Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

We investigated the spontaneous and stimulated emission properties of violet-light-emitting ultrathin In-rich InGaN/GaN multiple quantum wells (MQWs) with indium content of 60%-70%. The Stokes shift was smaller than that of In-poor InGaN MQWs, and the emission peak position at 3.196 eV was kept constant with increasing pumping power, indicating negligible quantum confined Stark effect in ultrathin In-rich InGaN MQWs despite of high indium content. Optically pumped stimulated emission performed at room temperature was observed at 3.21 eV, the high-energy side of spontaneous emission, when the pumping power density exceeds ???31 kW/ cm2.open6

Spontaneous emission enhancement in strain-induced WSe2 monolayer based quantum light sources on metallic surfaces

Atomic monolayers of transition metal dichalcogenides represent an emerging material platform for the implementation of ultra compact quantum light emitters via strain engineering. In this framework, we discuss experimental results on creation of strain induced single photon sources using a WSe2 monolayer on a silver substrate, coated with a very thin dielectric layer. We identify quantum emitters which are formed at various locations in the sample. The emission is highly linearly polarized, stable in linewidth and decay times down to 300 ps are observed. We provide numerical calculations of our monolayer-metal device platform to assess the strength of the radiative decay rate enhancement by the presence of the plasmonic structure. We believe, that our results represent a crucial step towards the ultra-compact integration of high performance single photon sources in nanoplasmonic devices and circuits

Properties of oriented strand board made from Betung bamboo (Dendrocalamus asper (Schultes.f) Backer ex Heyne)

Bamboo has gained increasing attention as an alternative raw material for use in the manufacture of composite boards. Three-layer OSBs were made using Betung bamboo (Dendrocalamus asper (Schultes.f) Backer ex Heyne) strands to evaluate the effects of strand length and pre-treatment techniques on the physical, mechanical, and durability properties. Three different strand lengths, namely 50, 60, and 70 mm, were prepared. Prior to the manufacture into OSB, the strands were immersed in cold water for 24 h and in 6% acetic anhydrides solution for 48 h. The OSBs were fabricated using 5% MDI resin based on the strand dry weight. The results indicated that MOR and MOE values in perpendicular to the grain direction were much influenced by strand length. The dimensional stability of OSB was slightly improved by immersing the strands in acetic anhydride solution. Immersing strands in cold water and acetic anhydride solution improved the resistance of OSB against subterranean termite (Macrotermes gylvus) attack under the adopted experimental condition. All OSB parameters manufactured in this experiment were better than the minimum requirement of CSA 0437.0 (Grade O–2) standard

Position and Thickness Optimization of Ribs for Ventilation Covering Using the Micro Genetic Algorithm with an Interpolated Smooth Objective Function

Structures with supporting ribs are adopted in many fields of engineering. These ribs are attached to the main plate or shell to increase stiffness and reduce the stresses of a structure. Currently, much research in structural optimization has been devoted to size or thickness optimizations. In this study, the discrete positions of the ribs of a structure are optimized in addition to their thicknesses. The objective function, which is the total weight of a structure, is a continuous function with respect to the thickness of the ribs. However, it is a stepwise function of a dimensionless variable, which represents the set of positions of the ribs. Because of this stepwise objective function, the gradient method of optimization is not applicable. Therefore, we applied the micro genetic algorithm (MGA), which does not need derivatives of the objective function. To accelerate the rate of convergence, the stepwise objective function is interpolated to a smooth artificial objective function that does not alter the optimal solution

A Giant Maxillary Mucocele Presenting Left Cheek Swelling

A paranasal sinus mucocele is an epithelial-lined, mucus-containing sac that completely fills the sinus and forms an expandable cystic structure. It most commonly affects the frontal and ethmoidal sinuses, and rarely the maxillary and sphenoid sinuses. Orbital displacement or external disfigurement resulting from the expansion of the frontal or ethmoid sinuses is common; however, facial asymmetry caused by maxillary bone remodeling is rare. We describe a case of large maxillary sinus mucocele that destroyed the maxillary sinus bony wall, resulting in notable left cheek swelling and disfigurement, and review the relevant literature

Evaluation of genetic diversity and linkage disequilibrium in Korean-bred rice varieties using SSR markers

