Characterization of deep impurities in semiconductors by terahertz tunneling ionization

Tunneling ionization in high frequency fields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probability allows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between optical and thermal binding energy, and the basic structure of the defect adiabatic potentials. Compared to static fields, high frequency electric fields in the terahertz-range offer various advantages, as they can be applied contactlessly and homogeneously even to bulk samples using the intense radiation of a high power pulsed far-infrared laser. Furthermore, impurity ionization with terahertz radiation can be detected as photoconductive signal with a very high sensitivity in a wide range of electric field strengths

High-frequency transport in pp-type Si/Si0.87_{0.87}Ge0.13_{0.13} heterostructures studied with surface acoustic waves in the quantum Hall regime

The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient $\Gamma$ and velocity change $\Delta V /V$ were found to oscillate with filling factor. Both the real $\sigma_1$ and imaginary $\sigma_2$ components of the high-frequency conductivity have been determined and compared with quasi-dc magnetoresistance measurements at temperatures down to 33 mK. By analyzing the ratio of $\sigma_1$ to $\sigma_2$, carrier localization can be followed as a function of temperature and magnetic field. At $T$=0.7 K, the variations of $\Gamma$, $\Delta V /V$ and $\sigma_1$ with SAW intensity have been studied and can be explained by heating of the two dimensional hole gas by the SAW electric field. Energy relaxation is found to be dominated by acoustic phonon deformation potential scattering with weak screening.Comment: Accepted for publication in PR

Quantum interference effects in p-Si1−xGex quantum wells

Quantum interference effects, such as weak localization and electronelectron interaction (EEI), have been investigated in magnetic fields up to 11 T for hole gases in a set of Si1−xGex quantum wells with 0.13 < x < 0.95. The temperature dependence of the hole phase relaxation time has been extracted from the magneto-resistance between 35 mK and 10 K. The spin-orbit effects that can be described within the Rashba model were observed in low magnetic fields. A quadratic negative magneto-resistance was observed in strong magnetic fields, due to the EEI effect. The hole-phonon scattering time was determined from hole overheating in a strong magnetic field

Quantum Melting of the Charge Density Wave State in 1T-TiSe2

We report a Raman scattering study of low-temperature, pressure-induced melting of the CDW phase of 1T-TiSe2. Our Raman scattering measurements reveal that the collapse of the CDW state occurs in three stages: (i) For P<5 kbar, the pressure dependence of the CDW amplitude mode energies and intensities are indicative of a ``crystalline'' CDW regime; (ii) for 5 < P < 25 kbar, there is a decrease in the CDW amplitude mode energies and intensities with increasing pressure that suggests a regime in which the CDW softens, and may decouple from the lattice; and (iii) for P>25 kbar, the absence of amplitude modes reveals a melted CDW regime.Comment: 5 pages, 4 figure

Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs/AlAs multiple quantum wells

We present an optical study of beryllium delta-doped GaAs/AlAs multiple quantum well (QW) structures designed for sensing terahertz (THz) radiation. Photoreflectance (PR), surface photovoltage (SPV), and wavelength-modulated differential surface photovoltage (DSPV) spectra were measured in the structures with QW widths ranging from 3 to 20 nm and doping densities from 2×10(10) to 5×10(12) cm(–2) at room temperature. The PR spectra displayed Franz-Keldysh oscillations which enabled an estimation of the electric-field strength of ~20 kV/cm at the sample surface. By analyzing the SPV spectra we have determined that a buried interface rather than the sample surface mainly governs the SPV effect. The DSPV spectra revealed sharp features associated with excitonic interband transitions which energies were found to be in a good agreement with those calculated including the nonparabolicity of the energy bands. The dependence of the exciton linewidth broadening on the well width and the quantum index has shown that an average half monolayer well width fluctuations is mostly predominant broadening mechanism for QWs thinner than 10 nm. The line broadening in lightly doped QWs, thicker than 10 nm, was found to arise from thermal broadening with the contribution from Stark broadening due to random electric fields of the ionized impurities in the structures. We finally consider the possible influence of strong internal electric fields, QW imperfections, and doping level on the operation of THz sensors fabricated using the studied structures. © 2005 American Institute of Physic

