17 research outputs found
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III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template.
Silicon photonics is becoming a mainstream data-transmission solution for next-generation data centers, high-performance computers, and many emerging applications. The inefficiency of light emission in silicon still requires the integration of a III/V laser chip or optical gain materials onto a silicon substrate. A number of integration approaches, including flip-chip bonding, molecule or polymer wafer bonding, and monolithic III/V epitaxy, have been extensively explored in the past decade. Here, we demonstrate a novel photonic integration method of epitaxial regrowth of III/V on a III/V-on-SOI bonding template to realize heterogeneous lasers on silicon. This method decouples the correlated root causes, i.e., lattice, thermal, and domain mismatches, which are all responsible for a large number of detrimental dislocations in the heteroepitaxy process. The grown multi-quantum well vertical p-i-n diode laser structure shows a significantly low dislocation density of 9.5 × 104 cm-2, two orders of magnitude lower than the state-of-the-art conventional monolithic growth on Si. This low dislocation density would eliminate defect-induced laser lifetime concerns for practical applications. The fabricated lasers show room-temperature pulsed and continuous-wave lasing at 1.31 μm, with a minimal threshold current density of 813 A/cm2. This generic concept can be applied to other material systems to provide higher integration density, more functionalities and lower total cost for photonics as well as microelectronics, MEMS, and many other applications
Optical Injection-locked High-speed Heterogeneous Quantum-dot Microring Lasers
We demonstrate < 6× modulation bandwidth extension of a heterogeneous quantum-dot microring laser using optical injection locking, obtaining 18 Gb/s on-off-keying modulation with clear open eyes. Single-mode lasing of all 11 longitudinal modes were achieved with <44 dB side-mode suppression and minimal 5 dB power increase
Heterogeneous Multi-wavelength Optical Injection Locked System-on-chip: a Proposal & Proof-of-concept Experiment
We present proof-of-concept work towards an integrated multi-λ optical injection locked system-on-chip using just one master laser. Tremendous improvement of direct modulation (4→20 Gb/s) and single-mode operation on slave microring laser was achieved
Non-volatile heterogeneous III-V/Si photonics via optical charge-trap memory
We demonstrate, for the first time, non-volatile charge-trap flash memory
(CTM) co-located with heterogeneous III-V/Si photonics. The wafer-bonded
III-V/Si CTM cell facilitates non-volatile optical functionality for a variety
of devices such as Mach-Zehnder Interferometers (MZIs), asymmetric MZI lattice
filters, and ring resonator filters. The MZI CTM exhibits full write/erase
operation (100 cycles with 500 states) with wavelength shifts of
() and a dynamic power consumption 20 pW (limited by
measurement). Multi-bit write operation (2 bits) is also demonstrated and
verified over a time duration of 24 hours and most likely beyond. The cascaded
2nd order ring resonator CTM filter exhibited an improved ER of ~ 7.11 dB
compared to the MZI and wavelength shifts of () with similar
pW-level dynamic power consumption as the MZI CTM. The ability to co-locate
photonic computing elements and non-volatile memory provides an attractive path
towards eliminating the von-Neumann bottleneck
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Characterization of Insertion Loss and Back Reflection in Passive Hybrid Silicon Tapers
Heterogeneous Multi-wavelength Optical Injection Locked System-on-chip: a Proposal & Proof-of-concept Experiment
We present proof-of-concept work towards an integrated multi-λ optical injection locked system-on-chip using just one master laser. Tremendous improvement of direct modulation (4→20 Gb/s) and single-mode operation on slave microring laser was achieved
Recommended from our members
III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template.
Silicon photonics is becoming a mainstream data-transmission solution for next-generation data centers, high-performance computers, and many emerging applications. The inefficiency of light emission in silicon still requires the integration of a III/V laser chip or optical gain materials onto a silicon substrate. A number of integration approaches, including flip-chip bonding, molecule or polymer wafer bonding, and monolithic III/V epitaxy, have been extensively explored in the past decade. Here, we demonstrate a novel photonic integration method of epitaxial regrowth of III/V on a III/V-on-SOI bonding template to realize heterogeneous lasers on silicon. This method decouples the correlated root causes, i.e., lattice, thermal, and domain mismatches, which are all responsible for a large number of detrimental dislocations in the heteroepitaxy process. The grown multi-quantum well vertical p-i-n diode laser structure shows a significantly low dislocation density of 9.5 × 104 cm-2, two orders of magnitude lower than the state-of-the-art conventional monolithic growth on Si. This low dislocation density would eliminate defect-induced laser lifetime concerns for practical applications. The fabricated lasers show room-temperature pulsed and continuous-wave lasing at 1.31 μm, with a minimal threshold current density of 813 A/cm2. This generic concept can be applied to other material systems to provide higher integration density, more functionalities and lower total cost for photonics as well as microelectronics, MEMS, and many other applications