Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction

The electronic and vibrational density of states of a semiconducting carbon nanotube in a crossed junction was investigated by elastic and inelastic scanning tunneling spectroscopy. The strong radial compression of the nanotube at the junction induces local metallization spatially confined to a few nm. The local electronic modifications are correlated with the observed changes in the radial breathing and G-band phonon modes, which react very sensitively to local mechanical deformation. In addition, the experiments reveal the crucial contribution of the image charges to the contact potential at nanotube-metal interfaces

Towards the spatial resolution of metalloprotein charge states by detailed modeling of XFEL crystallographic diffraction.

Oxidation states of individual metal atoms within a metalloprotein can be assigned by examining X-ray absorption edges, which shift to higher energy for progressively more positive valence numbers. Indeed, X-ray crystallography is well suited for such a measurement, owing to its ability to spatially resolve the scattering contributions of individual metal atoms that have distinct electronic environments contributing to protein function. However, as the magnitude of the shift is quite small, about +2 eV per valence state for iron, it has only been possible to measure the effect when performed with monochromated X-ray sources at synchrotron facilities with energy resolutions in the range 2-3 × 10-4 (ΔE/E). This paper tests whether X-ray free-electron laser (XFEL) pulses, which have a broader bandpass (ΔE/E = 3 × 10-3) when used without a monochromator, might also be useful for such studies. The program nanoBragg is used to simulate serial femtosecond crystallography (SFX) diffraction images with sufficient granularity to model the XFEL spectrum, the crystal mosaicity and the wavelength-dependent anomalous scattering factors contributed by two differently charged iron centers in the 110-amino-acid protein, ferredoxin. Bayesian methods are then used to deduce, from the simulated data, the most likely X-ray absorption curves for each metal atom in the protein, which agree well with the curves chosen for the simulation. The data analysis relies critically on the ability to measure the incident spectrum for each pulse, and also on the nanoBragg simulator to predict the size, shape and intensity profile of Bragg spots based on an underlying physical model that includes the absorption curves, which are then modified to produce the best agreement with the simulated data. This inference methodology potentially enables the use of SFX diffraction for the study of metalloenzyme mechanisms and, in general, offers a more detailed approach to Bragg spot data reduction

Kondo effect of Co adatoms on Ag monolayers on noble metal surfaces

The Kondo temperature $T_K$ of single Co adatoms on monolayers of Ag on Cu and Au(111) is determined using Scanning Tunneling Spectroscopy. $T_K$ of Co on a single monolayer of Ag on either substrate is essentially the same as that of Co on a homogenous Ag(111) crystal. This gives strong evidence that the interaction of surface Kondo impurities with the substrate is very local in nature. By comparing $T_K$ found for Co on Cu, Ag, and Au (111)-surfaces we show that the energy scale of the many-electron Kondo state is insensitive to the properties of surface states and to the energetic position of the projected bulk band edges.Comment: 4 pages, 3 figure

Quantum Coherence of Image-Potential States

The quantum dynamics of the two-dimensional image-potential states in front of the Cu(100) surface is measured by scanning tunneling microscopy (STM) and spectroscopy (STS). The dispersion relation and the momentum resolved phase-relaxation time of the first image-potential state are determined from the quantum interference patterns in the local density of states (LDOS) at step edges. It is demonstrated that the tip-induced Stark shift does not affect the motion of the electrons parallel to the surface.Comment: Submitted to Phys. Rev. Lett., 4 pages, 4 figures; corrected typos, minor change

Role of pseudospin in quasiparticle interferences in epitaxial graphene probed by high-resolution scanning tunneling microscopy

Pseudospin, an additional degree of freedom related to the honeycomb structure of graphene, is responsible of many of the outstanding electronic properties found in this material. This article provides a clear understanding of how such pseudospin impacts the quasiparticle interferences of monolayer (ML) and bilayer (BL) graphene measured by low temperature scanning tunneling microscopy and spectroscopy. We have used this technique to map, with very high energy and space resolution, the spatial modulations of the local density of states of ML and BL graphene epitaxialy grown on SiC(0001), in presence of native disorder. We perform a Fourier transform analysis of such modulations including wavevectors up to unit-vectors of the reciprocal lattice. Our data demonstrate that the quasiparticle interferences associated to some particular scattering processes are suppressed in ML graphene, but not in BL graphene. Most importantly, interferences with 2qF wavevector associated to intravalley backscattering are not measured in ML graphene, even on the images with highest resolution. In order to clarify the role of the pseudospin on the quasiparticle interferences, we use a simple model which nicely captures the main features observed on our data. The model unambiguously shows that graphene's pseudospin is responsible for such suppression of quasiparticle interferences features in ML graphene, in particular for those with 2qF wavevector. It also confirms scanning tunneling microscopy as a unique technique to probe the pseudospin in graphene samples in real space with nanometer precision. Finally, we show that such observations are robust with energy and obtain with great accuracy the dispersion of the \pi-bands for both ML and BL graphene in the vicinity of the Fermi level, extracting their main tight binding parameters

STABILITY OF POLYNOMIALS UNDER CORRELATED COEFFICIENT PERTURBATIONS.

The robust stability of polynomials with respect to real parameter variations is investigated. The coefficients of the polynomial are assumed to be linear functions of several real parameters. An algorithm to calculate the maximum allowable variations of the parameters so the roots still remain in prescribed regions of the complex plane is presented. Examples are given to illustrate the method

Ag-coverage-dependent symmetry of the electronic states of the Pt(111)-Ag-Bi interface: The ARPES view of a structural transition

We studied by angle-resolved photoelectron spectroscopy the strain-related structural transition from a pseudomorphic monolayer (ML) to a striped incommensurate phase in an Ag thin film grown on Pt(111). We exploited the surfactant properties of Bi to grow ordered Pt(111)-xMLAg-Bi trilayers with 0 < x < 5 ML, and monitored the dispersion of the Bi-derived interface states to probe the structure of the underlying Ag film. We find that their symmetry changes from threefold to sixfold and back to threefold in the Ag coverage range studied. Together with previous scanning tunneling microscopy and photoelectron diffraction data, these results provide a consistent microscopic description of the coverage-dependent structural transition.Comment: 10 pages, 9 figure

Intercalation of graphene on SiC(0001) via ion-implantation

Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a new procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation technique. The efficiency of the working principle is demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001) with Bi atoms, which was not possible following standard procedures. Our results put forward the ion-beam lithography to nanostructure and functionalize desired graphene chips

Ultrafast photodoping and effective Fermi-Dirac distribution of the Dirac particles in Bi2Se3

We exploit time- and angle- resolved photoemission spectroscopy to determine the evolution of the out-of-equilibrium electronic structure of the topological insulator Bi2Se. The response of the Fermi-Dirac distribution to ultrashort IR laser pulses has been studied by modelling the dynamics of the hot electrons after optical excitation. We disentangle a large increase of the effective temperature T* from a shift of the chemical potential mu*, which is consequence of the ultrafast photodoping of the conduction band. The relaxation dynamics of T* and mu* are k-independent and these two quantities uniquely define the evolution of the excited charge population. We observe that the energy dependence of the non-equilibrium charge population is solely determined by the analytical form of the effective Fermi-Dirac distribution.Comment: 5 Pages, 3 Figure