Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs/AlAs multiple quantum wells

We present an optical study of beryllium delta-doped GaAs/AlAs multiple quantum well (QW) structures designed for sensing terahertz (THz) radiation. Photoreflectance (PR), surface photovoltage (SPV), and wavelength-modulated differential surface photovoltage (DSPV) spectra were measured in the structures with QW widths ranging from 3 to 20 nm and doping densities from 2×10(10) to 5×10(12) cm(–2) at room temperature. The PR spectra displayed Franz-Keldysh oscillations which enabled an estimation of the electric-field strength of ~20 kV/cm at the sample surface. By analyzing the SPV spectra we have determined that a buried interface rather than the sample surface mainly governs the SPV effect. The DSPV spectra revealed sharp features associated with excitonic interband transitions which energies were found to be in a good agreement with those calculated including the nonparabolicity of the energy bands. The dependence of the exciton linewidth broadening on the well width and the quantum index has shown that an average half monolayer well width fluctuations is mostly predominant broadening mechanism for QWs thinner than 10 nm. The line broadening in lightly doped QWs, thicker than 10 nm, was found to arise from thermal broadening with the contribution from Stark broadening due to random electric fields of the ionized impurities in the structures. We finally consider the possible influence of strong internal electric fields, QW imperfections, and doping level on the operation of THz sensors fabricated using the studied structures. © 2005 American Institute of Physic

Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors

We present a photoreflectance (PR) study of multi-layer InAs quantum dot (QD) photodetector structures, incorporating InGaAs overgrown layers and positioned asymmetrically within GaAs/AlAs quantum wells (QWs). The influence of the back-surface reflections on the QD PR spectra is explained and a temperature-dependent photomodulation mechanism is discussed. The optical interband transitions originating from the QD/QW ground- and excited-states are revealed and their temperature behaviour in the range of 3–300 K is established. In particular, we estimated the activation energy (∼320 meV) of exciton thermal escape from QD to QW bound-states at high temperatures. Furthermore, from the obtained Varshni parameters, a strain-driven partial decomposition of the InGaAs cap layer is determined

Temperature-dependent modulated reflectance and photoluminescence of InAs-GaAs and InAs-InGaAs-GaAs quantum dot heterostructures

Optical transitions and electronic properties of epitaxial InAs quantum dots (QDs) grown with and without InGaAs strain-relieving capping layer within GaAs/AlAs quantum well (QW) are investigated. Modulated reflectance and photoluminescence spectroscopy is used to probe the QD- and QW-related interband optical transitions over the temperature range of 3–300 K. The observed spectral features in QDs are identified using numerical calculations in a framework of 8-band k⋅p k⋅p method. It is found that covering the dots by a 5 nm-thick InGaAs layer yields the energy red-shift of ground-state transition by ∼150 meV ∼150 meV . Moreover, the analysis of interband transition energy dependence on temperature using Varshni expression shows that material composition of InAs QDs significantly changes due to Ga/In interdiffusion. A comparison of emission- and absorption-type spectroscopy applied for InAs–GaAs QDs indicates a Stokes shift of ∼0.02 meV ∼0.02 meV above 150 K temperature

Molecular epidemiology of Group B streptococci in Lithuania identifies multi-drug resistant clones and sporadic ST1 serotypes Ia and Ib

Streptococcus agalactiae (Group B Streptococcus, GBS) is a leading cause of neonatal infections. Yet, detailed assessment of the genotypic and phenotypic factors associated with GBS carriage, mother-to-baby transmission, and GBS infection in neonates and adults is lacking. Understanding the distribution of GBS genotypes, including the predominance of different serotypes, antimicrobial resistance (AMR) genes, and virulence factors, is likely to help to prevent GBS diseases, as well as inform estimates of the efficacy of future GBS vaccines. To this end, we set out to characterise GBS isolates collected from pregnant and non-pregnant women in Kaunas region in Lithuania. Whole genome sequences of 42 GBS isolates were analysed to determine multi-locus sequence typing (MLST), the presence of acquired AMR and surface protein genes, and the phylogenetic relatedness of isolates. We identified serotypes Ia (42.9%, 18/42), III (33.3%, 14/42), V (21.4%, 9/42), and a single isolate of serotype Ib. Genomic analyses revealed high diversity among isolates, with 18 sequence types (STs) identified, including three novel STs. 85.7% (36/42) of isolates carried at least one AMR gene: tetM or tetO (35/42), ermB or lsaC (8/42) and ant6-Ia and aph3-III (2/42). This study represents the first genomic analysis of GBS isolated from women in Lithuania and contributes to an improved understanding of the global spread of GBS genotypes and phenotypes, laying the foundations for future GBS surveillance in Lithuania

Polarized photoreflectance and photoluminescence spectroscopy of InGaAs/GaAs quantum rods grown with As2 and As4 sources

We report photoreflectance (PR) and photoluminescence (PL) investigations of the electronic and polarization properties of different aspect ratio (height/diameter) InGaAs quantum rods (QRs) embedded in InGaAs quantum wells (QWs). These nanostructures were grown by molecular beam epitaxy using As2 or As4 sources. The impact of the As source on the spectral and polarization features of the QR- and QW-related interband transitions was investigated and explained in terms of the carrier confinement effects caused by variation of composition contrast between the QR material and the surrounding well. Polarized PR and PL measurements reveal that the polarization has a preferential direction along the [ 110] crystal axis with a large optical anisotropy of about 60% in the (001) plane for high aspect ratio (4.1:1) InGaAs QRs. As a result, in PL spectra, the transverse magnetic mode dominated (110)-cleaved surfaces (TM[001] > TE[110]), whereas the transverse electric mode prevailed for (110)-cleaved surfaces (TM[001] < TE[110] ¯ ). This strong optical anisotropy in the (001) plane is interpreted in terms of the hole wavefunction orientation along the [ 110] direction for high aspect ratio QRs

Labeled EF-Tus for rapid kinetic studies of pretranslocation complex formation

The universally conserved translation elongation factor EF-Tu delivers aminoacyl(aa)-tRNA in the form of an aa-tRNA·EF-Tu·GTP ternary complex (TC) to the ribosome where it binds to the cognate mRNA codon within the ribosomal A-site, leading to formation of a pretranslocation (PRE) complex. Here we describe preparation of QSY9 and Cy5 derivatives of the variant E348C-EF-Tu that are functional in translation elongation. Together with fluorophore derivatives of aa-tRNA and of ribosomal protein L11, located within the GTPase associated center (GAC), these labeled EF-Tus allow development of two new FRET assays that permit the dynamics of distance changes between EF-Tu and both L11 (Tu-L11 assay) and aa-tRNA (Tu-tRNA assay) to be determined during the decoding process. We use these assays to examine: (i) the relative rates of EF-Tu movement away from the GAC and from aa-tRNA during decoding, (ii) the effects of the misreading-inducing antibiotics streptomycin and paromomycin on tRNA selection at the A-site, and (iii) how strengthening the binding of aa-tRNA to EF-Tu affects the rate of EF-Tu movement away from L11 on the ribosome. These FRET assays have the potential to be adapted for high throughput screening of ribosomal antibiotics