29 research outputs found

    Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide

    Get PDF
    We report on the fabrication of capacitively (AC) coupled n(+)-in-p pixel detectors on magnetic Czochralski silicon substrates. In our devices, we employ a layer of aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) as dielectric and field insulator, instead of the commonly used silicon dioxide (SiO2). As shown in earlier research, Al2O3 thin films exhibit high negative oxide charge, and can thus serve as a substitute for p-stop/p-spray insulation implants between pixels. In addition, they provide far higher capacitance densities than SiO2 due to their high dielectric constant, permitting more efficient capacitive coupling of pixels. Furthermore, metallic titanium nitride (TiN) bias resistors are presented as an alternative to punch-through or poly-Si resistors. Devices obtained by the above mentioned process are characterized by capacitance-voltage and current-voltage measurements, and by 2 MeV proton microprobe. Results show the expected high negative charge of the Al2O3 dielectric, uniform charge collection efficiency over large areas of pixels, and acceptable leakage current densities.Peer reviewe

    Quality assessment of cadmium telluride as a detector material for multispectral medical imaging

    Get PDF
    Cadmiumtelluride (CdTe) is a high-Z material with excellent photon radiation absorption properties, making it a promising material to include in radiation detection technologies. However, the brittleness of CdTe crystals as well as their varying concentration of defects necessitate a thorough quality assessment before the complex detector processing procedure. We present our quality assessment of CdTe as a detector material for multispectralmedical imaging, a research which is conducted as part of the Consortium Project Multispectral Photon-counting for Medical Imaging and Beam characterization (MPMIB). The aim of the project is to develop novel CdTe detectors and obtain spectrum-per-pixel information that make the distinction between different radiation types and tissues possible. To evaluate the defect density inside the crystals - which can deteriorate the detector performance - we employ infrared microscopy (IRM). Posterior data analysis allows us to visualise the defect distributions as 3D defect maps. Additionally, we investigate front and backside differences of the material with current-voltage (IV) measurements to determine the preferred surface for the pixelisation of the crystal, and perform test measurements with the prototypes to provide feedback for further processing. We present the different parts of our quality assessment chain and will close with first experimental results obtained with one of our prototype photon-counting detectors in a small tomographic setup.Peer reviewe

    Characterization of magnetic Czochralski silicon devices with aluminium oxide field insulator : effect of oxygen precursor on electrical properties and radiation hardness

    Get PDF
    Aluminium oxide (Al2O3) has been proposed as an alternative to thermal silicon dioxide (SiO2) as field insulator and surface passivation for silicon detectors, where it could substitute p-stop/p-spray insulation implants between pixels due to its negative oxide charge, and enable capacitive coupling of segments by means of its higher dielectric constant. Al2O3 is commonly grown by atomic layer deposition (ALD), which allows the deposition of thin layers with excellent precision. In this work, we report the electrical characterization of single pad detectors (diodes) and MOS capacitors fabricated on magnetic Czochralski silicon substrates and using Al2O3 as field insulator. Devices are studied by capacitance-voltage, current-voltage, and transient current technique measurements. We evaluate the influence of the oxygen precursors in the ALD process, as well as the effect of gamma irradiation, on the properties of these devices. We observe that leakage currents in diodes before the onset of breakdown are low for all studied ALD processes. Charge collection as measured by transient current technique (TCT) is also independent of the choice of oxygen precursor. The Al2O3 films deposited with O-3 possess a higher negative oxide charge than films deposited by H2O, However, in diodes a higher oxide charge is linked to earlier breakdown, as has been predicted by simulation studies. A combination of H2O and O-3 precursors results in a good compromise between the beneficial properties provided by the respective individual precursors.Peer reviewe

    Beam test performance of a prototype module with Short Strip ASICs for the CMS HL-LHC tracker upgrade

    Get PDF
    The Short Strip ASIC (SSA) is one of the four front-end chips designed for the upgrade of the CMS Outer Tracker for the High Luminosity LHC. Together with the Macro-Pixel ASIC (MPA) it will instrument modules containing a strip and a macro-pixel sensor stacked on top of each other. The SSA provides both full readout of the strip hit information when triggered, and, together with the MPA, correlated clusters called stubs from the two sensors for use by the CMS Level-1 (L1) trigger system. Results from the first prototype module consisting of a sensor and two SSA chips are presented. The prototype module has been characterized at the Fermilab Test Beam Facility using a 120 GeV proton beam

