547 research outputs found

    Calculations of exchange interaction in impurity band of two-dimensional semiconductors with out of plane impurities

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    We calculate the singlet-triplet splitting for a couple of two-dimensional electrons in the potential of two positively charged impurities which are located out of plane. We consider different relations between vertical distances of impurities h1h_1 and h2h_2 and their lateral distance RR. Such a system has never been studied in atomic physics but the methods, worked out for regular two-atomic molecules and helium atom, have been found to be useful. Analytical expressions for several different limiting configurations of impurities are obtained an interpolated formula for intermediate range of parameters is proposed. The RR-dependence of the splitting is shown to become weaker with increasing h1,h2h_1,h_2.Comment: 14 pages, RevTeX, 5 figures. Submitted to Phys Rev.

    The Increase in Thickness Uniformity of Films Obtained by Magnetron Sputtering with Rotating Substrate

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    The titanium thin films obtained by magnetron sputtering with the rotating substrate at different distances between the substrate and magnetron centers were studied with regard to the uniformity of the film thickness distribution. On the basis of the experimental data obtained, the model for the magnetron film deposition during substrate rotation was developed. The analysis of the simulation results shows that the model error is not greater than 10%

    ΠžΠ΄Π½ΠΎΡ€Π΅Π°ΠΊΡ‚ΠΎΡ€Π½ΠΈΠΉ синтСз Π·Π°ΠΌΡ–Ρ‰Π΅Π½ΠΈΡ… Ρ–ΠΌΡ–Π΄Π°Π·ΠΎΠ»Ρ–Π΄ΠΈΠ½-2-ΠΎΠ½Ρ–Π² Π·Π° ΡƒΡ‡Π°ΡΡ‚ΡŽ Ρ‚Ρ–ΠΎΠ±Π°Ρ€Π±Ρ–Ρ‚ΡƒΡ€ΠΎΠ²ΠΎΡ— кислоти, арилгліоксалів Ρ‚Π° сСчовин

