GROWTH OF InAsxSb1-x LAYERS ON GaAs SUBSTRATES BY HOT WALL EPITAXY

We have studied the structural and electrical characteristics of InAsSb ternary layers grown on GaAs (001) substrates by hot wall epitaxy (HWE) at arsenic (As) reservoir temperature in the range from 220 to 290 °C. The growth rate of the epilayer is found to be decreased with increasing As temperature. This is attributed to the abundance of group V molecules to the growth surface, which suppresses the mass transport of Indium (In) atoms. A dramatic change in the surface morphologies of the samples has been observed by scanning electron microscopy. X-ray diffraction studies indicate that the arsenic composition of the layer can be controlled by manipulating As temperature. Hall effect results of the samples show that the electron mobility of the layer decreases with increasing As temperature

A vantagem do mando de campo no futebol: diferenças entres os clubes e o efeito da distância viajada para o Campeonato Brasileiro

Este trabalho analisa a correlação da distância percorrida pelo clube visitante e a diferença de habilidade entre as equipes com o resultado da partida. Para realizar isso, foram selecionados os jogos de 2013 a 2017 do Campeonato Brasileiro da Série A. Depois, quantificou-se a vantagem em casa após controlar a habilidade dos times e, então, comparou-se o desempenho de cada clube. Por último, foi feito um logit ordinal com o placar como variável dependente e a distância e a diferença de habilidade como variável explicativa. Concluiu-se que existem diferenças no desempenho na vantagem em casa entre as equipes de diferentes regiões, sendo que os times do sul possuem maior vantagem. Também foi encontrado que o efeito da viagem não foi significativo, deixando apenas a influência da diferença  de habilidade para explicar o resultado.

Horizontal travelling heater method growth of Hg1−xCdxTe with crucible rotation

A horizontal travelling heater method (THM) for growing cylindrical cyrstals from a partially filled solution zone has been investigated for the first time. By applying ampoule rotation, the whole cross section of the crystal is successively brought into contact with the liquid solution, which is effectively stirred by forced convection. This approach was used to grow single-crystalline Hg1−xCdxTe ingots from a Te-rich solution zone. The structural perfection and metallurgical homogeneity are equivalent to vertically-grown THM material

STERNOCLAVICULAR JOINT MOVEMENT DURING BACKSWING IN BASEBALL PITCHING MAY BE A GOOD INDICATOR OF SHOULDER INJURY

The purpose of this study was to demonstrate the characteristics of joint movements performed by the pitchers who suffered from throwing shoulder injuries. Fourteen semiprofessional baseball pitchers participated in our longitudinal study. We captured their pitching using an optical motion capture system. We investigated their disease history once a year, for 5 years, in order to investigate the relationship between baseball-related throwing injuries and pitching mechanics. T w of the players suffered from shoulder pain and had to take a "no throw" rest for several weeks during the season. Both pitchers had a reduced range of motions for retraction at the sternoclavicular joint during backswing. However, they presented the same range of motions for shoulder horizontal abduction, as the other healthy pitchers

GRAVITATIONAL EFFECT ON GROWTH OF InX Ga1-XSb TERNARY BULK CRYSTALS

The effect of gravity on dissolution of GaSb in InSb melt and growth of InGaSb was experimentally investigated using GaSb(seed)/InSb/GaSb(feed) sandwich samples. Two parameters were considered: (1) the inclination angle of the sample for gravity as 0°, 53° and 90°, (2) the sample diameter (D) as 9 mm and 5mm. When θ =0°, the interface was almost flat whereas the interfaces were strongly distorted when θ = 53° and 90°. The undissolved GaSb(feed) remained for \theta = 0 °. However, it dissolved completely for θ = 90°, and partially for θ = 53°. As the gravitational angle was increased, the growth length of uniform composition became long. The decrease of sample diameter reduced the dissolution area of GaSb. These facts indicated that the dissolution and growth processes were strongly influenced by gravity

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl2, which is the predominant growth species in chlorinated chemistries. A specular surface morphology was attained by limiting the hydrogen etch rate until the system was equilibrated at the desired growth temperature. The RMS roughness of the grown films ranged from 0.5-2.0 nm with very few morphological defects (carrots, triangular defects, etc.) being introduced, while enabling growth rates of 30-100 \mum/hr, 5-15 times higher than most conventional growths. Site-competition epitaxy was observed over a wide range of C/Si ratios, with doping concentrations < 1x1014 cm-3 being recorded. X-ray rocking curves indicated that the epilayers were of high crystallinity, with linewidths as narrow as 7.8 arcsec being observed, while microwave photoconductive decay (\muPCD) measurements indicated that these films had high injection (ambipolar) carrier lifetimes in the range of 2 \mus

SHRSP.Z-Leprfa/IzmDmcr rats における24 時間血圧概日リズムの週齢変化についての基礎的検討

Twenty-four hour ambulatory blood pressure monitoring has focused on the incidence of hypertension-related end organ damage. This study intends to measure 24-hour blood pressure in SHRSP.Z-Leprfa/IzmDmcr rats（SHRSPZF）at the age of 12 and 20 weeks. This 24-hour blood pressure monitoring was conducted using a telemetry system. Each rat at 12 and 20 weeks of age was used for 24-hour blood pressure monitoring for 7 days. Twenty-four-hour systolic and diastolic blood pressures in 20-week-old SHRSPZF was significantly higher than in 12-week-old SHRSPZF, but the heart rate did not change between them. Systolic blood pressure standard deviation as a marker of short-term blood pressure variability in 20-week-old SHRSPZF was significantly increased than in 12-week-old SHRSPZF during night and day time. From these results, the short-term blood pressure variability in 24-hour ambulatory blood pressure of 20-week-old SHRSPZF was significantly higher than those in 12-week-old SHRSPZF possibly due to marked hypertension. The development of renal damage in SHRSPZF may be related to this short-term blood pressure variability change in SHRSPZF at the age of 20 weeks

Comparison of ground reaction force between counter movement jump and depth jump

J-GLOBAL ID : 202001020973622576J-GLOBAL ID : 201401079533207271J-GLOBAL ID : 202101011515064120J-GLOBAL ID : 2017010054452656271520578603921103232application/pdfdepartmental bulletin pape