Nonmonotonic Temperature-dependent Resistance in Low Density 2D Hole Gases

The low temperature longitudinal resistance-per-square Rxx(T) in ungated GaAs/AlGaAs quantum wells of high peak hole mobility 1.7x10^6 cm^2/Vs is metallic for 2D hole density p as low as 3.8x10^9 cm-2. The electronic contribution to the resistance, R_{el}(T), is a nonmonotonic function of T, exhibiting thermal activation, R_{el}(T) ~ exp{-E_a/kT}, for kT<<E_F and a heretofore unnoted decay R_{el}(T) ~ 1/T for k_T>EF. The form of R_{el}(T) is independent of density, indicating a fundamental relationship between the low and high T scattering mechanisms in the metallic state

Interaction of surface acoustic waves with a two-dimensional electron gas in the presence of spin splitting of the Landau bands

The absorption and variation of the velocity of a surface acoustic wave of frequency $f$= 30 MHz interacting with two-dimensional electrons are investigated in GaAs/AlGaAs heterostructures with an electron density $n=(1.3 - 2.8) \times 10^{11} cm^{-2}$ at $T$=1.5 - 4.2 K in magnetic fields up to 7 T. Characteristic features associated with spin splitting of the Landau level are observed. The effective g factor and the width of the spin-split Landau bands are determined: $g^* \simeq 5$ and $A$=0.6 meV. The greater width of the orbital-split Landau bands (2 meV) relative to the spin-split bands is attributed to different shielding of the random fluctuation potential of charged impurities by 2D electrons. The mechanisms of the nonlinearities manifested in the dependence of the absorption and the velocity increment of the SAW on the SAW power in the presence of spin splitting of the Landau levels are investigated.Comment: Revtex 5 pages + 5 EPS Figures, v.2 - minor corrections in text and pic

Commensurability oscillations in the rf conductivity of unidirectional lateral superlattices: measurement of anisotropic conductivity by coplanar waveguide

We have measured the rf magnetoconductivity of unidirectional lateral superlattices (ULSLs) by detecting the attenuation of microwave through a coplanar waveguide placed on the surface. ULSL samples with the principal axis of the modulation perpendicular (S_perp) and parallel (S_||) to the microwave electric field are examined. For low microwave power, we observe expected anisotropic behavior of the commensurability oscillations (CO), with CO in samples S_perp and S_|| dominated by the diffusion and the collisional contributions, respectively. Amplitude modulation of the Shubnikov-de Haas oscillations is observed to be more prominent in sample S_||. The difference between the two samples is washed out with the increase of the microwave power, letting the diffusion contribution govern the CO in both samples. The failure of the intended directional selectivity in the conductivity measured with high microwave power is interpreted in terms of large-angle electron-phonon scattering.Comment: 8 pages, 5 figure

Spectra of low-energy secondary electrons in the interaction of relativistic electrons with aluminum foil

The integral yields of secondary low-energy electrons (with energies up to 50 eV) in the interaction of primary electrons 10…30 MeV with 50 μm aluminum foil have been studied. It is shown that the proposed method for approximating the spectra of low-energy electron emission in the measured part of the spectrum (E < 4.2 eV) makes it possible to obtain data on the absolute values of the spectra of electrons emitted from the target. It has been established that the spectra of secondary low-energy electrons, depending on the energy of primary electrons, have a maximum in the range of 1.3…1.6 eV, and the FWHM values are in the range of 2.7…3.8 eV.Досліджено інтегральні виходи вторинних низькоенергетичних електронів (з енергією до 50 еВ) при взаємодії первинних електронів 10…30 МеВ з алюмінієвою фольгою товщиною 50 мкм. Показано, що запропонована методика апроксимації спектрів низькоенергетичної емісії електронів у вимірюваній частині спектру (E < 4,2 еВ) дозволяє отримати дані про абсолютні значення спектрів електронів, які вийшли з мішені. Встановлено, що спектри вторинних низькоенергетичних електронів залежно від енергії первинних електронів мають максимум у діапазоні 1,3…1,6 еВ, а значення ширини на половині висоти знаходяться у діапазоні 2,7…3,8 еВ