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    Derivatives of imidozoline-2-ones containing the pyrimidinthionic moiety in position 4 have been synthesized by three-component one-pot condensation of thiobarbituric acid, arylglyoxal hydrates and ureas. It has been found that these compounds exist in the solution of DMSO-d6 as a mixture of two tautomeric forms: for products obtained from N-substituted ureas the imidazolidin form predominates; and in the case of urea the imidazolidin and imidazolin forms are present in the ratio of 1:1.Π’Ρ€Π΅Ρ…ΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½Ρ‚Π½ΠΎΠΉ кондСнсациСй Ρ‚ΠΈΠΎΠ±Π°Ρ€Π±ΠΈΡ‚ΡƒΡ€ΠΎΠ²ΠΎΠΉ кислоты, Π³ΠΈΠ΄Ρ€Π°Ρ‚ΠΎΠ² арилглиоксалСй ΠΈ ΠΌΠΎΡ‡Π΅Π²ΠΈΠ½ синтСзированы ΠΏΡ€ΠΎΠΈΠ·Π²ΠΎΠ΄Π½Ρ‹Π΅ ΠΈΠΌΠΈΠ΄Π°Π·ΠΎΠ»ΠΈΠ΄ΠΈΠ½-2-ΠΎΠ½ΠΎΠ², содСрТащиС остаток ΠΏΠΈΡ€ΠΈΠΌΠΈΠ΄ΠΈΠ½Ρ‚ΠΈΠΎΠ½Π½ΠΎΠ³ΠΎ Ρ„Ρ€Π°Π³ΠΌΠ΅Π½Ρ‚Π° Π² ΠΏΠΎΠ»ΠΎΠΆΠ΅Π½ΠΈΠΈ 4. УстановлСно, Ρ‡Ρ‚ΠΎ эти соСдинСния ΡΡƒΡ‰Π΅ΡΡ‚Π²ΡƒΡŽΡ‚ Π² растворС Π”ΠœΠ‘Πž-d6 Π² Π²ΠΈΠ΄Π΅ смСси Π΄Π²ΡƒΡ… Ρ‚Π°ΡƒΡ‚ΠΎΠΌΠ΅Ρ€Π½Ρ‹Ρ… Ρ„ΠΎΡ€ΠΌ: для ΠΏΡ€ΠΎΠ΄ΡƒΠΊΡ‚ΠΎΠ², ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Ρ… Π½Π° основС N-Π·Π°ΠΌΠ΅Ρ‰Π΅Π½Π½Ρ‹Ρ… ΠΌΠΎΡ‡Π΅Π²ΠΈΠ½, ΠΏΡ€Π΅ΠΎΠ±Π»Π°Π΄Π°Π΅Ρ‚ имидазолидиновая Ρ„ΠΎΡ€ΠΌΠ°, Ρ‚ΠΎΠ³Π΄Π° ΠΊΠ°ΠΊ Π² случаС ΠΌΠΎΡ‡Π΅Π²ΠΈΠ½Ρ‹ имидазолидиновая ΠΈ имидазолиновая Ρ„ΠΎΡ€ΠΌΡ‹ ΠΏΡ€ΠΈΡΡƒΡ‚ΡΡ‚Π²ΡƒΡŽΡ‚ Π² ΡΠΎΠΎΡ‚Π½ΠΎΡˆΠ΅Π½ΠΈΠΈ 1:1.Π’Ρ€ΠΈΠΊΠΎΠΌΠΏΠΎΠ½Π΅Π½Ρ‚Π½ΠΎΡŽ ΠΊΠΎΠ½Π΄Π΅Π½ΡΠ°Ρ†Ρ–Ρ”ΡŽ Π³Ρ–Π΄Ρ€Π°Ρ‚Ρ–Π² арилгліоксалів, Ρ‚Ρ–ΠΎΠ±Π°Ρ€Π±Ρ–Ρ‚ΡƒΡ€ΠΎΠ²ΠΎΡ— кислоти Ρ– сСчовин синтСзовано ΠΏΠΎΡ…Ρ–Π΄Π½Ρ– Ρ–ΠΌΡ–Π΄Π°Π·ΠΎΠ»Ρ–Π΄ΠΈΠ½-2-ΠΎΠ½Ρƒ Ρ–Π· залишком ΠΏΡ–Ρ€ΠΈΠΌΡ–Π΄ΠΈΠ½Ρ‚Ρ–ΠΎΠ½Π½ΠΎΠ³ΠΎ Ρ„Ρ€Π°Π³ΠΌΠ΅Π½Ρ‚Ρƒ Π² ΠΏΠΎΠ»ΠΎΠΆΠ΅Π½Π½Ρ– 4. ВстановлСно, Ρ‰ΠΎ ΠΎΡ‚Ρ€ΠΈΠΌΠ°Π½Ρ– сполуки Ρ–ΡΠ½ΡƒΡŽΡ‚ΡŒ Ρƒ Ρ€ΠΎΠ·Ρ‡ΠΈΠ½Ρ– Π”ΠœΠ‘Πž-d6 як ΡΡƒΠΌΡ–Ρˆ Π΄Π²ΠΎΡ… Ρ‚Π°ΡƒΡ‚ΠΎΠΌΠ΅Ρ€Π½ΠΈΡ… Ρ„ΠΎΡ€ΠΌ: для ΠΏΡ€ΠΎΠ΄ΡƒΠΊΡ‚Ρ–Π², ΠΎΠ΄Π΅Ρ€ΠΆΠ°Π½ΠΈΡ… Π½Π° основі N-Π·Π°ΠΌΡ–Ρ‰Π΅Π½ΠΈΡ… сСчовин, ΠΏΠ΅Ρ€Π΅Π²Π°ΠΆΠ°Ρ” Ρ–ΠΌΡ–Π΄Π°Π·ΠΎΠ»Ρ–Π΄ΠΈΠ½ΠΎΠ²Π° Ρ„ΠΎΡ€ΠΌΠ°, Ρ‚ΠΎΠ΄Ρ– як Ρƒ Π²ΠΈΠΏΠ°Π΄ΠΊΡƒ сСчовини Ρ–ΠΌΡ–Π΄Π°Π·ΠΎΠ»Ρ–Π΄ΠΈΠ½ΠΎΠ²Π° Ρ‚Π° Ρ–ΠΌΡ–Π΄Π°Π·ΠΎΠ»Ρ–Π½ΠΎΠ²Π° Ρ„ΠΎΡ€ΠΌΠΈ присутні Ρƒ ΡΠΏΡ–Π²Π²Ρ–Π΄Π½ΠΎΡˆΠ΅Π½Π½Ρ– 1:1

