Characterization and Design of Millimeter-Wave Complementary Metal-Oxide-Semiconductor Components, and Broadband Low-Noise Amplifiers

This thesis focuses on the characterization and design of millimeter-wave CMOS components and broadband low-noise amplifiers. In the design of millimeter-wave circuits, accurate characterization of on-wafer active and passive components is of great importance. In this thesis, several well-known de-embedding techniques, which are used to characterize on-wafer devices, are reviewed, and their accuracies are investigated. A new de-embedding method for extracting the high frequency characteristics of a device-under-test is presented and applied to test structures manufactured in 28-nm CMOS technology. Excellent agreement is achieved between the simulated and experimental data up to 110 GHz, indicating that the proposed technique is an effective tool in characterization of mm-wave on-wafer components. Furthermore, design of active and passive components, which are used in the millimeter-wave low-noise amplifier circuit, is presented. Layout optimization techniques to improve the high frequency performances of these components are explained in detail. Simulation results are presented to demonstrate the performances of individual components. Finally, several issues concerning millimeter-wave low-noise amplifier design are discussed, such as stability, noise figure and different amplifier topologies. A three-stage full W-band low-noise amplifier achieving a flat gain of 15 dB and 5.5 dB noise figure over a very wideband is designed. Extensive simulation results showing the performance of the amplifier are presented

Wideband mm-Wave CMOS Slow Wave Coupler

In this letter, we have presented a design of on-chip millimeter-wave 3-dB quadrature coupler that utilizes the coupled slow wave coplanar waveguide. The designed CMOS coupler covers the whole E- and W-band and occupies a silicon area of only 0.0115 mm 2 , which is significantly smaller compared to the conventional microstrip-line-based Lange couplers. Measurement of the quadrature coupler shows a -3.5 dB through and a -4.4-dB coupling at 90 GHz. A less than ±1-dB amplitude and a ±4° phase errors from 55 to 110 GHz are recorded.Peer reviewe

Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier

In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date

Identification and molecular characterization of Otobius megnini (Ixodida: Argasidae) seen in humans in Mus province, Turkey

Otobius megnini (Ixodida: Argasidae) is a cosmopolitan soft tick that parasitizes humans as well as domestic and wild animals. The larval and nymph stages of this tick usually feed by parasitizing in the ear canal. The material of this study consists of ticks collected during ear cleaning in approximately 496 people coming with the complaint of ear pain in state hospitals in Bulanik and Malazgirt districts of Mud province, eastern Turkey. As a result of microscopic examination performed on ticks collected from humans, O. megnini tick was determined and molecular identification was made for definitive diagnosis. The 16S rRNA gene fragment of the tick was amplified by PCR. Obtained PCR products were 360 bp. The PCR products were analyzed by sequence analysis and compared with the reference sequences in the BLAST and Genbank. A phylogenetic tree was created with MEGA 7 software using Maximum Likelihood model. As a result, the previously identified Otobius megnini in Turkey, was confirmed using molecular methods for the first time