Extended excitons and compact heliumlike biexcitons in type-II quantum dots.

We have used magneto-photoluminescence measurements to establish that InP/GaAs quantum dots have a type-II band (staggered) alignment. The average excitonic Bohr radius and the binding energy are estimated to be 15 nm and 1.5 meV respectively. When compared to bulk InP, the excitonic binding is weaker due to the repulsive (type-II) potential at the hetero-interface. The measurements are extended to over almost six orders of magnitude of laser excitation powers and to magnetic fields of up to 50 tesla. It is shown that the excitation power can be used to tune the average hole occupancy of the quantum dots, and hence the strength of the electron-hole binding. The diamagnetic shift coe±cient is observed to drastically reduce as the quantum dot ensemble makes a gradual transition from a regime where the emission is from (hydrogen-like) two-particle excitonic states to a regime where the emission from (helium-like) four-particle biexcitonic states also become significant

Second-order calculation of the local density of states above a nanostructured surface

We have numerically implemented a perturbation series for the scattered electromagnetic fields above rough surfaces, due to Greffet, allowing us to evaluate the local density of states to second order in the surface profile function. We present typical results for thermal near fields of surfaces with regular nanostructures, investigating the relative magnitude of the contributions appearing in successive orders. The method is then employed for estimating the resolution limit of an idealized Near-Field Scanning Thermal Microscope (NSThM).Comment: 10 pages, 7 figure

A model for exciton-polaritons in uniaxial molecular crystals describing spatial dispersion, refraction and reflection

Propagation of light through a uniaxial material is studied using field theoretical methods. The materials is modeled by cubic lattice of oriented classical Lorentz oscillators. A two-step coarse graining approach is applied. At the bulk level, excitations of the coupled light-matter system, or polaritons, are described by a Proca-type equation for massive vector bosons. On the microscopic level, multiple scattering is used to relate the sub-luminal speed of the polaritons to the polarizability of the Lorentz oscillators. For each direction of propagation of the polaritons, three independent polarizations exist, consistent with the integer spin of massive vector bosons. Reflection and refraction are calculated by imposing the requirement of a uniform gauge for the electromagnetic vector potential across the interface of the uniaxial molecular material and vacuum. Reflectance spectra near the resonance frequency are calculated. The spectra feature a characteristic minimum in middle of the reflection band, in agreement with experiment. An incident unpolarized light beam is predicted to refract into three different rays. The model supports surface bound excitations and predicts a Goos-Haenchen shift of the reflected beam upon reflection of light incident from vacuum onto the material.Comment: 55 pages, 9 figure

Evidence for As lattice location and Ge bound exciton luminescence in ZnO implanted with 73As and 73Ge

The results of photoluminescence (PL) measurements performed on high quality single crystal ZnO implanted with radioactive 73Ga and 73As, both of which decay to stable 73Ge, are presented. Identical effects are observed in the two cases, with a sharp line at 3.3225(5) eV found to grow in intensity in accordance with the growth rate of the Ge daughter atom populations. On the strength of the well-established result that Ga occupies Zn sites, we conclude from the identical outcomes for 73Ga and 73As implantations that implanted As also preferentially occupies Zn sites. This result supports the findings of others that As preferentially occupies the Zn rather than the O site in ZnO. The thermal quenching energy of the 3.3225(5) eV line is found to be only 2.9(1) meV in contrast to its large spectral shift of 53.4(1) meV with respect to the lowest energy free exciton. The PL is attributed to exciton recombination at neutral Ge double donors on Zn sites involving transitions that leave the donor in an excited state

Modulational instability and solitons in excitonic semiconductor waveguides

Nonlinear light propagation in a single-mode micron-size waveguide made of semiconducting excitonic material has been theoretically studied in terms of exciton-polaritons by using an analysis based on macroscopic fields. When a light pulse is spectrally centered in the vicinity of the ground-state Wannier exciton resonance, it interacts with the medium nonlinearly. This optical cubic nonlinearity is caused by the repulsive exciton-exciton interactions in the semiconductor, and at resonance it is orders of magnitude larger than the Kerr nonlinearity (e.g., in silica). We demonstrate that a very strong and unconventional modulational instability takes place, which has not been previously reported. After reducing the problem to a single nonlinear Schr\"odinger-like equation, we also explore the formation of solitary waves both inside and outside the polaritonic gap and find evidence of spectral broadening. A realistic physical model of the excitonic waveguide structure is proposed.Comment: 7 pages (2-column), 7 figure

Effect of polycrystallinity on the optical properties of highly oriented ZnO grown by pulsed laser deposition

We report the results of photoluminescence and reflectance measurements on highly c-axis oriented polycrystalline ZnO grown by pulsed laser deposition. The samples measured were grown under identical conditions and were annealed in-situ at various temperatures for 10-15 min. The band-edge photoluminescence spectra of the material altered considerably with an increase in grain size, with increased free exciton emission and observable excitonic structure in the reflectance spectra. The green band emission also increased with increasing grain size. A deformation potential analysis of the effect of strain on the exciton energy positions of the A- and B-excitons demonstrated that the experimental exciton energies could not be explained solely in terms of sample strain. We propose that electric fields in the samples due to charge trapping at grain boundaries are responsible for the additional perturbation of the excitons. This interpretation is supported by theoretical estimates of the exciton energy perturbation due to electric fields. The behaviour of the green band in the samples provides additional evidence in favour of our model

First-order spatial coherence of excitons in planar nanostructures: a k-filtering effect

We propose and analyze a k-filtering effect which gives rise to the drastic difference between the actual spatial coherence length of quasi-two-dimensional (quasi-2D) excitons or microcavity (MC) polaritons in planar nanostructures and that inferred from far-field optical measurements. The effect originates from the conservation of in-plane wavevector k in the optical decay of the particles in outgoing bulk photons. The k-filtering effect explains the large coherence lengths recently observed for indirect excitons in coupled quantum wells (QWs), but is less pronounced for MC polaritons at low temperatures, T<10K

Field emission in ordered arrays of ZnO nanowires prepared by nanosphere lithography and extended Fowler-Nordheim analyses

A multistage chemical method based on nanosphere lithography was used to produce hexagonally patterned arrays of ZnO vertical nanowires, with 1 lm interspacing and aspect ratio 20, with a view to study the effects of emitter uniformity on the current emitted upon application of a dc voltage across a 250 lm vacuum gap. A new treatment, based on the use of analytical expressions for the image-potential correction functions, was applied to the linear region below 2000 V of the Fowler-Nordheim (FN) plot and showed the most suitable value of the work function / in the range 3.3–4.5 eV (conduction band emission) with a Schottky lowering parameter y ~ 0.72 and a field enhancement factor c in the 700–1100 range. A modeled c value of 200 was calculated for an emitter shape of a prolate ellipsoid of revolution and also including the effect of nanowire screening, in fair agreement with the experimental value. The Fowler-Nordheim current densities and effective emission areas were derived as 1011 Am2 and 1017 m2, respectively, showing that field emission likely takes place in an area of atomic dimensions at the tip of the emitter. Possible causes for the observed departure from linear FN plot behavior above 2000 V were discussed

Random Scattering by Atomic Density Fluctuations in Optical Lattices

We investigate hitherto unexplored regimes of probe scattering by atoms trapped in optical lattices: weak scattering by effectively random atomic density distributions and multiple scattering by arbitrary atomic distributions. Both regimes are predicted to exhibit a universal semicircular scattering lineshape for large density fluctuations, which depend on temperature and quantum statistics.Comment: 4 pages, 2 figure