    Π Π΅Π°ΠΊΡ‚ΠΎΡ€Ρ‹ с микротвэлами: Π³ΠΈΠ΄Ρ€ΠΎΠ΄ΠΈΠ½Π°ΠΌΠΈΠΊΠ° ΠΏΡ€ΠΎΠ½ΠΈΡ†Π°Π΅ΠΌΡ‹Ρ… ΠΊΠ°Π½Π°Π»ΠΎΠ² насыпной сборки

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    The prospect of use of fuel in the form of micro particles (balls with a diameter about a millimeter formed by the fissile material and a protective cover to hold the radioactive fission products) in nuclear reactors is disclosed. It’s marked that flow ability, large specific surface of heat removal, extraordinary high resistance of micro fuel particles allow to design innovative safe reactors for various purpose: transportable, breeders, high-temperature, high neutron flux etc. It’s suggested to complete the active zone by bulk heat releasing assemblies. In them the advantages of spherical micro fuel particles and a coolant side supply to the bed through permeable distribution and branch channels are harmoniously combined in these assembles. It is presented the scheme of bulk assemblies and carried out the analysis of modeling of dynamics of a stream in permeable channels. It is shown that the mathematical description of liquid movement in such channels has ambiguity and discrepancy. To eliminate modeling shortcomings a new kinematic image of current in the permeable channels was offered. It was proposed instead of the existing one representing a jet to which particles of coolant were continuously joined or separated on the permeable wall. In the new interpretation the flow in the permeable channel is considered as turn of the stream at its simultaneous expansion or narrowing depending on there is outflow or inflow. On the base of this image the equation for determination of coolant pressure changing in the permeable channel is obtained; reaction of a stream for changing of flow rate