Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance

The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgO interface is important to interpret the strong annealing temperature dependence of tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunnel junctions, which increases with annealing temperature from 20% after annealing at 200C up to a maximum value of 112% after annealing at 350C. While the well defined nearest neighbor ordering indicating crystallinity of the MgO barrier does not change by the annealing, a small amount of interfacial Fe-O at the lower Co-Fe-B / MgO interface is found in the as grown samples, which is completely reduced after annealing at 275C. This is accompanied by a simultaneous increase of the Fe magnetic moment and the tunnel magnetoresistance. However, the TMR of the MgO based junctions increases further for higher annealing temperature which can not be caused by Fe-O reduction. The occurrence of an x-ray absorption near-edge structure above the Fe and Co L-edges after annealing at 350C indicates the recrystallization of the Co-Fe-B electrode. This is prerequisite for coherent tunneling and has been suggested to be responsible for the further increase of the TMR above 275C. Simultaneously, the B concentration in the Co-Fe-B decreases with increasing annealing temperature, at least some of the B diffuses towards or into the MgO barrier and forms a B2O3 oxide

Simultaneous Surface Plasmon Resonance and X-ray Absorption Spectroscopy

We present here an experimental set-up to perform simultaneously measurements of surface plasmon resonance (SPR) and X-ray absorption spectroscopy (XAS) in a synchrotron beamline. The system allows measuring in situ and in real time the effect of X-ray irradiation on the SPR curves to explore the interaction of X-rays with matter. It is also possible to record XAS spectra while exciting SPR in order to detect the changes in the electronic configuration of thin films induced by the excitation of surface plasmons. Combined experiments recording simultaneously SPR and XAS curves while scanning different parameters can be carried out. The relative variations in the SPR and XAS spectra that can be detected with this set-up ranges from 10-3 to 10-5, depending on the particular experiment

Electronic structure studies of Fe- ZnO nanorods by x-ray absorption fine structure

We report the electronic structure studies of well characterized polycrystalline Zn_{1-x}Fe_xO (x = 0.0, 0.01, 0.03, and 0.05) nanorods synthesized by a co-precipitation method through x-ray absorption fine structure (XAFS). X-ray diffraction (XRD) reveals that Fe doped ZnO crystallizes in a single phase wurtzite structure without any secondary phase. From the XRD pattern, it is observed that peak positions shift towards lower 2\theta value with Fe doping. The change in the peak positions with increase in Fe contents clearly indicates that Fe ions are replacing Zn ions in the ZnO matrix. Linear combination fittings (LCF) at Fe K-edge demonstrate that Fe is in mixed valent state (Fe3+/Fe2+) with a ratio of ~ 7:3 (Fe3+:Fe2+). XAFS data is successfully fitted to wurtzite structure using IFEFFIT and Artemis. The results indicate that Fe substitutes Zn site in the ZnO matrix in tetrahedral symmetry.Comment: 7 pages, 5 figures, 2 tables, regular articl

Isochronal annealing effects on local structure, crystalline fraction, and undamaged region size of radiation damage in Ga-stabilized δ\delta-Pu

The effects on the local structure due to self-irradiation damage of Ga stabilized $\delta$-Pu stored at cryogenic temperatures have been examined using extended x-ray absorption fine structure (EXAFS) experiments. Extensive damage, seen as a loss of local order, was evident after 72 days of storage below 15 K. The effect was observed from both the Pu and Ga sites, although less pronounced around Ga. Isochronal annealing was performed on this sample to study the annealing processes that occur between cryogenic and room temperature storage conditions, where damage is mostly reversed. Damage fractions at various points along the annealing curve have been determined using an amplitude-ratio method, standard EXAFS fitting, and a spherical crystallite model, and provide information complementary to previous electrical resistivity- and susceptibility-based isochronal annealing studies. The use of a spherical crystallite model accounts for the changes in EXAFS spectra using just two parameters, namely, the crystalline fraction and the particle radius. Together, these results are discussed in terms of changes to the local structure around Ga and Pu throughout the annealing process and highlight the unusual role of Ga in the behavior of the lowest temperature anneals.Comment: 13 pages, 10 figure

Reduction of the Yb valence in YbAl3 nanoparticles

Measurements of specific heat, dc magnetic susceptibility, and Yb LII and LIII x-ray absorption near-edge structure XANES and extended x-ray absorption fine structure EXAFS on YbAl3 milled alloys are reported. X-ray diffraction patterns are consistent with a reduction in particle size down to 10 nm and an increase in the lattice strain up to 0.4% for 120 h of milling time. A decrease in the mean valence from 2.86 for the unmilled alloy to 2.70 for 120 h milled YbAl3 is obtained from the analysis of XANES spectra. From the analysis of spectra in the EXAFS region, an increase in the mean-square disorder of neighbor distance with milling time is detected in good agreement with the results of x-ray diffraction. Size effects strongly influence the magnetic and thermal properties. The value for the maximum of the magnetic susceptibility decreases around 30% for 120 h milled alloy and an excess specific heat, with a peak around 40 K in the milled samples, is derived. These changes in the physical properties along the milled YbAl3 alloys are associated with the reduction in particle size. Such a reduction leads to the existence of a large number of Yb2+ atoms at the surface with respect to the bulk affecting the overall electronic state