Transparent yttrium hydride thin films prepared by reactive sputtering

Metal hydrides have earlier been suggested for utilization in solar cells. With this as a motivation we have prepared thin films of yttrium hydride by reactive magnetron sputter deposition. The resulting films are metallic for low partial pressure of hydrogen during the deposition, and black or yellow-transparent for higher partial pressure of hydrogen. Both metallic and semiconducting transparent YHx films have been prepared directly in-situ without the need of capping layers and post-deposition hydrogenation. Optically the films are similar to what is found for YHx films prepared by other techniques, but the crystal structure of the transparent films differ from the well-known YH3 phase, as they have an fcc lattice instead of hcp

Electronic properties of Β-TaON and its surfaces for solar water splitting

This is the final version of the article. Available from Elsevier via the DOI in this record.Recently, oxynitrides materials such as β-TaON has been using as a photoanode material in the field of photocatalysis and is found to be promising due to its suitable band gap and charge carrier mobility. Computational study of the crystalline β-TaON in the form of primitive unit cell, supercell and its N, Ta, and O terminated surfaces are carried out with the help of periodic density functional theory (DFT). Optical and electronic properties of all these different species are simulated, which predict TaON as the best candidate for photocatalytic water splitting contrast to their Ta 2 O 5 and Ta 3 N 5 counterparts. The calculated bandgap, valence band, and conduction band edge positions predict that β-TaON should be an efficient photoanodic material. The valence band is made up of N 2p orbitals with a minor contribution from O 2p, while the conduction band is made up of Ta 5d. Turning to thin films, the valence band maximum; VBM (−6.4 eV vs. vacuum) and the conduction band minimum; CBM (−3.3 eV vs. vacuum) of (010)-O terminated surface are respectively well below and above the redox potentials of water as required for photocatalysis. Charge carriers have smaller effective masses than in the (001)-N terminated film (VBM −5.8 and CBM −3.7 eV vs. vacuum). However, due to wide band gap (3.0 eV) of (010)-O terminated surface, it cannot absorb visible wavelengths. On the other hand, the (001)-N terminated TaON thin film has a smaller band gap in the visible region (2.1 eV) but the bands are not aligned to the redox potential of water. Possibly a mixed phase material would produce an efficient photoanode for solar water splitting, where one phase performs the oxidation and the other reduction.We acknowledge the financial support of Engineering and Physical Science Research Council, UK (EPSRC)under the research grant Nos. EP/P510956/1, EP/P003435/1 and EP/R512801/1. S.K acknowledges the Notur Norwegian supercomputing facilities through project nn4608k and the HyMatSiRen project 272806 by the Research Council of Norway. We also acknowledge Prof. Neil Allan and Dr. Sergio C. Espindola for their help in completing this work

A review on applications of Cu2ZnSnS4 as alternative counter electrodes in dye-sensitized solar cells

This is the final version. Available from AIP Publishing via the DOI in this record. A contribution of counter electrode (CE) emphasis a great impact towards enhancement of a dye-sensitized solar cell's (DSSC) performance and Pt based CE sets a significant benchmark in this field. Owing to cost effective noble metal, less abundance and industrial large scale application purpose, an effective replacement for Pt is highly demanded. There are several approaches to improve the performance of a CE for enhancing the power conversion efficiency with a less costly and facile device. To address this issue, reasonable efforts execute to find out suitable replacement of Pt is becoming a challenge by keeping the same electrochemical properties of Pt in a cheaper and eco-friendlier manner. With this, cheaper element based quaternary chalcogenide, Cu2ZnSnS4 (CZTS) becomes a prominent alternative to Pt and used as a successful CE in DSSC also. This review presents brief discussion about the basic properties of CZTS including its synthesis strategy, physicochemical properties and morphology execution and ultimate application as an alternative Pt free CE for a low cost based enhanced DSSC device. It is therefore, imperative for engineering of CZTS material and optimization of the fabrication method for the improvement of DSSC performance.Research Council of Norwa

Electronic structure, structural and optical properties of thermally evaporated CdTe thin films