Background: In order to evaluate the variation among different rice types, the genetic diversity in a rice collection composed by 59 breeding lines, 23 landraces, 18 weedy rice lines, and 35 introduced lines that collected from countries worldwide was analyzed using 134 simple sequence repeat markers. Results: In total, 1264 alleles were identified (average, 9.43 per locus). Rare alleles made up a large portion (58.4%) of the detected alleles, and 29 unique alleles associated with rice accessions were also discovered. A model-based structural analysis revealed the presence of three subpopulations. The genetic relationships revealed by the neighbour-joining tree method were fairly consistent with the structure-based membership assignments for most of the accessions. A total of 105 accessions (79.5%) showed a clear relationship to each cluster, while the remaining 27 accessions (20.5%) were categorized as admixtures. Linkage disequilibrium (LD) patterns and distributions are of fundamental importance for genome-wide association mapping. The mean r2 value for all intrachromosomal loci pairs was 0.1286. The LD between linked markers decreased with the genetic distance between pairs of linked loci. Conclusions: These results will provide an effective aid for future allele mining, association genetics, mapping and cloning gene(s), germplasm conservation, and improvement programs

Rim 2/Hipa CACTA transposon display ; A new genetic marker technique in Oryza species

BACKGROUND: Transposons constitute the major fractions of repetitive sequences in eukaryotes, and have been crucial in the shaping of current genomes. Transposons are generally divided into two classes according to the mechanism underlying their transposition: RNA intermediate class 1 and DNA intermediate class 2. CACTA is a class 2 transposon superfamily, which is found exclusively in plants. As some transposons, including the CACTA superfamily, are highly abundant in plant species, and their nucleotide sequences are highly conserved within a family, they can be utilized as genetic markers, using a slightly modified version of the conventional AFLP protocol. Rim2 /Hipa is a CACTA transposon family having 16 bp consensus TIR sequences to be present in high copy numbers in rice genome. This research was carried out in order to develop a Rim2/Hipa CACTA-AFLP or Rim2/Hipa CACTA-TD (transposon display, hereafter Rim2/Hipa-TD) protocol for the study of genetic markers in map construction and the study of genetic diversity in rice. RESULTS: Rim2/Hipa-TD generated ample polymorphic profiles among the different rice accessions, and the amplification profiles were highly reproducible between different thermocyclers and Taq polymerases. These amplification profiles allowed for clear distinction between two different ecotypes, Japonica and Indica, of Oryza sativa. In the analysis of RIL populations, the Rim2/Hipa-TD markers were found to be segregated largely in a dominant manner, although in a few cases, non-parental bands were observed in the segregating populations. Upon linkage analysis, the Rim2/Hipa-TD markers were found to be distributed in the regions proximal to the centromeres of the chromosomes. The distribution of the Rim2/Hipa CACTA elements was surveyed in 15 different Oryza species via Rim2/Hipa-TD. While Rim2/Hipa-TD yielded ample amplification profiles between 100 to 700 bp in the AA diploid Oryza species, other species having BB, CC, EE, BBCC and CCDD, profiles demonstrated that most of the amplified fragments were larger than 400 bp, and that our methods were insufficient to clearly distinguish between these fragments. However, the overall amplification profiles between species in the Oryza genus were fully distinct. Phenetic relationships among the AA diploid Oryza species, as evidenced by the Rim2/Hipa-TD markers, were matched with their geographical distributions. CONCLUSION: The abundance of the Rim2/Hipa TIR sequences is very informative since the Rim2/Hipa-TD produced high polymorphic profiles with ample reproducibility within a species as well as between species in the Oryza genus. Therefore, Rim2/Hipa-TD markers can be useful in the development of high-density of genetic map around the centromeric regions. Rim2/Hipa-TD may also prove useful in evaluations of genetic variation and species relationships in the Oryza species

In-rich InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition

Growth mechanism of In-rich InGaN/GaN quantum wells (QWs) was investigated. First, we examined the initial stage of InN growth on GaN template considering strain-relieving mechanisms such as defect generation, islanding, and alloy formation at 730 degrees C. It was found that, instead of formation of InN layer, defective In-rich InGaN layer with thickness fluctuations was formed to relieve large lattice mismatch over 10% between InN and GaN. By introducing growth interruption (GI) before GaN capping at the same temperature, however, atomically flat InGaN/GaN interfaces were observed, and the quality of In-rich InGaN layer was greatly improved. We found that decomposition and mass transport processes during GI in InGaN layer are responsible for this phenomenon. There exists severe decomposition in InGaN layer during GI, and a 1-nm-thick InGaN layer remained after GI due to stronger bond strength near the InGaN/GaN interface. It was observed that the mass transport processes actively occurred during GI in InGaN layer above 730 degrees C so that defect annihilation in InGaN layer was greatly enhanced. Finally, based on these experimental results, we propose the growth mechanism of In-rich InGaN/GaN QWs using GI.open9