increment is established, the tangent component of a velocity on a permeable wall is founded. Thereby the disadvantages of describing of coolant moving in the bulk assembles channels are eliminated. Permeable channels are used not only in nuclear reactors, but also in many other technological devices: catalytic reactors, heat exchangers, filters, collector and distributing systems. The obtained results can be used for designing other devices with permeable channels.Раскрыта пСрспСктива использования Π² ядСрных Ρ€Π΅Π°ΠΊΡ‚ΠΎΡ€Π°Ρ… Ρ‚ΠΎΠΏΠ»ΠΈΠ²Π° Π² Π²ΠΈΠ΄Π΅ микротвэлов – ΡˆΠ°Ρ€ΠΈΠΊΠΎΠ² ΠΈΠ· дСлящСгося ΠΌΠ°Ρ‚Π΅Ρ€ΠΈΠ°Π»Π° Π΄ΠΈΠ°ΠΌΠ΅Ρ‚Ρ€ΠΎΠΌ порядка ΠΌΠΈΠ»Π»ΠΈΠΌΠ΅Ρ‚Ρ€Π°, ΠΏΠΎΠΊΡ€Ρ‹Ρ‚Ρ‹Ρ… Π·Π°Ρ‰ΠΈΡ‚Π½ΠΎΠΉ ΠΎΠ±ΠΎΠ»ΠΎΡ‡ΠΊΠΎΠΉ для удСрТания Ρ€Π°Π΄ΠΈΠΎΠ°ΠΊΡ‚ΠΈΠ²Π½Ρ‹Ρ… ΠΏΡ€ΠΎΠ΄ΡƒΠΊΡ‚ΠΎΠ² дСлСния. ΠžΡ‚ΠΌΠ΅Ρ‡Π΅Π½ΠΎ, Ρ‡Ρ‚ΠΎ ΡΡ‹ΠΏΡƒΡ‡Π΅ΡΡ‚ΡŒ, большая ΡƒΠ΄Π΅Π»ΡŒΠ½Π°Ρ ΠΏΠΎΠ²Π΅Ρ€Ρ…Π½ΠΎΡΡ‚ΡŒ Ρ‚Π΅ΠΏΠ»ΠΎΡΡŠΠ΅ΠΌΠ°, Π½Π΅ΠΎΠ±Ρ‹Ρ‡Π°ΠΉΠ½ΠΎ высокая ΡΡ‚ΠΎΠΉΠΊΠΎΡΡ‚ΡŒ микротвэлов ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡŽΡ‚ Π½Π° ΠΈΡ… Π±Π°Π·Π΅ ΠΏΡ€ΠΎΠ΅ΠΊΡ‚ΠΈΡ€ΠΎΠ²Π°Ρ‚ΡŒ ΠΈΠ½Π½ΠΎΠ²Π°Ρ†ΠΈΠΎΠ½Π½Ρ‹Π΅ бСзопасныС Ρ€Π΅Π°ΠΊΡ‚ΠΎΡ€Ρ‹ Ρ€Π°Π·Π»ΠΈΡ‡Π½ΠΎΠ³ΠΎ Ρ†Π΅Π»Π΅Π²ΠΎΠ³ΠΎ назначСния (Ρ‚Ρ€Π°Π½ΡΠΏΠΎΡ€Ρ‚Π°Π±Π΅Π»ΡŒΠ½Ρ‹Π΅, Π±Ρ€ΠΈΠ΄Π΅Ρ€Ρ‹, высокотСмпСратурныС, высокопоточныС ΠΈ Ρ‚. Π΄.). ΠŸΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½Π° комплСктация Π°ΠΊΡ‚ΠΈΠ²Π½ΠΎΠΉ Π·ΠΎΠ½Ρ‹ Ρ€Π΅Π°ΠΊΡ‚ΠΎΡ€Π° с насыпными Ρ‚Π΅ΠΏΠ»ΠΎΠ²Ρ‹Π΄Π΅Π»ΡΡŽΡ‰ΠΈΠΌΠΈ сборками. Π’ Π½ΠΈΡ… Π³Π°Ρ€ΠΌΠΎΠ½ΠΈΡ‡Π½ΠΎ ΡΠΎΡ‡Π΅Ρ‚Π°ΡŽΡ‚ΡΡ достоинства микротвэлов с прСимущСствами Π±ΠΎΠΊΠΎΠ²ΠΎΠ³ΠΎ ΠΏΠΎΠ΄Π²ΠΎΠ΄Π° тСплоноситСля ΠΊ Ρ‚ΠΎΠΏΠ»ΠΈΠ²Π½ΠΎΠΌΡƒ слою с ΠΏΠΎΠΌΠΎΡ‰ΡŒΡŽ ΠΏΡ€ΠΎΠ½ΠΈΡ†Π°Π΅ΠΌΡ‹Ρ… Ρ€Π°ΡΠΏΡ€Π΅Π΄Π΅Π»ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΠ³ΠΎ ΠΈ ΠΎΡ‚Π²ΠΎΠ΄Π½ΠΎΠ³ΠΎ ΠΊΠ°Π½Π°Π»ΠΎΠ². ΠŸΡ€Π΅Π΄ΡΡ‚Π°Π²Π»Π΅Π½Π° схСма