Copyright © 2007 Elsevier. NOTICE: this is the author’s version of a work that was accepted for publication in Physica B: Condensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica B: Condensed Matter (2007), DOI: 10.1016/j.physb.2006.04.008Thin films of CdTe were deposited on glass substrates by thermal evaporation. From the XRD measurements itis found that the films are of zinc-blende-type structure. Transmittance, absorption, extinction, and refractive coefficients are measured. Electronic structure, band parameters and optical spectra of CdTe were calculated from ab initio studies within the LDA and LDA+U approximations. It is shown that LDA underestimates the band gap, energy levels of the Cd-4d states, s-d coupling and band dispersion. However, it calculates the spin-orbit coupling correctly. LDA+U did not increase much the band gap value, but it corrected the s-d coupling by shifting the Cd-4d levels towards the experimentally determined location and by splitting the LDA-derived single s peak into two peaks, which originates from admixture of s and d states. It is shown that the sd coupling plays an important role in absorption and reflectivity constants. The calculated optical spectra fairly agree with experimental data. Independent of wave-vector scissors operator is found to be a good first approximation to shift rigidly the band gap of CdTe underestimated by LDA.Research Council of NorwayAcademy of Sciences of UzbekistanUniversity Grants Commission (UGC), Indi

Experimental studies of thorium ions implantation from pulse laser plasma into thin silicon oxide layers

We report the results of experimental studies related to implantation of thorium ions into thin silicon dioxide by pulsed plasma fluxes expansion. Thorium ions were generated by laser ablation from a metal target, and the ionic component of the laser plasma was accelerated in an electric field created by the potential difference (5, 10 and 15 kV) between the ablated target and SiO2/Si(001) sample. Laser ablation system installed inside the vacuum chamber of the electron spectrometer was equipped with YAG:Nd3+ laser having the pulse energy of 100 mJ and time duration of 15 ns in the Q-switched regime. Depth profile of thorium atoms implanted into the 10 nm thick subsurface areas together with their chemical state as well as the band gap of the modified silicon oxide at different conditions of implantation processes were studied by means of X-ray photoelectron spectroscopy (XPS) and Reflected Electron Energy Loss Spectroscopy (REELS) methods. Analysis of chemical composition showed that the modified silicon oxide film contains complex thorium silicates. Depending on local concentration of thorium atoms, the experimentally established band gaps were located in the range of 6.0 - 9.0 eV. Theoretical studies of optical properties of the SiO2 and ThO2 crystalline systems have been performed by ab initio calculations within hybrid functional. Optical properties of the SiO2/ThO2 composite were interpreted on the basis of Bruggeman effective medium approximation. A quantitative assessment of the yield of isomeric nuclei in "hot" laser plasma at the early stages of expansion has been performed. The estimates made with experimental results demonstrated that the laser implantation of thorium ions into the SiO2 matrix can be useful for further research of low-lying isomeric transitions in 229Th isotope with energy of 7.8(0.5) eV

MgyNi1-y(Hx) thin films deposited by magnetron co-sputtering

In this work we have synthesised thin films of MgyNi1-y(Hx) metal and metal hydride with y between 0 and 1. The films are deposited by magnetron co-sputtering of metallic targets of Mg and Ni. Metallic MgyNi1-y films were deposited with pure Ar plasma while MgyNi1-yHx hydride films were deposited reactively with 30% H2 in the Ar plasma. The depositions were done with a fixed substrate carrier, producing films with a spatial gradient in the Mg and Ni composition. The combinatorial method of co-sputtering gives an insight into the phase diagram of MgyNi1-y and MgyNi1-yHx, and allows us to investigate structural, optical and electrical properties of the resulting alloys. Our results show that reactive sputtering gives direct deposition of metal hydride films, with high purity in the case of Mg~2NiH~4. We have observed limited oxidation after several months of exposure to ambient conditions. MgyNi1-y and MgyNi1-yHx films might be applied for optical control in smart windows, optical sensors and as a semiconducting material for photovoltaic solar cells

Photochromic mechanism in oxygen-containing yttrium hydride thin films: An optical perspective

Oxygen-containing yttrium hydride thin films exhibit photochromic behavior: Transparent thin films reversibly switch from a transparent state to a photodarkened state after being illuminated with UV or blue light. From optical spectrophotometry and ellipsometry measurements of the transparent state and photodarkened state, it is concluded that the photochromic effect can be explained by the gradual growth, under illumination, of metallic domains within the initial wide-band-gap semiconducting lattice. This conclusion is supported by Raman measurements