Resource Guide in Exploring Ethics: A Practical Resource Guide for Tutors and Students

This resource guide will help staff and students who are studying social sciences in hospitality, tourism, entertainment, events, leisure. It outlines the ethical issues that they need to consider when conducting research for their dissertation or for industry-based projects. Social science is a general term used for the study of society, consumers, and employees, the manner in which those people behave and how it affects the world around us. Researching “people in our world” must be completed in a safe, fair and honest way. Whilst ethical policy for empirical research has been with us since the Nuremberg Code 1947, many universities have not yet developed resources in terms of practical ethical examples. This resource guide presents materials and examples for tutors of research methods, and also for undergraduate and masters students engaging in social science research. The Guide also contains background literature, power point presentations and practical examples. All social science research raises many ethical issues. Medical, sport and exercise research dealing with human enhancement, medicine, disease or gene therapy present ethical issues which will NOT be included in this resource guide. Sport and leisure research may include physical or drug-related elements which require students to conform to specific ethical procedures which can be found, in part, in the “Ethics and Sport” resource guide available via the HLST website

Burglary project

This report outlines the process and findings from an innovative project for students. This work was part of the curriculum and involved students working with West Yorkshire Police as part of the safer Leeds project in designing and making a film for students n crime prevention and personal safety in Leed

New Paradigm Technology

The rapid development of computing technology is reflected in the fact that industry has consistently doubled the number of transistors per unit area on a semiconductor wafer every two years. Essentially the basic business model of the semiconductor industry, processor and memory technology has so far continued to roughly fulfil this doubling convention, despite technological barriers and fluctuating economic conditions. Many other aspects of computing technology have followed similar exponential laws, including hard drive space and internet connection speeds. However, the expiry of such rapid development has been forecast on multiple occasions as technological hurdles become increasingly more challenging

Remembering together: the importance of shared emotional memory in event experiences

Drawing upon the wider literature in the psychology and sociology of emotions and memory this study provides new insights into the formation and role of shared emotion in the memory of event experiences. The methodology draws together several data collection methods in order to capture the complexity of emotional response. Thick data are gathered from a single case study friendship pair using a combination of short surveys, physiological measures, photo elicitation, and paired interviews to provide a detailed understanding of the experience from anticipation to recollection and reflection to response. The longitudinal data show that what was felt at the time changes considerably in recollection often becoming more intense as time passes and it is the act of sharing these memories that appears to intensify and alter them. This suggests that the often flawed and certainly mediated memory of the experience has a more influential role to play in attitude formation than previously thought. Furthermore, it is the desire for a feeling of emotional congruity that creates and strengthens this emotional response in remembering. The mediated memory of the attendee experience, therefore, has more influence on behaviour than the reality of the experience. It is recommended that event marketers use this understanding to design opportunities, beyond the experience, in which memories can be created and shared

Plasma harmonics Lissajous measurements

June 17-21 200

Light-activated resistance switching in SiOx RRAM devices

We report a study of light-activated resistance switching in silicon oxide (SiOx) resistive random access memory (RRAM) devices. Our devices had an indium tin oxide/SiOx/p-Si Metal/Oxide/ Semiconductor structure, with resistance switching taking place in a 35 nm thick SiOx layer. The optical activity of the devices was investigated by characterising them in a range of voltage and light conditions. Devices respond to illumination at wavelengths in the range of 410–650 nm but are unresponsive at 1152 nm, suggesting that photons are absorbed by the bottom p-type silicon electrode and that generation of free carriers underpins optical activity. Applied light causes charging of devices in the high resistance state (HRS), photocurrent in the low resistance state (LRS), and lowering of the set voltage (required to go from the HRS to LRS) and can be used in conjunction with a voltage bias to trigger switching from the HRS to the LRS. We demonstrate negative correlation between set voltage and applied laser power using a 632.8 nm laser source. We propose that, under illumination, increased electron injection and hence a higher rate of creation of Frenkel pairs in the oxide—precursors for the formation of conductive oxygen vacancy filaments—reduce switching voltages. Our results open up the possibility of light-triggered RRAM devices

Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory

A simple analytic model for the electron transport through filamentary-type structures in Si-rich silica (SiOx)-based resistive switches is proposed. The model is based on a mesoscopic description and is able to account for the linear and nonlinear components of conductance that arise from both fully and partially formed conductive channels spanning the dielectric film. Channels are represented by arrays of identical scatterers whose number and quantum transmission properties determine the current magnitude in the low and high resistance states. We show that the proposed model not only reproduces the experimental current-voltage (I-V) characteristics but also the normalized differential conductance (dln(I)/dln(V)-V) curves of devices under test

Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM

We present results from an imaging study of filamentary conduction in silicon suboxide resistive RAM devices. We used a conductive atomic force microscope to etch through devices while measuring current, allowing us to produce tomograms of conductive filaments. To our knowledge this is the first report of such measurements in an intrinsic resistance switching material

Nanosecond analog programming of substoichiometric silicon oxide resistive RAM

Slow access time, high power dissipation and a rapidly approaching scaling limit constitute roadblocks for existing non-volatile flash memory technologies. A new family of storage devices is needed. Filamentary resistive RAM (ReRAM) offers scalability, potentially sub-10nm, nanosecond write times and a low power profile. Importantly, applications beyond binary memories are also possible. Here we look at aspects of the electrical response to nanosecond stimuli of intrinsic resistance switching TiN/SiOx/TiN ReRAM devices. Simple sequences of identical pulses switch devices between two or more states, leading to the possibility of simplified programmers. Impedance mismatch between the device under test and the measurement system allows us to track the electroforming process and confirm it occurs on the nanosecond timescale. Furthermore, we report behavior reminiscent of neuronal synapses (potentiation, depression and short-term memory). Our devices therefore show great potential for integration into novel hardware neural networks

High Performance Resistance Switching Memory Devices Using Spin-on Silicon Oxide

In this paper, we present high performance resistance switching memory devices (RRAM) with an SiO 2 -like active layer formed from spin-on hydrogen silsesquioxane (HSQ). Our metal-insulator-metal (MIM) devices exhibit switching voltages of less than 1 V, cycling endurances of more than 10 7 cycles without failure, electroforming below 2 V and retention time of resistance states of more than 10 5 seconds at room temperature. We also report arrays of nanoscale HSQ-based RRAM devices in the form of multilayer nanopillars with switching performance comparable to that of our thin film devices. We are able to address and program individual RRAM nanopillars using conductive atomic force microscopy. These promising results, coupled with a much easier fabrication method than traditional ultra-high vacuum based deposition techniques, make HSQ a strong candidate material for the next generation memory devices