26 research outputs found
Static muscle strength trained and untrained of female students
Static muscle strength is one of the defining characteristics of human motor potential. Standard terms and exclude the impact of short-term measurement techniques for motion and strain measurements, hence the widespread use of Mm measurements in the assessment of fitness of both trained and untrained, healthy subjects and patients undergoing a variety of reasons the process of rehabilitation. The paper deals with static muscle strength (dynamometry back of the hand) of female students trained (n = 38) and untrained (n = 213). Examined relationships between individual measurements and body weight in both groups, the degree of asymmetry of the palmar and the differences in the level of power (at the level of the absolute and relative terms) between the groups. Disclosed according to form the basis of their conclusions
Rapid and Accurate C-V Measurements
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100-MHz applied sine wave, which swings from accumulation to strong inversion, is digitized directly using an oscilloscope from the MOS capacitor under test. A C-V curve can be constructed directly from this data but is severely distorted due to nonideal behavior of real measurement systems. The key advance of this paper is to extract the system response function using the same measurement setup and a known MOS capacitor. The system response correction to the measured C-V curve of the unknown MOS capacitor can then be done by simple deconvolution. No deskewing and/or leakage current correction is necessary, making it a very simple and quick measurement. Excellent agreement between the new fast C-V method and C-V measured conventionally by an LCR meter is achieved. The total time required for measurement and analysis is approximately 2 s, which is limited by our equipment
Verification of the Relation Between TwoâProbe and FourâProbe Resistances as Measured on Silicon Wafers
Influence of MetalâMoS<sub>2</sub> Interface on MoS<sub>2</sub> Transistor Performance: Comparison of Ag and Ti Contacts
In this work, we compare the electrical
characteristics of MoS<sub>2</sub> field-effect transistors (FETs)
with Ag source/drain contacts
with those with Ti and demonstrate that the metalâMoS<sub>2</sub> interface is crucial to the device performance. MoS<sub>2</sub> FETs
with Ag contacts show more than 60 times higher ON-state current than
those with Ti contacts. In order to better understand the mechanism
of the better performance with Ag contacts, 5 nm Au/5 nm Ag (contact
layer) or 5 nm Au/5 nm Ti film was deposited onto MoS<sub>2</sub> monolayers
and few layers, and the topography of metal films was characterized
using scanning electron microscopy and atomic force microscopy. The
surface morphology shows that, while there exist pinholes in Au/Ti
film on MoS<sub>2</sub>, Au/Ag forms a smoother and denser film. Raman
spectroscopy was carried out to investigate the metalâMoS<sub>2</sub> interface. The Raman spectra from MoS<sub>2</sub> covered
with Au/Ag or Au/Ti film reveal that Ag or Ti is in direct contact
with MoS<sub>2</sub>. Our findings show that the smoother and denser
Au/Ag contacts lead to higher carrier transport efficiency