насыпной сборки ΠΈ ΠΏΡ€ΠΎΠ²Π΅Π΄Π΅Π½ Π°Π½Π°Π»ΠΈΠ· модСлирования Π΄ΠΈΠ½Π°ΠΌΠΈΠΊΠΈ ΠΏΠΎΡ‚ΠΎΠΊΠ° Π² ΠΏΡ€ΠΎΠ½ΠΈΡ†Π°Π΅ΠΌΡ‹Ρ… ΠΊΠ°Π½Π°Π»Π°Ρ…. Показано, Ρ‡Ρ‚ΠΎ ΡΡƒΡ‰Π΅ΡΡ‚Π²ΡƒΡŽΡ‰Π΅Π΅ матСматичСскоС описаниС двиТСния тСплоноситСля Π² Π½ΠΈΡ… отличаСтся Π½Π΅ΠΎΠ΄Π½ΠΎΠ·Π½Π°Ρ‡Π½ΠΎΡΡ‚ΡŒΡŽ ΠΈ ΠΏΡ€ΠΎΡ‚ΠΈΠ²ΠΎΡ€Π΅Ρ‡ΠΈΠ²ΠΎΡΡ‚ΡŒΡŽ. Для устранСния нСдостатков Π² ΠΌΠΎΠ΄Π΅Π»ΠΈΡ€ΠΎΠ²Π°Π½ΠΈΠΈ построСн Π½ΠΎΠ²Ρ‹ΠΉ кинСматичСский ΠΎΠ±Ρ€Π°Π· тСчСния Π² ΠΏΡ€ΠΎΠ½ΠΈΡ†Π°Π΅ΠΌΠΎΠΌ ΠΊΠ°Π½Π°Π»Π΅ Π²Π·Π°ΠΌΠ΅Π½ ΡΡƒΡ‰Π΅ΡΡ‚Π²ΡƒΡŽΡ‰Π΅Π³ΠΎ, ΠΏΡ€Π΅Π΄ΡΡ‚Π°Π²Π»ΡΡŽΡ‰Π΅Π³ΠΎ собой ΡΡ‚Ρ€ΡƒΡŽ, ΠΊ ΠΊΠΎΡ‚ΠΎΡ€ΠΎΠΉ Π½Π° ΠΏΡ€ΠΎΠ½ΠΈΡ†Π°Π΅ΠΌΠΎΠΉ стСнкС Π½Π΅ΠΏΡ€Π΅Ρ€Ρ‹Π²Π½ΠΎ ΠΏΡ€ΠΈΡΠΎΠ΅Π΄ΠΈΠ½ΡΡŽΡ‚ΡΡ ΠΈΠ»ΠΈ ΠΎΡ‚Π΄Π΅Π»ΡΡŽΡ‚ΡΡ ΠΎΡ‚ Π½Π΅Π΅ частицы тСплоноситСля. Π”Π²ΠΈΠΆΠ΅Π½ΠΈΠ΅ Π² ΠΏΡ€ΠΎΠ½ΠΈΡ†Π°Π΅ΠΌΠΎΠΌ ΠΊΠ°Π½Π°Π»Π΅ Π² Π½ΠΎΠ²ΠΎΠΉ Ρ‚Ρ€Π°ΠΊΡ‚ΠΎΠ²ΠΊΠ΅ рассматриваСтся ΠΊΠ°ΠΊ ΠΏΠΎΠ²ΠΎΡ€ΠΎΡ‚ ΠΏΠΎΡ‚ΠΎΠΊΠ° ΠΏΡ€ΠΈ ΠΎΠ΄Π½ΠΎΠ²Ρ€Π΅ΠΌΠ΅Π½Π½ΠΎΠΌ Π΅Π³ΠΎ Ρ€Π°ΡΡˆΠΈΡ€Π΅Π½ΠΈΠΈ ΠΈΠ»ΠΈ суТСнии Π² зависимости ΠΎΡ‚ Ρ‚ΠΎΠ³ΠΎ, происходит Π² ΠΊΠ°Π½Π°Π»Π΅ ΠΎΡ‚Ρ‚ΠΎΠΊ ΠΈΠ»ΠΈ ΠΏΡ€ΠΈΡ‚ΠΎΠΊ. На основании Ρ‚Π°ΠΊΠΎΠ³ΠΎ прСдставлСния ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½ΠΎ ΡƒΡ€Π°Π²Π½Π΅Π½ΠΈΠ΅ измСнСния давлСния тСплоноситСля Π² ΠΏΡ€ΠΎΠ½ΠΈΡ†Π°Π΅ΠΌΠΎΠΌ ΠΊΠ°Π½Π°Π»Π΅, ΠΎΠΏΡ€Π΅Π΄Π΅Π»Π΅Π½Π° рСакция ΠΏΠΎΡ‚ΠΎΠΊΠ° Π½Π° ΠΏΡ€ΠΈΡ€Π°Ρ‰Π΅Π½ΠΈΠ΅ расхода, описана Π²Π΅Π»ΠΈΡ‡ΠΈΠ½Π° ΠΊΠ°ΡΠ°Ρ‚Π΅Π»ΡŒΠ½ΠΎΠΉ ΡΠΎΡΡ‚Π°Π²Π»ΡΡŽΡ‰Π΅ΠΉ Π²Π΅ΠΊΡ‚ΠΎΡ€Π° скорости Π½Π° ΠΏΡ€ΠΎΠ½ΠΈΡ†Π°Π΅ΠΌΠΎΠΉ стСнкС, Ρ‚Π΅ΠΌ самым устранСны нСдостатки описания двиТСния тСплоноситСля Π² ΠΊΠ°Π½Π°Π»Π°Ρ… насыпной сборки. ΠŸΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Π΅ Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Ρ‹ ΠΌΠΎΠ³ΡƒΡ‚ Ρ‚Π°ΠΊΠΆΠ΅ ΠΈΡΠΏΠΎΠ»ΡŒΠ·ΠΎΠ²Π°Ρ‚ΡŒΡΡ ΠΏΡ€ΠΈ ΠΏΡ€ΠΎΠ΅ΠΊΡ‚ΠΈΡ€ΠΎΠ²Π°Π½ΠΈΠΈ Π΄Ρ€ΡƒΠ³ΠΈΡ… тСхничСских устройств, содСрТащих ΠΏΡ€ΠΎΠ½ΠΈΡ†Π°Π΅ΠΌΡ‹Π΅ ΠΊΠ°Π½Π°Π»Ρ‹

