Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices

We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 G{\Omega}, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a fully CMOS process for single electron device fabrication.Comment: 7 pages, 7 figure

Strain sensing with sub-micron sized Al-AlOx-Al tunnel junctions

We demonstrate a local strain sensing method for nanostructures based on metallic Al tunnel junctions with AlOx barriers. The junctions were fabricated on top of a thin silicon nitride membrane, which was actuated with an AFM tip attached to a stiff cantilever. A large relative change in the tunneling resistance in response to the applied strain (gauge factor) was observed, up to a value 37. This facilitates local static strain variation measurements down to ~10^{-7}.Comment: 4 pages, 3 figure

The Hopf modules category and the Hopf equation

We study the Hopf equation which is equivalent to the pentagonal equation, from operator algebras. A FRT type theorem is given and new types of quantum groups are constructed. The key role is played now by the classical Hopf modules category. As an application, a five dimensional noncommutative noncocommutative bialgebra is given.Comment: 30 pages, Letax2e, Comm. Algebra in pres

Dipper-Donkin algebra as global symmetry of quantum chains

We analize the role of GL_2, a quantum group constructed by Dipper-Donkin, as a global symmetry for quantum chains, and show the way to construct all possible Hamiltonians for four states quantum chains with GL_2 global symmetry. In doing this, we search all inner actions of GL_2 on the Clifford algebra C(1,3) and show them. We also introduce the corresponding operator algebras, invariants and Hamiltonians, explicitly.Comment: 30 pages, 3 Figures, LaTex2

Positive Selection in East Asians for an EDAR Allele that Enhances NF-κB Activation

Genome-wide scans for positive selection in humans provide a promising approach to establish links between genetic variants and adaptive phenotypes. From this approach, lists of hundreds of candidate genomic regions for positive selection have been assembled. These candidate regions are expected to contain variants that contribute to adaptive phenotypes, but few of these regions have been associated with phenotypic effects. Here we present evidence that a derived nonsynonymous substitution (370A) in EDAR, a gene involved in ectodermal development, was driven to high frequency in East Asia by positive selection prior to 10,000 years ago. With an in vitro transfection assay, we demonstrate that 370A enhances NF-κB activity. Our results suggest that 370A is a positively selected functional genetic variant that underlies an adaptive human phenotype