Optical detection and modulation at 2µm-2.5µm in silicon

Recently the 2µm wavelength region has emerged as an exciting prospect for the next generation of telecommunications. In this paper we experimentally characterise silicon based plasma dispersion effect optical modulation and defect based photodetection in the 2-2.5µm wavelength range. It is shown that the effectiveness of the plasma dispersion effect is dramatically increased in this wavelength window as compared to the traditional telecommunications wavelengths of 1.3µm and 1.55µm. Experimental results from the defect based photodetectors show that detection is achieved in the 2-2.5µm wavelength range, however the responsivity is reduced as the wavelength is increased away from 1.55µm

Impurity-free seeded crystallization of amorphous silicon by nanoindentation

We demonstrate that nanoindents formed in amorphous Si films, with dimensions as small as ∼20 nm, provide a means to seed solid phase crystallization. During post-indentation annealing at ∼600 °C, solid phase crystallization initiates from the indented sites, effectively removing the incubation time for random nucleation in the absence of seeds. The seeded crystallization is studied by optical microscopy, cross-sectional transmission electron microscopy, and electrical characterization via Hall measurements. Full crystallization can be achieved, with improved electrical characteristics attributed to the improved microstructure, using a lower thermal budget. The process is metal contaminant free and allows for selective area crystallization.The authors gratefully acknowledge financial support from the Australian Research Council and the Natural Sciences and Engineering Research Council of Canada

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm

The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency measurements with such a device is presented. A jitter of 300 ps was measured, and preliminary tests on after-pulsing showed only a small increase (a factor of 2) in the normalized dark count rate when the gating frequency was increased from 1 kHz to 1 MHz. These initial results suggest that optimized devices integrated on Si substrates could potentially provide performance comparable to or better than that of many commercially available discrete technologies

Trust and privacy in distributed work groups

Proceedings of the 2nd International Workshop on Social Computing, Behavioral Modeling and PredictionTrust plays an important role in both group cooperation and economic exchange. As new technologies emerge for communication and exchange, established mechanisms of trust are disrupted or distorted, which can lead to the breakdown of cooperation or to increasing fraud in exchange. This paper examines whether and how personal privacy information about members of distributed work groups influences individuals' cooperation and privacy behavior in the group. Specifically, we examine whether people use others' privacy settings as signals of trustworthiness that affect group cooperation. In addition, we examine how individual privacy preferences relate to trustworthy behavior. Understanding how people interact with others in online settings, in particular when they have limited information, has important implications for geographically distributed groups enabled through new information technologies. In addition, understanding how people might use information gleaned from technology usage, such as personal privacy settings, particularly in the absence of other information, has implications for understanding many potential situations that arise in pervasively networked environments.Preprin

Effect of catalyst layer defects on local membrane degradation in polymer electrolyte fuel cells

© 2016 Elsevier B.V. All rights reserved. Aiming at durability issues of fuel cells, this research is dedicated to a novel experimental approach in the analysis of local membrane degradation phenomena in polymer electrolyte fuel cells, shedding light on the potential effects of manufacturing imperfections on this process. With a comprehensive review on historical failure analysis data from field operated fuel cells, local sources of iron oxide contaminants, catalyst layer cracks, and catalyst layer delamination are considered as potential candidates for initiating or accelerating the local membrane degradation phenomena. Customized membrane electrode assemblies with artificial defects are designed, fabricated, and subjected to membrane accelerated stress tests followed by extensive post-mortem analysis. The results reveal a significant accelerating effect of iron oxide contamination on the global chemical degradation of the membrane, but dismiss local traces of iron oxide as a potential stressor for local membrane degradation. Anode and cathode catalyst layer cracks are observed to have negligible impact on the membrane degradation phenomena. Notably however, distinct evidence is found that anode catalyst layer delamination can accelerate local membrane thinning, while cathode delamination has no apparent effect. Moreover, a substantial mitigating effect for platinum residuals on the site of delamination is observed

Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels

Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above. The electrical properties of these structures are poor, and thought to be associated with grown-in point defects as indicated in positron annihilation spectroscopy. However, after an in situ annealing procedure (800 °C for 30 min) the electrical properties dramatically improve, giving an optimum 4 K mobility of 2500 cm2 V – 1 s – 1 for a sheet density of 6.2 × 1011 cm – 2. The low temperature growth yields highly planar interfaces, which are maintained after anneal as evidenced from transmission electron microscopy. This and secondary ion mass spectroscopy measurements demonstrate that the metastably strained alloy layer can endure the in situ anneal procedure necessary for enhanced electrical properties. Further studies have shown that the layers can also withstand a 120 min thermal oxidation at 800 °C, commensurate with metal–oxide–semiconductor device fabrication

Magnetic resonance imaging findings in children with Parry-Romberg syndrome and en coup de sabre

BACKGROUND: The aim of this study was to: (i) describe the abnormalities seen on brain imaging in a group of children with en coup de sabre (EDCS) with/without Parry-Romberg syndrome (PRS); and (ii) identify clinical predictors of brain imaging abnormalities. METHODS: This was a single centre (Great Ormond Street Hospital, London) retrospective case series of patients with ECDS/PRS seen from 2000 to 2018. We identified patients with cutaneous manifestations consistent with the clinical descriptions of ECDS/PRS. Presenting clinical, laboratory, and radiological brain findings are described. Results are expressed as medians and ranges or frequencies and percentages. Fisher's exact test was used to identify clinical associations with magnetic resonance imaging (MRI) abnormalities. RESULTS: Fourteen patients were studied: 6 males and 8 females; median age 14 years (range 3-20). We observed neuroimaging abnormalities in 2/6 ECDS and 5/8 ECDS/PRS patients. White matter signal abnormality, dystrophic calcification, leptomeningeal enhancement, and sulcal crowding were the typical findings on brain imaging. A total of 50% of patients had no MRI abnormality despite some of these patients having neurological symptoms. The presence of seizures was significantly associated with ipsilateral enhanced white matter signalling on MRI (p < 0.05). CONCLUSIONS: In summary, we observed several distinct radiographic patterns associated with ECDS/PRS. Seizure disorder was strongly associated with the presence of ipsilateral enhanced white matter signalling. Improved neuroimaging techniques that combine morphological with functional imaging may improve the detection rate of brain involvement in children with ECDS/PRS in the future

Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon

The conductivity mobility for majority carrier holes in compensated p-type silicon is determined by combined measurement of the resistivity and the net doping, the latter via electrochemical capacitance-voltage measurements. The minority electron mobility was also measured with a technique based on measurements of surface-limited effective carrier lifetimes. While both minority and majority carrier mobilities are found to be significantly reduced by compensation, the impact is greater on the minority electron mobility. The Hall factor, which relates the Hall mobility to the conductivity mobility, has also been determined using the Hall method combined with the capacitance-voltage measurements. Our results indicate a similar Hall factor in both compensated and noncompensated samples.This work was supported by the Australian Research Council ARC and by the DAAD/Go8 researcher exchange funding scheme