    Test beam performance of a CBC3-based mini-module for the Phase-2 CMS Outer Tracker before and after neutron irradiation

    Get PDF
    The Large Hadron Collider (LHC) at CERN will undergo major upgrades to increase the instantaneous luminosity up to 5–7.5×1034^{34} cm−2^{-2}s−1^{-1}. This High Luminosity upgrade of the LHC (HL-LHC) will deliver a total of 3000–4000 fb-1 of proton-proton collisions at a center-of-mass energy of 13–14 TeV. To cope with these challenging environmental conditions, the strip tracker of the CMS experiment will be upgraded using modules with two closely-spaced silicon sensors to provide information to include tracking in the Level-1 trigger selection. This paper describes the performance, in a test beam experiment, of the first prototype module based on the final version of the CMS Binary Chip front-end ASIC before and after the module was irradiated with neutrons. Results demonstrate that the prototype module satisfies the requirements, providing efficient tracking information, after being irradiated with a total fluence comparable to the one expected through the lifetime of the experiment

    Dual-readout calorimetry: Present status and perspective

    No full text
    Dual-readout calorimetry is now a mature and well-known technology which guarantees excellent electromagnetic and hadronic resolution in the same detector. It has recently being proposed in the framework of IDEA (Innovative Detector for Electron-Positron Accelerators) for both Future Circular Collider (FCC-ee) and Circular Electron-Positron Collider (CEPC). After being extensively tested on prototypes, the dual-readout calorimetry is now moving toward a technology design study in order to be realistically available for an experiment. In this context, a full simulation of the calorimeter has been developed and used to estimate the expected performance of the detector. At the same time, the development of a novel technique for mass production of the detector modules, at an effective cost, is ongoing. As a first step, an electromagnetic-size prototype is under construction for a testbeam data taking originally foreseen in November 2020 and now moved to spring 2021, due to the Covid-19 pandemic spread

    Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide

    No full text
    We report on the fabrication of capacitively (AC) coupled n+-in-p pixel detectors on magnetic Czochralski silicon substrates. In our devices, we employ a layer of aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) as dielectric and field insulator, instead of the commonly used silicon dioxide (SiO2). As shown in earlier research, Al2O3 thin films exhibit high negative oxide charge, and can thus serve as a substitute for p-stop/p-spray insulation implants between pixels. In addition, they provide far higher capacitance densities than SiO2 due to their high dielectric constant, permitting more efficient capacitive coupling of pixels. Furthermore, metallic titanium nitride (TiN) bias resistors are presented as an alternative to punch-through or poly-Si resistors. Devices obtained by the above mentioned process are characterized by capacitance–voltage and current–voltage measurements, and by 2 MeV proton microprobe. Results show the expected high negative charge of the Al2O3 dielectric, uniform chargecollection efficiency over large areas of pixels, and acceptable leakage current densities.Peer reviewe

    Test beam results of the fiber-sampling dual-readout calorimeter

    No full text
    The dual-readout calorimetric technique reconstructs the event-by-event electromagnetic fraction of the hadronic shower through the simultaneous measurement of scintillating (S) and Cherenkov (C) light produced by the shower development. The new generation of prototypes, based on Silicon Photomultipliers (SiPMs) readout, adds unprecedented granularity to the well-known high-energy resolution. A highly granular prototype (10×10×100cm3), designed to fully contain electromagnetic showers, was recently built and qualified on beam. It consists of 9 modules, each made of 320 brass capillaries equipped with both scintillating and clear fibers. All the fibers of the central module are coupled with SiPMs, while the PMTs are used for the others. Furthermore, the new FERS-System, designed by Caen to exploit the CITIROC1A ASICs performances, is at the core of the SiPM readout. The recent test beam at DESY allowed us to qualify the readout system and define a procedure to calibrate the SiPM response from ADC to ph-e in a wide dynamic range. We measured the number of ph-e per GeV for scintillating and Cherenkov light together with the calorimetric performances in the energy range of 1–6 GeV. This work reports the system qualification and the test beam results regarding SiPM calibration
    corecore