Static muscle strength trained and untrained of female students

Static muscle strength is one of the defining characteristics of human motor potential. Standard terms and exclude the impact of short-term measurement techniques for motion and strain measurements, hence the widespread use of Mm measurements in the assessment of fitness of both trained and untrained, healthy subjects and patients undergoing a variety of reasons the process of rehabilitation. The paper deals with static muscle strength (dynamometry back of the hand) of female students trained (n = 38) and untrained (n = 213). Examined relationships between individual measurements and body weight in both groups, the degree of asymmetry of the palmar and the differences in the level of power (at the level of the absolute and relative terms) between the groups. Disclosed according to form the basis of their conclusions

Rapid and Accurate C-V Measurements

We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100-MHz applied sine wave, which swings from accumulation to strong inversion, is digitized directly using an oscilloscope from the MOS capacitor under test. A C-V curve can be constructed directly from this data but is severely distorted due to nonideal behavior of real measurement systems. The key advance of this paper is to extract the system response function using the same measurement setup and a known MOS capacitor. The system response correction to the measured C-V curve of the unknown MOS capacitor can then be done by simple deconvolution. No deskewing and/or leakage current correction is necessary, making it a very simple and quick measurement. Excellent agreement between the new fast C-V method and C-V measured conventionally by an LCR meter is achieved. The total time required for measurement and analysis is approximately 2 s, which is limited by our equipment

Influence of Metal–MoS₂ Interface on MoS₂ Transistor Performance: Comparison of Ag and Ti Contacts

In this work, we compare the electrical characteristics of MoS₂ field-effect transistors (FETs) with Ag source/drain contacts with those with Ti and demonstrate that the metal–MoS₂ interface is crucial to the device performance. MoS₂ FETs with Ag contacts show more than 60 times higher ON-state current than those with Ti contacts. In order to better understand the mechanism of the better performance with Ag contacts, 5 nm Au/5 nm Ag (contact layer) or 5 nm Au/5 nm Ti film was deposited onto MoS₂ monolayers and few layers, and the topography of metal films was characterized using scanning electron microscopy and atomic force microscopy. The surface morphology shows that, while there exist pinholes in Au/Ti film on MoS₂, Au/Ag forms a smoother and denser film. Raman spectroscopy was carried out to investigate the metal–MoS₂ interface. The Raman spectra from MoS₂ covered with Au/Ag or Au/Ti film reveal that Ag or Ti is in direct contact with MoS₂. Our findings show that the smoother and denser Au/Ag contacts lead to higher carrier transport efficiency