Large microwave generation from d.c. driven magnetic vortex oscillators in magnetic tunnel junctions

Spin polarized current can excite the magnetization of a ferromagnet through the transfer of spin angular momentum to the local spin system. This pure spin-related transport phenomena leads to alluring possibilities for the achievement of a nanometer scale, CMOS compatible and tunable microwave generator operating at low bias for future wireless communications. Microwave emission generated by the persitent motion of magnetic vortices induced by spin transfer effect seems to be a unique manner to reach appropriate spectral linewidth. However, in metallic systems, where such vortex oscillations have been observed, the resulting microwave power is much too small. Here we present experimental evidences of spin-transfer induced core vortex precessions in MgO-based magnetic tunnel junctions with similar good spectral quality but an emitted power at least one order of magnitude stronger. More importantly, unlike to others spin transfer excitations, the thorough comparison between experimental results and models provide a clear textbook illustration of the mechanisms of vortex precessions induced by spin transfer

Tailoring the magnetic properties of Fe asymmetric nanodots

Asymmetric dots as a function of their geometry have been investigated using three-dimensional (3D) object oriented micromagnetic framework (OOMMF) code. The effect of shape asymmetry of the disk on coercivity and remanence is studied. Angular dependence of the remanence and coercivity is also addressed. Asymmetric dots are found to reverse their magnetization by nucleation and propagation of a vortex, when the field is applied parallel to the direction of asymmetry. However, complex reversal modes appear when the angle at which the external field is applied is varied, leading to a non monotonic behavior of the coercivity and remanence.Comment: 5 pages, 7 figure

Polarons and confinement of electronic motion to two dimensions in a layered transition metal oxide

A very remarkable feature of the layered transition metal oxides (TMOs), whose most famous members are the high-temperature superconductors (HTSs), is that even though they are prepared as bulk three-dimensional single crystals, they display hugely anisotropic electrical and optical properties, seeming to be insulating perpendicular to the layers and metallic within them. This is the phenomenon of confinement, a concept at odds with the conventional theory of solids and recognized as due to magnetic and electron-lattice interactions in the layers which must be overcome at a substantial energy cost if electrons are to be transferred between layers. The associated energy gap or 'pseudogap' is particularly obvious in experiments where charge is moved perpendicular to the planes, most notably scanning tunneling microscopy (STM) and polarized infrared spectroscopy. Here, using the same experimental tools, we show that there is a second family of TMOs - the layered manganites La2-2xSr1+2xMn2O7 (LSMO) - with even more extreme confinement and pseudogap effects. The data, which are the first to resolve atoms in any metallic manganite, demonstrate quantitatively that because they are attached to polarons - lattice and spin textures within the planes -, it is equally difficult to remove carriers from the planes via vacuum tunneling into a conventional metallic tip, as it is for them to move between Mn-rich layers within the material itself

Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepared by deposition at cryogenic temperatures

We investigated the influence of the buffer material and a cryogenic temperature deposition process on the voltage-controlled magnetic anisotropy (VCMA) effect for an ultrathin CoFeB layer in bottom-free type MgO-based magnetic tunnel junctions prepared by a mass production sputtering process. We used Ta and TaB buffers and compared the differences between them. The TaB buffer enabled us to form a flat and less-contaminated CoFeB/MgO interface by suppressing the diffusion of Ta with maintaining a stable amorphous phase. Furthermore, the introduction of cryogenic temperature deposition for the ultrathin CoFeB layer on the TaB buffer improved the efficiency of the VCMA effect and its annealing tolerance. Combining this with interface engineering employing an Ir layer for doping and a CoFe termination layer, a large VCMA coefficient of −138 ± 3 fJ/Vm was achieved. The developed techniques for the growth of ultrathin ferromagnet and oxide thin films using cryogenic temperature deposition will contribute to the development of high-performance spintronic devices, such as voltage-controlled magnetoresistive random access memories