strong Rashba spin-orbit coupling.Comment: 4+ pages, 2 figure
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