Steady-state Raman gain in diamond as a function of pump wavelength

The variation in the Raman gain coefficient in single-crystal diamond for pump wavelengths between 355 and 1450 nm is measured. Two techniques are used: a pump-probe approach giving an absolute measurement and a stimulated Raman oscillation threshold technique giving a relative measurement. Both approaches indicate that the Raman gain coefficient is a linear function of pump wavenumber. With the pump polarized along a direction in the crystal, the Raman gain coefficient measured by the pump-probe technique is found to vary from 7.6 +/- 0.8 for a pump wavelength of 1280 nm to 78 +/- 8 cm/GW for a pump wavelength of 355 nm. With the established dependence of the Raman gain coefficient on the pump wavelength, the Raman gain coefficient can be estimated at any pump wavelength within the spectral range from 355 up to 1450 nm

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

A KGd(WO4)(2) Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5: 6W of absorbed diode pump power, and output power up to 0.8W at 1143nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157nm

Stability of Q-switched 2 μm lasers

Q-switched lasers operating at wavelengths around 2 µm have many applications including materials processing and LIDAR. However, the low gain of the quasi-three-level gain media available at 2 µm can lead to problems with pulse-to-pulse fluctuations in their output, known as jitter. Here we present a methodology for characterising the level of jitter in a Q-switched laser and apply it to a Tm:YAP system. We also look at the causes of jitter and evaluate some methods of reducing it. The methodology developed here will aid in the development and characterisation of Q-switched lasers at any wavelength

Titanium sapphire : A decade of diode-laser pumping

For many years, Ti:sapphire was the prototypical example of a solid-state laser material that could not be diode pumped. The rationale for this assessment follows from the laser properties of Ti:sapphire, which combine to demand high brightness pumping in the blue-green region (see fig. 1 [1]). The development of efficient Gallium Nitride (GaN) based laser diodes eroded this logic [2], and improvements in the spatial brightness of GaN diode lasers subsequently enabled the first demonstration of a directly diode-laser pumped Ti:sapphire laser in 2009 [3], This presentation will outline the physics that makes diode-pumping difficult, and the developments that mean, it is, nonetheless, possible. Interestingly, diode-pumping of CW and modelocked Ti:sapphire lasers was achieved not by a radical redesign of the laser, but by careful optimisation of existing approaches that enabled the rapidly improving brightness of GaN diode lasers to be exploited [3-5]

Ultrafast diode-pumped Ti:sapphire laser with broad tunability

We report a broadly wavelength-tunable femtosecond diode-pumped Ti:sapphire laser, passively mode-locked using both semiconductor saturable absorber mirror (SESAM) and Kerr-lens mode-locking (KLM) techniques. Using two pump laser diodes (operating at 450 nm), an average output power as high as 433 mW is generated during mode-locking with the SESAM. A tunability range of 37 nm (788-825 nm) was achieved with the shortest pulse duration of 62 fs at 812 nm. In the KLM regime, an average output power as high as 382 mW, pulses as short as 54 fs, and a tunability of 120 nm (755-875 nm) are demonstrated

1.4 µm continuous-wave diamond Raman laser

The longest wavelength (~1.4 µm) emitted by a diamond Raman laser pumped by a semiconductor disk laser (SDL) is reported. The output power of the intracavity-pumped Raman laser reached a maximum of 2.3 W with an optical conversion efficiency of 3.4% with respect to the absorbed diode pump power. Narrow Stokes emission (FWHM 40 nm was achieved via rotation of an intracavity birefringent filter that tuned the SDL oscillation wavelength

A broadly tunable ultrafast diode-pumped Ti:sapphire laser

We report a diode-pumped ultrafast Ti:sapphire laser tunable over a 50 nm range. Sub-100 fs pulses are generated at a pulse repetition rate of 139 MHz with a maximum average output power of 430 mW

Intracavity Raman conversion of a red semiconductor disk laser using diamond

We demonstrate a diamond Raman laser intracavity-pumped by a red semiconductor disk laser (~675 nm) for laser emission at around 740 nm. Output power up to 82 mW of the Stokes-shifted field was achieved, limited by the available pump power, with an output coupling of 1.5%. We also report wavelength tuning of the diamond Raman laser over 736 - 750 nm