Denying What Workers Believe Are Unethical Workplace Requests: Do Workers Use Moral, Operational, or Policy Justifications Publicly?

This message-production experiment demonstrates workers’ tendency to use organizational policy justifications when publicly denying what they privately believe are unethical requests. Working adults (N = 234) responded to an unethical request from a supervisor, coworker, or subordinate. Participants avoided using explicitly moralized justifications for their noncompliance publicly and thus engaged in issue crafting. Specifically, content and statistical analyses revealed that (a) most participants invoked policy justifications to deny requests and (b) differences in hierarchical relationships were not significantly associated with policy justification frequency. These dynamics afford important face-saving functions but hold implications for the moral learning capacity of organizations. The essay concludes with implications for crafting organizational ethics policy.Yeshttps://us.sagepub.com/en-us/nam/manuscript-submission-guideline

Charge transport and trapping in Cs-doped poly(dialkoxy-p-phenylene vinylene) light-emitting diodes

Al/Cs/MDMO-PPV/ITO (where MDMO-PPV stands for poly[2-methoxy-5-(3'-7'-dimethyloctyloxy)-1,4phenylene vinylene] and ITO is indium tin oxide) light-emitting diode (LED) structures, made by physical vapor deposition of Cs on the emissive polymer layer, have been characterized by electroluminescence, current-voltage, and admittance spectroscopy. Deposition of Cs is found to improve the balance between electron and hole currents, enhancing the external electroluminescence efficiency from 0.01 cd A-1 for the bare Al cathode to a maximum of 1.3 cd A-1 for a Cs coverage of only 1.5×1014 atoms/cm2. By combining I-V and admittance spectra with model calculations, in which Cs diffusion profiles are explicitly taken into account, this effect could be attributed to a potential drop at the cathode interface due to a Cs-induced electron donor level 0.61 eV below the lowest unoccupied molecular orbital. In addition, the admittance spectra in the hole-dominated regime are shown to result from space-charge-limited conduction combined with charge relaxation in trap levels. This description allows us to directly determine the carrier mobility, even in the presence of traps. In contrast to recent literature, we demonstrate that there is no need to include dispersive transport in the description of the carrier mobility to explain the excess capacitance that is typically observed in admittance spectra of p-conjugated materials

Representational predicaments for employees: Their impact on perceptions of supervisors\u27 individualized consideration and on employee job satisfaction

A representational predicament for a subordinate vis-à-vis his or her immediate superior involves perceptual incongruence with the superior about the subordinate\u27s work or work context, with unfavourable implications for the employee. An instrument to measure the incidence of two types of representational predicament, being neglected and negative slanting, was developed and then validated through an initial survey of 327 employees. A subsequent substantive survey with a fresh sample of 330 employees largely supported a conceptual model linking being neglected and negative slanting to perceptions of low individualized consideration by superiors and to low overall job satisfaction. The respondents in both surveys were all Hong Kong Chinese. Two case examples drawn from qualitative interviews illustrate and support the conceptual model. Based on the research findings, we recommend some practical exercises to use in training interventions with leaders and subordinates. © 2013 Copyright Taylor and Francis Group, LLC

Improvements of Thermal Resistance and Thermal Stress in Quasi-Monolithic Integration Technology (QMIT) with a New Fabrication Process

Static heat transfer and thermal stress analysis for the new generation quasi-monolithic integration technology (NGQMIT) is presented using a three-dimensional finite element simulator. Effects of different factors and parameters such as the gap between the silicon sidewalls and GaAs-chip (Wg), temperature dependent materials properties, isotropic material properties and backside gold metallization thickness or diamond-filled polyimide are described. It is shown that thermal resistances of 11 °C/W and 8.5 °C/W are possible using 200 µm electroplated gold heat-spreader and diamond-filled polyimide on the backside of the active device, respectively. This promises successful realization of the high frequency circuits containing power active devices using the novel QMIT. In comparison to the earlier fabrication process [1-2], eight times improvement in thermal stress is achieved. This extremely improves lifetime of the packaging. The results of thermal stress simulation are compared with white-light interferomety measurement