The power of controversy: the role of brand loyalty

Consumers are increasingly pressuring brands to take a stand on sociopolitical issues. Since the underlying risks and benefits for companies have not yet been thoroughly researched, managers do not want to risk alienating consumers who disagree with their position. This study hypothesizes that brand loyalty mitigates the negative effects of controversy when people disagree with the brand’s statement. The results did not reveal a significant effect of brand loyalty on purchase intention when people oppose their opinion. However, it was confirmed that loyal consumers have higher purchase intentions compared to non-loyal ones for both controversial and non-controversial brand statements

Looking at Localized Excitons in Quantum Structures: A Theoretical Description

We present a theory of scanning local optical spectroscopy in quantum structures taking into account structural disorder. The calculated spatially resolved spectra show the individual spectral lines from the exciton states localized by the disordered potential as well as the quasicontinua spectra at positions close to the potential barriers in agreement with the experimental findings

ZnSe-based laser diodes with quaternary CdZnSSe quantum wells as active region:-Chances and limitations-

Light emitting devices based on the material system ZnSe provide the unique possibility to produce emission in the blue-green visible spectrum. However, an insufficient lifetime is the main obstacle for commercialization so far, which is connected to the stability of the active region, the Cd-containing quantum well. In this work, ZnSe-based laser diodes with quaternary CdZnSSe quantum wells are investigated.:p:First, the material system ZnSe and the applied experimental techniques are introduced. The third chapter focuses on the degradation mechanism of the devices. A mechanism based on recombination enhanced defect reactions is found to be the dominating process, which is driven by the diffusion of Cd, as well, as the accumulation of heat. Experimental approaches to improve the stability of the quantum well are explored, where the use of tensile strained ZnSSe barriers shows promising results. Under high current injection levels in pulsed-mode, a new degradation mechanism is observed for the first time: catastrophic optical damage.:p:Next, the unique possibilities of CdZnSSe quantum wells are investigated in terms of high Cd contents, which allow light emission around 560 nm and are therefore suitable for plastic optical fibers. Laser diodes with an emission at 560 nm are fabricated for the first time, exhibiting operation in cw-mode and output powers above 1.1 W in pulsed mode. :p:Finally, a novel approach with a fivefold stack of CdSe quantum dots as active region is tested and lasing with a threshold current density of 7.5 kA/cm:sup:2:/sup:, is observed for the first time. A surprisingly high stability of the devices is noted. In pulsed-mode, current densities as high as 20 kA/cm:sup:2:/sup: are sustained, in DC-mode operation at 2.5 kA/cm:sup:2:/sup: with more than 100 h is possible. Degradation experiments indicate a greatly increased stability as compared to quantum well laser diodes emitting in the same spectral region

ZnSe-basierte Laserdioden mit quaternären CdZnSSe Quantentrögen als aktive Region:-Möglichkeiten und Begrenzungen-

Light emitting devices based on the material system ZnSe provide the unique possibility to produce emission in the blue-green visible spectrum. However, an insufficient lifetime is the main obstacle for commercialization so far, which is connected to the stability of the active region, the Cd-containing quantum well. In this work, ZnSe-based laser diodes with quaternary CdZnSSe quantum wells are investigated.:p:First, the material system ZnSe and the applied experimental techniques are introduced. The third chapter focuses on the degradation mechanism of the devices. A mechanism based on recombination enhanced defect reactions is found to be the dominating process, which is driven by the diffusion of Cd, as well, as the accumulation of heat. Experimental approaches to improve the stability of the quantum well are explored, where the use of tensile strained ZnSSe barriers shows promising results. Under high current injection levels in pulsed-mode, a new degradation mechanism is observed for the first time: catastrophic optical damage.:p:Next, the unique possibilities of CdZnSSe quantum wells are investigated in terms of high Cd contents, which allow light emission around 560 nm and are therefore suitable for plastic optical fibers. Laser diodes with an emission at 560 nm are fabricated for the first time, exhibiting operation in cw-mode and output powers above 1.1 W in pulsed mode. :p:Finally, a novel approach with a fivefold stack of CdSe quantum dots as active region is tested and lasing with a threshold current density of 7.5 kA/cm:sup:2:/sup:, is observed for the first time. A surprisingly high stability of the devices is noted. In pulsed-mode, current densities as high as 20 kA/cm:sup:2:/sup: are sustained, in DC-mode operation at 2.5 kA/cm:sup:2:/sup: with more than 100 h is possible. Degradation experiments indicate a greatly increased stability as compared to quantum well laser diodes emitting in the same spectral region