    Antiproton-Hydrogen annihilation at sub-kelvin temperatures

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    The main properties of the interaction of ultra low-energy antiprotons (E≀10βˆ’6% E\le10^{-6} a.u.) with atomic hydrogen are established. They include the elastic and inelastic cross sections and Protonium (Pn) formation spectrum. The inverse Auger process (Pn+eβ†’H+pΛ‰Pn+e \to H+\bar{p}) is taken into account in the framework of an unitary coupled-channels model. The annihilation cross-section is found to be several times smaller than the predictions made by the black sphere absorption models. A family of pΛ‰H\bar{p}H nearthreshold metastable states is predicited. The dependence of Protonium formation probability on the position of such nearthreshold S-matrix singularities is analysed. An estimation for the HHΛ‰H\bar{H} annihilation cross section is obtained.Comment: latex.tar.gz file, 22 pages, 9 figure

    Influence of the annealing temperature on the ferroelectric properties of niobium-doped strontium–bismuth tantalate

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    Characteristics of ferroelectric thin films of nio-bium-doped strontium–bismuth tantalite (SBTN), which were deposited by magnetron sputtering on Pt/TiO2/SiO2/Si substrates, are investigated. To form the ferroelectric structure, deposited films were subjected to subsequent annealing at 700–800Β°C in an O2 atmosphere. The results of X-ray diffraction showed that the films immediately after the deposition have an amorphous structure. Annealing at 700–800Β°C results in the formation of the Aurivillius struc-ture. The dependences of permittivity, residual polariza-tion, and the coercitivity of SBTN films on the modes of subsequent annealing are established. Films with residual polarization 2Pr = 9.2 ΞΌC/cm2, coercitivity 2Ec = 157 kV/cm, and leakage current 10–6 A/cm2 are obtained at the annealing temperature of 800Β°C. The dielectric constant and loss tangent at fre-quency of 1.0 MHz were Ξ΅ = 152 and tanΞ΄ = 0.06. The ferroelectric characteristics allow us to use the SBTN films in the capacitor cell of high density ferroelectric random-access non-volatile memory (FeRAM)
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