196 research outputs found
Highly Non-linear Excitonic Zeeman Spin-Splitting in Composition-Engineered Artificial Atoms
Non-linear Zeeman splitting of neutral excitons is observed in composition
engineered In(x)Ga(1-x)As self-assembled quantum dots and its microscopic
origin is explained. Eight-band k.p simulations, performed using realistic dot
parameters extracted from cross-sectional scanning tunneling microscopy, reveal
that a quadratic contribution to the Zeeman energy originates from a spin
dependent mixing of heavy and light hole orbital states in the dot. The dilute
In-composition (x<0.35) and large lateral size (40-50 nm) of the quantum dots
investigated is shown to strongly enhance the non-linear excitonic Zeeman gap,
providing a blueprint to enhance such magnetic non-linearities via growth
engineering
Sn delta-doping in GaAs
We have prepared a number of GaAs structures delta-doped by Sn using the
well-known molecular beam epitaxy growth technique. The samples obtained for a
wide range of Sn doping densities were characterised by magnetotransport
experiments at low temperatures and in high magnetic fields up to 38 T.
Hall-effect and Shubnikov-de Haas measurements show that the electron densities
reached are higher than for other delta-dopants, like Si and Be. The maximum
carrier density determined by the Hall effect equals 8.4x10^13 cm^-2. For all
samples several Shubnikov-de Haas frequencies were observed, indicating the
population of multiple subbands. The depopulation fields of the subbands were
determined by measuring the magnetoresistance with the magnetic field in the
plane of the delta-layer. The experimental results are in good agreement with
selfconsistent bandstructure calculations. These calculation shows that in the
sample with the highest electron density also the conduction band at the L
point is populated.Comment: 11 pages text (ps), 9 figures (ps), submitted to Semicon. Science
Tech
On the Connection of Anisotropic Conductivity to Tip Induced Space Charge Layers in Scanning Tunneling Spectroscopy of p-doped GaAs
The electronic properties of shallow acceptors in p-doped GaAs{110} are
investigated with scanning tunneling microscopy at low temperature. Shallow
acceptors are known to exhibit distinct triangular contrasts in STM images for
certain bias voltages. Spatially resolved I(V)-spectroscopy is performed to
identify their energetic origin and behavior. A crucial parameter - the STM
tip's work function - is determined experimentally. The voltage dependent
potential configuration and band bending situation is derived. Ways to validate
the calculations with the experiment are discussed. Differential conductivity
maps reveal that the triangular contrasts are only observed with a depletion
layer present under the STM tip. The tunnel process leading to the anisotropic
contrasts calls for electrons to tunnel through vacuum gap and a finite region
in the semiconductor.Comment: 11 pages, 8 figure
Tuning Locked Inflation: Supergravity versus Phenomenology
We analyze the cosmological consequences of locked inflation, a model
recently proposed by Dvali and Kachru that can produce significant amounts of
inflation without requiring slow-roll. We pay particular attention to the end
of inflation in this model, showing that a secondary phase of saddle inflation
can follow the locked inflationary era. However, this subsequent period of
inflation results in a strongly scale dependent spectrum that can lead to
massive black hole formation in the primordial universe. Avoiding this
disastrous outcome puts strong constraints on the parameter space open to
models of locked inflation.Comment: 7 pages, 2 figure
Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures
We have studied the ensemble photoluminescence (PL) of 11 GaSb/GaAs quantum dot/ring (QD/QR) samples over ≥5 orders of magnitude of laser power. All samples exhibit a blueshift of PL energy, ΔE, with increasing excitation power, as expected for type-II structures. It is often assumed that this blueshift is due to band-bending at the type-II interface. However, for a sample where charge-state sub-peaks are observed within the PL emission, it is unequivocally shown that the blueshift due to capacitive charging is an order of magnitude larger than the band bending contribution. Moreover, the size of the blueshift and its linear dependence on occupancy predicted by a simple capacitive model are faithfully replicated in the data. In contrast, when QD/QR emission intensity, I, is used to infer QD/QR occupancy, n, via the bimolecular recombination approximation (I ∝ n 2), exponents, x, in Δ E ∝ I x are consistently lower than expected, and strongly sample dependent. We conclude that the exponent x cannot be used to differentiate between capacitive charging and band bending as the origin of the blueshift in type-II QD/QRs, because the bimolecular recombination is not applicable to type-II QD/QRs
Spatial structure of an individual Mn acceptor in GaAs
The wave function of a hole bound to an individual Mn acceptor in GaAs is
spatially mapped by scanning tunneling microscopy at room temperature and an
anisotropic, cross-like shape is observed. The spatial structure is compared
with that from an envelope-function, effective mass model, and from a
tight-binding model. This demonstrates that anisotropy arising from the cubic
symmetry of the GaAs crystal produces the cross-like shape for the hole
wave-function. Thus the coupling between Mn dopants in GaMnAs mediated by such
holes will be highly anisotropic.Comment: 3 figures, submitted to PR
An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory
Silicon (Si) donors in GaAs have been the topic of extensive studies since Si
is the most common and well understood n-type dopant in III-V semiconductor
devices and substrates. The indirect bandgap of AlAs compared to the direct one
of GaAs leads to interesting effects when introducing Si dopants. Here we
present a study of cross-sectional scanning tunneling microscopy (X-STM) and
density functional theory (DFT) calculations to study Si donors in AlAs at the
atomic scale. Based on their crystal symmetry and contrast strengths, we
identify Si donors up to four layers below the (110) surface of AlAs.
Interestingly, their short-range local density of states (LDOS) is very similar
to Si atoms in the (110) surface of GaAs. Additionally we show high-resolution
images of Si donors in all these layers. For empty state imaging, the
experimental and simulated STM images based on DFT show excellent agreement for
Si donor up to two layers below the surface
Magnetic Anisotropy of Single Mn Acceptors in GaAs in an External Magnetic Field
We investigate the effect of an external magnetic field on the physical
properties of the acceptor hole states associated with single Mn acceptors
placed near the (110) surface of GaAs. Crosssectional scanning tunneling
microscopy images of the acceptor local density of states (LDOS) show that the
strongly anisotropic hole wavefunction is not significantly affected by a
magnetic field up to 6 T. These experimental results are supported by
theoretical calculations based on a tightbinding model of Mn acceptors in GaAs.
For Mn acceptors on the (110) surface and the subsurfaces immediately
underneath, we find that an applied magnetic field modifies significantly the
magnetic anisotropy landscape. However the acceptor hole wavefunction is
strongly localized around the Mn and the LDOS is quite independent of the
direction of the Mn magnetic moment. On the other hand, for Mn acceptors placed
on deeper layers below the surface, the acceptor hole wavefunction is more
delocalized and the corresponding LDOS is much more sensitive on the direction
of the Mn magnetic moment. However the magnetic anisotropy energy for these
magnetic impurities is large (up to 15 meV), and a magnetic field of 10 T can
hardly change the landscape and rotate the direction of the Mn magnetic moment
away from its easy axis. We predict that substantially larger magnetic fields
are required to observe a significant field-dependence of the tunneling current
for impurities located several layers below the GaAs surface.Comment: Non
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