Optical Gain in Carbon Nanotubes

Semiconducting single-wall carbon nanotubes (s-SWNTs) have proved to be promising material for nanophotonics and optoelectronics. Due to the possibility of tuning their direct band gap and controlling excitonic recombinations in the near-infrared wavelength range, s-SWNT can be used as efficient light emitters. We report the first experimental demonstration of room temperature intrinsic optical gain as high as 190 cm-1 at a wavelength of 1.3 {\mu}m in a thin film doped with s-SWNT. These results constitute a significant milestone toward the development of laser sources based on carbon nanotubes for future high performance integrated circuits.Comment: 4 figure

Ultrafast Optical Spectroscopy of Micelle-Suspended Single-Walled Carbon Nanotubes

We present results of wavelength-dependent ultrafast pump-probe experiments on micelle-suspended single-walled carbon nanotubes. The linear absorption and photoluminescence spectra of the samples show a number of chirality-dependent peaks, and consequently, the pump-probe results sensitively depend on the wavelength. In the wavelength range corresponding to the second van Hove singularities (VHSs), we observe sub-picosecond decays, as has been seen in previous pump-probe studies. We ascribe these ultrafast decays to intraband carrier relaxation. On the other hand, in the wavelength range corresponding to the first VHSs, we observe two distinct regimes in ultrafast carrier relaxation: fast (0.3-1.2 ps) and slow (5-20 ps). The slow component, which has not been observed previously, is resonantly enhanced whenever the pump photon energy resonates with an interband absorption peak, and we attribute it to radiative carrier recombination. Finally, the slow component is dependent on the pH of the solution, which suggests an important role played by H$^+$ ions surrounding the nanotubes.Comment: 6 pages, 8 figures, changed title, revised, to be published in Applied Physics

Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors

Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic nanotubes is confirmed by optical absorption, Raman measurements, and electrical measurements. This outstanding result was made possible in particular by ultracentrifugation (150 000 g) of solutions prepared from SWNT powders using polyfluorene as an extracting agent in toluene. Such s-SWNTs processable solutions were applied to realize FET, embodying randomly or preferentially oriented nanotube networks prepared by spin coating or dielectrophoresis. Devices exhibit stable p-type semiconductor behavior in air with very promising characteristics. The on-off current ratio is 10^5, the on-current level is around 10 $\mu$A, and the estimated hole mobility is larger than 2 cm2 / V s

Frenkel and charge transfer excitons in C60

We have studied the low energy electronic excitations of C60 using momentum dependent electron energy-loss spectroscopy in transmission. The momentum dependent intensity of the gap excitation allows the first direct experimental determination of the energy of the 1Hg excitation and thus also of the total width of the multiplet resulting from the gap transition. In addition, we could elucidate the nature of the following excitations - as either Frenkel or charge transfer excitons.Comment: RevTEX, 3 Figures, to appear in Phys. Rev.

Feshbach shape resonance for high Tc superconductivity in superlattices of nanotubes

The case of a Feshbach shape resonance in the pairing mechanism for high T c superconductivity in a crystalline lattice of doped metallic nanotubes is described. The superlattice of doped metallic nanotubes provides a superconductor with a strongly asymmetric gap. The disparity and different spatial locations of the wave functions of electrons in different subbands at the Fermi level should suppress the single electron impurity interband scattering giving multiband superconductivity in the clean limit. The Feshbach resonances will arise from the component single-particle wave functions out of which the electron pair wave function is constructed: pairs of wave functions which are time inverse of each other. The Feshbach shape resonance increases the critical temperature by tuning the chemical potential at the Lifshitz electronic topological transition (ETT) where the Fermi surface of one of the bands changes from the one dimensional (1D) to the two dimensional (2D) topology (1D/2D ETT).Comment: 6 pages, 4 figure

Optical microcavity with semiconducting single-wall carbon nanotubes

We report studies of optical Fabry-Perot microcavities based on semiconducting single-wall carbon nanotubes with a quality factor of 160. We experimentally demonstrate a huge photoluminescence signal enhancement by a factor of 30 in comparison with the identical film and by a factor of 180 if compared with a thin film containing non-purified (8,7) nanotubes. Futhermore, the spectral full-width at half-maximum of the photo-induced emission is reduced down to 8 nm with very good directivity at a wavelength of about 1.3 $\mu$m. Such results prove the great potential of carbon nanotubes for photonic applications

Interaction of solid organic acids with carbon nanotube field effect transistors

A series of solid organic acids were used to p-dope carbon nanotubes. The extent of doping is shown to be dependent on the pKa value of the acids. Highly fluorinated carboxylic acids and sulfonic acids are very effective in shifting the threshold voltage and making carbon nanotube field effect transistors to be more p-type devices. Weaker acids like phosphonic or hydroxamic acids had less effect. The doping of the devices was accompanied by a reduction of the hysteresis in the transfer characteristics. In-solution doping survives standard fabrication processes and renders p-doped carbon nanotube field effect transistors with good transport characteristics.Comment: 5 pages, 4 figures, 1 tabl

Charge transfer and Fermi level shift in p-doped single-walled carbon nanotubes

The electronic properties of p-doped single-walled carbon nanotube (SWNT) bulk samples were studied by temperature-dependent resistivity and thermopower, optical reflectivity, and Raman spectroscopy. These all give consistent results for the Fermi level downshift (Delta E(F)) induced by doping. We find Delta E(F) approximate to 0.35 eV and 0.50 eV for concentrated nitric and sulfuric acid doping respectively. With these values, the evolution of Raman spectra can be explained by variations in the resonance condition as E(F) moves down into the valence band. Furthermore, we find no evidence for diameter-selective doping, nor any distinction between doping responses of metallic and semiconducting tubes

Hybrid chemical vapor deposition enables scalable and stable Cs-FA mixed cation perovskite solar modules with a designated area of 91.8 cm2 approaching 10% efficiency

The development of scalable deposition methods for stable perovskite layers is a prerequisite for the development and future commercialization of perovskite solar modules. However, there are two major challenges, i.e., scalability and stability. In sharp contrast to a previous report, here we develop a fully vapor based scalable hybrid chemical vapor deposition (HCVD) process for depositing Cs-formamidinium (FA) mixed cation perovskite films, which alleviates the problem encountered when using conventional solution coating of mainly methylammonium lead iodide (MAPbI3). Using our HCVD method, we fabricate perovskite films of Cs0.1FA0.9PbI2.9Br0.1 with enhanced thermal and phase stabilities, by the intimate incorporation of Cs into FA based perovskite films. In addition, the SnO2 electron transport layer (ETL) (prepared by sputter deposition) is found to be damaged during the HCVD process. In combination with precise interface engineering of the SnO2 ETL, we demonstrate relatively large area solar modules with efficiency approaching 10% and with a designated area of 91.8 cm2 fabricated on 10 cm × 10 cm substrates (14 cells in series). On the basis of our preliminary operational stability tests on encapsulated perovskite solar modules, we extrapolated that the T80 lifetime is approximately 500 h (under the light illumination of 1 sun and 25 °C)